• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.68-71
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• 1996

In the study, the thermal and optical properties of SiO$_2$-PbO-K$_2$O-Al$_2$O$_3$ g1asses were investigated. According to Ga$_2$O$_3$ addictions, the properties of bulk glass, transition temperature and softening temperature were increased, whereas thermal expansion coefficient was decreased; In the optical properties, refractive index was increased, and IR cut-off wavelength was enlarged from 4.64$\mu\textrm{m}$ to 5.22$\mu\textrm{m}$. But, the optical loss of fiber was decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.611-617
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• 2001

The non-polar optical phonon scattering in the valence band depends on the masses, ratios, and types of mixtures of constituent atoms. Therefore, the random distribution of atoms in alloy semiconductors should be considered in the analysis of scattering mechanisms. For this purpose, the force equations of n atoms in a unit cell are expressed in a n x n matrix form to obtain the angular frequencies due to the acoustic and non-polar optical phonons. And, n is then assumed to be infinity. When this work is compared with other results published elsewhere, it is concluded that the independence of atomic displacement or amplitude of oscillation as ell as the infinite number of atoms in a unit cell must be taken into account for the random distribution of atoms in alloy semiconductors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.62-66
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• 2002

The preliminary results on the application of optical fiber sensor(OFS) for locations of ultrasonic signals in underwater are presented and analyzed. The OFS utilizing the principle of Sagnac interferometry was designed and the hollowed cylindrical mandrel wound by single mode optical fiber was used as sensing component. The ultrasonic signal source was simulated by the PZT actuator operated with function generator. It has been shown that the OFS could detect the signals less affected by ultrasonic path comparing to conventional acousto-electric sensor and accurate location of ultrasonic signal could be carried out using two OFSs.

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.531-536
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• 2015

This paper presents a new graphical method for selecting a pair of optical glass and housing materials to simultaneously achromatize and athermalize a multilens system composed of many elements. To take into account the lens spacing and housing, we quantify the lens power, chromatic power, and thermal power by weighting the ratio of the paraxial ray height at each lens to them. In addition, we introduce the equivalent single lens and the expanded athermal glass map including a housing material. Even though a lens system is composed of many elements, we can simply identify a pair of glass and housing materials that satisfies the athermal and achromatic conditions. Applying this method to design a black box camera lens equipped with a 1/4-inch image sensor having a pixel width of $2{\mu}m$, the chromatic and thermal defocusings are reduced to less than the depth of focus, over the specified ranges in temperature and frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.455-456
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• 2008

In this study, we report that an electrical properties of OLEDs was investigated by the surface etching method of ITO Layer. The electrical properties of OLEDs was measured by IVL and optical properties by EL spectrum. The fundamental structure of OLEDs was ITO anode/TPD(400$\breve{A}$)/$Alq_3(600\breve{A})$/LiF(5$\breve{A}$)/Al(1200$\breve{A}$) cathode. The threshold voltage was low value according to the low resistance of surface. The luminance was increased by decreased surface resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.282-285
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• 1999

Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$. Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.838-841
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• 2003

This paper shows results on the application of optical fiber sensors(OFS) for locations of ultrasonic signals in silicon insulating oil. The OFS system based on the principle of Sagnac interferometry has been designed and established for this work. The hollowed cylindrical mandrel wound by single mode optical fiber was used as a sensing component and ultrasonic signals which simulate the partial discharge In the oil have been generated by PZT actuator operated with function generator. The experimental results shows that the OFS has a excellent performance for the PD location with resolutions less than 1$^{\circ}C$ error range in the miniature insulating oil tank.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.