• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.776-780
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• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1306-1309
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• 2005

Highly efficient and bright organic light-emitting diodes (OLEDs) have been realized using the thin alkali compound films (TACFs) at the interface between an emitting layer and an electron transporting layer with conventional organic layers. By comparing the performance of the device as a function of position with the TACFs, we propose the optimal position of the TACFs in the tris-(8-hydroxyquinoline) aluminum (Alq3). A device with the ACFs showed high luminance of over 12 500 cd/m2, luminance efficiency of more than 12 cd/A, and power efficiency of more 4.5 lm/W, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.78-80
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.407-407
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• 2008

무기EL 디스플레이는 고체재료에 전계를 가했을 때 발광하는 현상을 이용한소자로서, 급속도로 발전을 거듭하고 있으나, 유전체층에 강한전계를 가하여 발광하여야 하므로 낮은 Breakdown voltage와 효율의 한계로 인하여 휘도가 낮고 풀 컬러화 디스플레이 등 의 응용에는 적용되고 있지 못하는 실정이다. 본 연구에서는 강유전체 Perovskite 구조를 가지는 ABO3 물질 중 PMN(Lead Magnesium niobate) 과 PZT (Lead Zirconate titanate) 후막을 제조하여 Inorganic EL(Electro Luminance)에 적용하고 소자의 광전특성을 평가하였다. 소자에 사용된 기판은 고온소성에 알맞은 알루미나(Al2O3)기판을 채택 하였으며, 그 위 하부전극으로는 고온소성에 따른 화학적 안정성이 우수한 Au전극을 Screen Printing 하였다. 제조 되어진 PMN후막 페이스트는 PMN(Pb(Mg1/2 Nb2/3)O3) + Glass Frit(Pb-Zn-B) + BaTiO3(99.99%) 로 합성되었으며 하부전극위에 인쇄하였다. 그 다음 PZT sol-gel을 Spin coating으로 도포 하였다. 형광체로 ZnS:Cu.Cl 을 Screen Printing을로 형성하였으며, 평탄화를 위하여 유기물 충을 Screen Printing 공정으로 성막 하였다. 상부전극으로는 DC sputter로 ITO를 증착하여 EL소자 완성 후 Spectro - Chroma meter로 소자특성을 측정하였다. 평탄화를 통한 유기물층에 변화되는 Capacitance를 Oscilloscope로 전압 전류 pulse의 변화에 따른 opto-electronic 특성을 평가하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1294-1296
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• 2005

We have fabricated white organic light emitting diodes. To obtain balanced white emission and improve the efficiency of devices, thin electron blocking layer (TEBL) was inserted between the emitting layers. We showed that the effective injection of electrons through the optimization of TEBL (a - NPD) embodied the balance of spectra and had a possibility of getting white emission. In a device with 0.3 nm a-NPD, it had a maximum power efficiency of 3.80 lm/w at 250 $cd/m^2$, a luminance of 1200 $cd/m^2$ at 100 $mA/cm^2$ , and the CIE coordinates were (0.353, 0.357).

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.7-10
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• 2007

In an effort to reduce weaknesses of existing laser displacement sensor-based system, a sensing device for distance and balance of mask-substrate gap using touch-type displacement sensor was suggested. The device suggested in this study is expected to solve the problems of prices and reflections, by means of a touch-type sensor. LCD exposure equipment stage system including suggested sensing device was realized to assess the characteristics of sensing the balance and gap between mask and substrate. It was verified that a touch-type displacement sensor-based device to adjust the balance and distance of mask-substrate gap suggested in this study can be applicable to LCD expose equipment in practice.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.525-530
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• 2012

We present the results of a study of the polarizing photovoltaic (PV) effects in an aligned polymer bulk heterojuction PV layer. The fairly uniform in-plane uniaxial alignment of the PV layer with a macroscopic axial orientational order parameter of 0.40 was achieved by means of a simple rubbing technique. Moreover, reflective polarizing PSCs having the aligned PV layers were applied to power-generating reflective type liquid crystal displays (LCDs), which exhibited a maximum contrast ratio of 1.7. These results form a promising foundation for various energy harvesting polarization dependent opto-electrical LCD device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1023-1027
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• 2009

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.63-68
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• 2004

Since rotor position information is necessary to drive the SRM, absolute-encoder, resolver and incremental-encoder is used to detect a poor position. But, it is not desirable to use a high priced encoder and high efficient microprocessor under the condition of the simple driving system when precision control is not demanded. In this paper, Only using the reflective type 2 photosensors replace the conventional opto interrupter and slotted disk, which not only remove a slotted disk section but drive 3-phase 6/4 SRM bidirectionally. Moreover, as control circuit only is composed of common analog device economy is maximized.