• Title/Summary/Keyword: optoelectronic materials

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Fully Room Temperature fabricated $TaO_x$ Thin Film for Non-volatile Memory

  • Choi, Sun-Young;Kim, Sang-Sig;Lee, Jeon-Kook
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.28.2-28.2
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    • 2011
  • Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

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Laser-Induced Recrystallization of Perovskite Materials for High-Performance Flexible Light-Emitting Diode (고성능 유연 발광 다이오드 소자 구현을 위한 레이저 기반 페로브스카이트 소재의 재결정화)

  • Jae Chan Heo;Ji Eun Kim;Dong Gyu Lee;Yun Sik Hwang;Yu Mi Woo;Han Eol Lee;Jung Hwan Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.3
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    • pp.286-291
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    • 2023
  • Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.

Advanced crystal growth for the development of new optical materials

  • Fukuda, Tasuguo;Shimamura, Kiyoshi
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.38-74
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    • 1996
  • Recently, the development of new crystal materials for optical applications has become a focus of considerable interest because of the progress of optoelectronic technologies. We have carried out investigations focussing on the development of new optical and electrical materials, by systematic investigations of advanced crystal growth techniques. Here, research and progress in development of new materials and crystal growth techniques is reviewed.

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Synthesis and Characterization of a New Photoconducting Poly(siloxane) Having Pendant Diphenylhydrazone for Photorefractive Applications

  • Lee, Sang-Ho;Jahng, Woong-Sang;Park, Ki-Hong;Kim, Nakjoong;Joo, Won-Jae;Park, Dong-Hoon
    • Macromolecular Research
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    • v.11 no.6
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    • pp.431-436
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    • 2003
  • A new photoconducting polymer, diphenyl hydrazone-substituted polysiloxane, was successfully synthesized by the hydrosilylation method and characterized by FT-IR, $^1$H-NMR, and $^{29}$ Si-NMR spectroscopy. The glass transition temperature (T$_{g}$) of the polysiloxane having pendant diphenyl hydrazone was ca. 62 $^{\circ}C$, which enabled a component of a low-T$_{g}$ photorefractive material to be prepared without the addition of any plasticizers. This polysiloxane, with 1 wt% of $C_{60}$ dopant, showed a high photoconductivity (2.8 ${\times}$ 10$^{-12}$ S/cm at 70 V/${\mu}{\textrm}{m}$) at 633 nm, which is necessary for fast build-up of the space-charge field. A photorefractive composite was prepared by adding a nonlinear optical chromophore, 2-{3-[2-(dibutylamino)-1-ethenyl]-5,5-dimethyl-2-cyclohexenylidene} malononitrile, into the photoconducting polysiloxane together with $C_{60}$ . This composite shows a large orientation birefringence ($\Delta$n = 2.6 ${\times}$ 10$^{-3}$ at 50 V/${\mu}{\textrm}{m}$) and a high diffraction efficiency of 81 % at an electric field of 40 V /${\mu}{\textrm}{m}$.textrm}{m}$.EX>.

High power efficient solar cell using the organic polymer materials (유기고분자 재료를 이용한 우수한 효율의 태양전지)

  • Lee, Junghoon;Park, Jukwang;Chang Seoul
    • Proceedings of the Korean Fiber Society Conference
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    • 2003.04a
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    • pp.356-357
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    • 2003
  • Organic materials are suitable for use in photoelectric conversion devices. Thus, Organic semiconductors are promising materials for photovoltaic devices and other optoelectronic applications such as light emitting diodes(LED). The organic solar cell seems to be the usefulness in comparison with the inorganic solar cell in terms of workability, ease of processing, low cost, flexibility and area expansion. (omitted)

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Accuracy of simulation surgery of Le Fort I osteotomy using optoelectronic tracking navigation system (광학추적항법장치를 이용한 르포씨 제1형 골절단 가상 수술의 정확성에 대한 연구)

  • Bu, Yeon-Ji;Kim, Soung-Min;Kim, Ji-Youn;Park, Jung-Min;Myoung, Hoon;Lee, Jong-Ho;Kim, Myung-Jin
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.37 no.2
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    • pp.114-121
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    • 2011
  • Introduction: The aim of this study was to demonstrate that the simulation surgery on rapid prototype (RP) model, which is based on the 3-dimensional computed tomography (3D CT) data taken before surgery, has the same accuracy as traditional orthograthic surgery with an intermediate splint, using an optoelectronic tracking navigation system. Materials and Methods: Simulation surgery with the same treatment plan as the Le Fort I osteotomy on the patient was done on a RP model based on the 3D CT data of 12 patients who had undergone a Le Fort I osteotomy in the department of oral and maxillofacial surgery, Seoul National University Dental Hospital. The 12 distances between 4 points on the skull, such as both infraorbital foramen and both supraorbital foramen, and 3 points on maxilla, such as the contact point of both maxillary central incisors and mesiobuccal cuspal tip of both maxillary first molars, were tracked using an optoelectronic tracking navigation system. The distances before surgery were compared to evaluate the accuracy of the RP model and the distance changes of 3D CT image after surgery were compared with those of the RP model after simulation surgery. Results: A paired t-test revealed a significant difference between the distances in the 3D CT image and RP model before surgery.(P<0.0001) On the other hand, Pearson's correlation coefficient, 0.995, revealed a significant positive correlation between the distances.(P<0.0001) There was a significant difference between the change in the distance of the 3D CT image and RP model in before and after surgery.(P<0.05) The Pearson's correlation coefficient was 0.13844, indicating positive correlation.(P<0.1) Conclusion: Theses results suggest that the simulation surgery of a Le Fort I osteotomy using an optoelectronic tracking navigation system I s relatively accurate in comparing the pre-, and post-operative 3D CT data. Furthermore, the application of an optoelectronic tracking navigation system may be a predictable and efficient method in Le Fort I orthognathic surgery.

Synthesis and Photovoltaic Properties of Alternating Conjugated Polymers Derived from Thiophene-Benzothiadiazole Block and Fluorene/Indenofluorene Units

  • Li, Jianfeng;Tong, Junfeng;Zhang, Peng;Yang, Chunyan;Chen, Dejia;Zhu, Yuancheng;Xia, Yangjun;Fan, Duowang
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.505-512
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    • 2014
  • A new donor-accepter-donor-accepter-donor (D-A-D-A-D) type 2,1,3-benzothiadiazole-thiophene-based acceptor unit 2,5-di(4-(5-bromo-4-octylthiophen-2-yl)-2,1,3-benzothiadiazol-7-yl)thiophene ($DTBTTBr_2$) was synthesized. Copolymerized with fluorene and indeno[1,2-b]fluorene electron-rich moieties, two alternating narrow band gap (NBG) copolymers PF-DTBTT and PIF-DTBTT were prepared. And two copolymers exhibit broad and strong absorption in the range of 300-700 nm with optical band gap of about 1.75 eV. The highest occupied molecular orbital (HOMO) energy levels vary between -5.43 and -5.52 eV and the lowest unoccupied molecular orbital (LUMO) energy levels range from -3.64 to -3.77 eV. Potential applications of the copolymers as electron donor material and $PC_{71}BM$ ([6,6]-phenyl-$C_{71}$ butyric acid methyl ester) as electron acceptors were investigated for photovoltaic solar cells (PSCs). Photovoltaic performances based on the blend of PF-DTBTT/$PC_{71}BM$ (w:w; 1:2) and PIF-DTBTT/$PC_{71}BM$ (w:w; 1:2) with devices configuration as ITO/PEDOT: PSS/blend/Ca/Al, show an incident photon-to-current conversion efficiency (IPCE) of 2.34% and 2.56% with the open circuit voltage ($V_{oc}$) of 0.87 V and 0.90 V, short circuit current density ($J_{sc}$) of $6.02mA/cm^2$ and $6.12mA/cm^2$ under an AM1.5 simulator ($100mA/cm^2$). The photocurrent responses exhibit the onset wavelength extending up to 720 nm. These results indicate that the resulted narrow band gap copolymers are viable electron donor materials for polymer solar cells.