• Title/Summary/Keyword: optical uniformity

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Deposition of SiO2 Thin Film for the Core of Planar Light-Wave-Guide by Transformer Coupled Plasma Chemical-Vapor-Deposition (TCP-CVD 장비를 활용한 광도파로용 Core-SiO2 증착)

  • Kim, Chang-Jo;Shin, Paik-Kyun
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.230-235
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    • 2010
  • In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

Fabrication of Silicone Resin TIR Linear Lens and Development of 365 nm Wavelength UV LED Light Source (실리콘 수지 TIR 선형 렌즈 제작 및 365 nm 파장대역 UV LED 조사기 광원 개발)

  • Sung, Jun Ho;Yu, Soon Jae;Anil, Kawan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.6
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    • pp.433-436
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    • 2018
  • A total internal reflection (TIR) linear lens of size $190(W){\times}5(D){\times}2.1(H)mm^3$ has a directivity of $25^{\circ}$ and was made of a polydimethysiloxane (PDMS) silicone resin with a refractive index of 1.4 and a transmittance of 93% at 365 nm UV wavelength. A light source with a size of $190{\times}25.5mm^2$ was fabricated by installing a TIR linear lens on a chip on board (COB) type LED module mounted with a $1.1{\times}1.1mm^2$ size UV LED. The optical characteristics of the light source showed a maximum irradiation density of $3,840mW/cm^2$ at a working distance of 5 mm and a high uniformity of 91.6% over a $150{\times}25mm^2$ irradiation area. The thermal characteristics of the light source were measured at a supply current of 500 mA. The saturation temperature was reached after 30 min of operation, and measured to be $95^{\circ}C$.

Development of High Efficiency and High Power LED Package for Applying Silicone-Reflector (실리콘 리플렉터를 적용한 고효율 고출력 LED 패키지 개발)

  • Jeong, Hee-Suk;Lee, Young-Sik;Lee, Jung-Geun;Kang, Han-Lim;Hwang, Myung-Keun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.9
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    • pp.1-5
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    • 2013
  • We developed high-efficient 6W-LED package with simple structure by applying Heat Slug and silicone-reflector. LED package was manufactured in $8.5{\times}8.5mm$ sized multi-chip structure having thickness of $500{\mu}m$ achieved by bonding silicon-reflector with prepreg on top of the plate after implementing the reflector placed on copper substrate Half Etching by thickness of $200{\mu}m$. The luminous flux, luminous efficacy, correlated color temperature, color rendering index and thermal resistance of developed LED was evaluated, and it verified the application of products by applying it to 120W-LED road luminaires through simulation. The luminous efficacy of LED package reached over 130lm/W, and it is possible to be manufactured into 120W-LED road luminaires using 18 packages. In addition, the simulation results showed average of horizontal illuminance and overall illuminance uniformity that is suitable for three-lane road.

Growth of ZnO thin films by MOCVD using the buffer layers grown at high temperature (고온 버퍼층을 이용한 ZnO 박막의 MOCVD 성장)

  • Kim, Dong-Chan;Kong, Bo-Hyun;Cho, Hyung-Koun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.108-109
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    • 2006
  • ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

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Comparison of laser electrodes for efficient uniform disharge (효율적 균일 방전을 위한 레이저 전극 형상 비교)

  • Kim, Dong-Hwan;Chu, Hong;Choi, Sang-Sam
    • Korean Journal of Optics and Photonics
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    • v.3 no.2
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    • pp.133-136
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    • 1992
  • Calculation and comparison of the design parameter between Chang and Ernst profile that can be used for the uniform discharge in excimer or TEA $Co_2$ laser are carried out. This result can be used to establish the initial $\kappa$-value in the design of electron. Also, calculation shows that Ernst profile is 2-3 times superior to Chang profile in uniformity of electric field with respect to the same k-value ($0.001\le\kappa\le0.25$).

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Flow Behavior of Thin Polymer Film in Spinning Coating Process of Blu-ray Disc Cover layer (블루레이 디스크의 커버레이어 스핀코팅 시 폴리머 거동에 관한 연구)

  • Ban J. H.;Shin H. G.;Kim B. H.;Kim H. Y.;Lee H. G.;Son S. G.;Shin J. K.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.05a
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    • pp.113-116
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    • 2005
  • In this paper, a computational and experimental analysis about the flow behavior of thin polymer film in the spin coating process for stable cover layer coating of a blu-ray disc is described. The blu-ray disc, a next-generation optical disc format over 25GB, consists of a 1.1mm thick substrate and a 0.1mm tick cover layer. Generally, cover layer on the blu-ray disc is made by the polymer spin coating process. However, it is hard to secure sufficient coating uniformity around the rim on the cover layer. In order to get the uniform thickness deviation and to minimize the bead around the rim, the edge of the disc substrate can be modified into various shapes around the rim on the disc and analyzed with various parameters, such as surface tension, viscosity, and rotation speed, etc. The optimal shape of the rim was tried to get by 3 dimensional computer simulation of the polymer expulsion process.

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Photoluminescence Characteristics of InAs Quantum Dots Grown on AlAs Epitaxial Layer (AlAs 에피층 위에 성장된 InAs 양자점의 Photoluminescence 특성연구)

  • Kim, Ki-Hong;Sim, Jun-Hyoung;Bae, In-Ho
    • Korean Journal of Materials Research
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    • v.19 no.7
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    • pp.356-361
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    • 2009
  • The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

Injection/compression molding for micro pattern (미세패턴 성형을 위한 사출 압축 성형 공정 기술)

  • Yoo Y.E.;Kim T.H.;Kim C.W.;Je T.J.;Choi D.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.100-104
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    • 2005
  • The injection molding is very effective process for various plastic products due to its high productivity. It is also good fur precise products like optical parts. Various thermoplastic materials are also available with this injection molding process. In recent, however, as the overall size of the product increases and micro or nano scale of patterns are applied to the products, we now have some problems such as low fidelity of the replication of the pattern, high molding pressure, or warpage from the in-mold stress. Injection/compression molding is studied to overcome those problems in molding large thin plate with micro pattern array on its surface. An injection compression mold is designed to 3 pieces mold for side gate. We install 4 pressure transducers and 9 thermocouples to measure the melt pressure and surface temperature in the cavity during the process. As a result, the maximum molding pressure for injection compression molding is reduced to 1/3 compared to injection molding and the uniformity of the pressure in the cavity is enhanced by about 15%.

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Reducing Efficiency Droop in (In,Ga)N/GaN Light-emitting Diodes by Improving Current Spreading with Electron-blocking Layers of the Same Size as the n-pad

  • Pham, Quoc-Hung;Chen, Jyh-Chen;Nguyen, Huy-Bich
    • Current Optics and Photonics
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    • v.4 no.4
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    • pp.380-390
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    • 2020
  • In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

300-W-class Side-pumped Solar Laser

  • Qi, Hongfei;Lan, Lanling;Liu, Yan;Xiang, Pengfei;Tang, Yulong
    • Current Optics and Photonics
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    • v.6 no.6
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    • pp.627-633
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    • 2022
  • To realize uniform side pumping of solar lasers and improve their output power, a solar concentrating system based on off-axis parabolic mirrors is proposed. Four identical off-axis parabolic mirrors with focal length of 1,000 mm are toroidally arranged as the primary concentrator. Four two-dimensional compound parabolic concentrators (2D-CPCs) are designed as a secondary concentrator to further compress the focused spot induced by the parabolic mirrors, and the focused light is then homogenized by four rectangular diffusers and provides uniform pumping for a laser-crystal rod to achieve solar laser emission. Simulation results show that the solar power received by the laser rod, uniformity of the light spot, and output power of the solar laser are 7,872.7 W, 98%, and 351.8 W respectively. This uniform pumping configuration and concentrator design thus provide a new means for developing high-power side-pumped solid-state solar lasers.