• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.268-272
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• 2006

We have demonstrated the selection and the amplification of the components of an optical frequency comb using femto-second laser injection-locking technique. We used a mode-locked Ti:sapphire laser as a master laser and a single-mode diode laser as a slave laser. After passing through the interference filter with the center wavelength 794.7 nm and the transmittance bandwidth 1.5 nm, the optical frequency comb by mode-locked femto-second laser was injected into the slave laser. The injection-locked slave laser had $3{\sim}4$ multi-mode with the mode spacing 100.5 MHz, whichcorrespond to the repetition rate of a mode-locked Ti:sapphire laser. The power of the modes selected by femto-second laser injection-locking technique was amplified to several thousands times

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.1-1
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.116-117
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• 2002

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.76-77
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• 2002

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.9
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• pp.3435-3440
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• 2010

Unlike the electric method capable of checking only product defect, the real time optical metrology is suggested for measuring and visualizing vibration with respect to position of surface acoustic wave in RF device. The measuring limits and conditions for surface acoustic wave is given, and the interference and diffraction due to RF signal are analyzed by optical interpretation. A single mode laser and a 105MHz-center-frequency repeater filter were employed for experiments and theoretical analysis. In this paper, the optical metrology providing visual energy distribution and real time inspection for surface acoustic wave is proposed for development of high quality multi-service and multi-frequency RF module.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.194-195
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.19-20
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• 2006

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• Current Optics and Photonics
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• v.7 no.2
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• pp.207-212
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• 2023

In this paper, we introduce our system for manufacturing a Rb vapor cell and describe its fabrication process in a sequence of removing impurities, cold trapping, and sealing off. Saturated absorption spectroscopy was performed to verify the quality of our cell by comparing it to that of a commercial one. By using the lab-fabricated Rb vapor cell, we observed electromagnetically induced transparency in a ladder-type system corresponding to the 5S_1/2-5P_3/2-28D_5/2 transition of the ⁸⁵Rb atom. A highly excited Rydberg atomic system was prepared using two counter-propagating external cavity diode lasers with wavelengths of 780 nm and 480 nm. We also observed the Autler-Townes splitting signal while a radio-frequency source around 100 GHz incidents into the Rydberg atomic medium.

• International Journal of Precision Engineering and Manufacturing
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• v.1 no.1
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• pp.49-55
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• 2000

The semiconductor industry relies on digital optical imaging for the overlay metrology of integrated circuit patterns. One critical performance demand in the particular application of digital imaging is placed on the edge resolution that is defined as the smallest detectable displacement of an edge from its image acquired in digital from. As the critical feature size of integrated circuit patterns reaches below 0.35 micrometers, the edge resolution is required to be less than 0.01 micrometers. This requirement is so stringent that fundamental behaviors of digital optical imaging need to be explored especially for the precision coordinate metrology. Our investigation reveals that the edge resolution shows quasi-random characteristics, not being simply deduced from relevant opto-electronic system parameters. Hence, a stochastic upper bound analysis is made to come up with the worst edge resolution that can statistically well predict actual indeterminate edge resolutions obtained with high magnification microscope objectives.