• Applied Science and Convergence Technology
• /
• v.25 no.1
• /
• pp.1-6
• /
• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.2
• /
• pp.110.2-110.2
• /
• 2011

Nishikida et al. (2006) presented the first far-ultraviolet (FUV) em${\lambda}$ission-line images of the Vela supernova remnant (SNR) obtained with FIMS/SPEAR instrument. Those include C III ${\lambda}$977, O VI ${\lambda}{\lambda}$1032, 1038, Si IV+O IV] ${\lambda}{\lambda}$1393, 1403 (un-resolved), C IV ${\lambda}{\lambda}$1548, 1551 emission-line images. As a following work, we re-constructed these emission-line images using the new-version processed FIMS/SPEAR data. Additionally, we made N IV] ${\lambda}$1486, He II ${\lambda}$1640.5, O III] ${\lambda}{\lambda}$1661, 1666 emission-line images. The new-version images cover the whole region of the Vela SNR and show more resolved features than the old-version. We compare these FUV emission-line images with other wavelength (X-ray, optical, etc.) images obtained in previous studies.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.133-134
• /
• 2000

Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.43-46
• /
• 2007

Though bottom emission AM-OLED has advantages in respect of mass production, the bottom emission type is underrated due to its low aperture ratio and low color gamut, compared with top emission type. In this paper, we demonstrate that the color gamut up to 89 % can be simply achieved by depositing dielectric multilayers, whose thicknesses are determined using an optical simulation program, prior to formation of Si layer.

• ETRI Journal
• /
• v.28 no.4
• /
• pp.513-516
• /
• 2006

Experimental demonstration of bipolar spectral encoding code-division multiple-access with modified pseudorandom noise codes is presented. Bipolar spectral encoding is achieved with an erbium-doped fiber amplifier amplified spontaneous emission source and arrayed waveguide gratings. The bit-error rate performance of 1.25 Gbps signal transmission over 80 km single mode fiber is measured in a multiple-user environment.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.1-1
• /
• 2001

Microlasers grown on a chip without any distributed Brags reflectors to provide the feedback are potentially useful for integrated optics, particularly if the laser emission in the plane is unidirectional and this direction can be switched. Microfilters performing as add/drop devices and bandpass units are now considered the most needed optical element for the DWDM field. The talk will concentrate on our research effort in GaN microlasers with non-circular shapes and in dielectric microfilters with oval and square shapes. (omitted)

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.1
• /
• pp.39-46
• /
• 2005

We fabricate and analyze fully depleted optical thyristors (DOTs) using quarter wavelength reflector stacks (QWRS). QWRS are employed as bottom mirrors to enhance the emission efficiency as well as the optical sensitivity. In order to analyze their switching characteristics, S-shape nonlinear current-voltage curves are simulated and the reverse full-depletion voltages (Vneg's) of DOTs are obtained as function of semiconductor parameters by using a finite difference method (FDM). The fabricated DOTs show sufficient nonlinear s-shape I-V characteristics and switching voltage changes of these devices with and without bottom mirrors show 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirrors shows about 20％ and 46% enhancement in switching voltage change and spontaneous emission efficiency, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.1
• /
• pp.12-17
• /
• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.523-523
• /
• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.233-233
• /
• 2010

CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.