• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.381-386
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• 2006

In dielectric waveguide analysis and synthesis, we often encounter an awkward task of solving the eigenvalue equation to find the value of propagation constant. Since the dispersion equation is an irrational equation, we cannot solve it directly. Taking advantage of approximated calculation, we attempt here to solve this irrational dispersion equation. A new type of eigenvalue equation, in which guide index is expressed as a function of frequency, has been developed. In practical optical waveguide designing and in calculating the propagation mode, this equation will be used more conveniently than the previous one. To expedite the design of the waveguide, we then solve the eigenvalue equation of a slab waveguide, which is sufficiently accurate for practical purpose.

• Current Optics and Photonics
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• v.3 no.6
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• pp.566-570
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• 2019

To investigate dependence of the sensitivity of THz metamaterials on the position of target dielectric materials, we functionalized the metamaterial gap with an adhesive polymer. A shift in resonance frequency occurs when polystyrene microbeads are deposited in the gap of the metamaterial's metal resonator pattern, while little change is observed when they are deposited on other areas of the metasurface. A two-dimensional mapping of the sensitivity, with a grid size of 1 ㎛, is obtained from a finite-difference time-domain simulation: The frequency shift is displayed as a function of the position of a target dielectric cube. The resulting sensitivity distribution clearly reveals the crucial role of the gap in sensing with metamaterials, which is consistent with the electric field distribution near the gap.

• Journal of Integrative Natural Science
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• v.2 no.2
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• pp.59-64
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• 2009

금속 나노 입자의 표면편재 플라즈몬 공명 주파수에 영향을 미치는 금속의 유전율은 조사된 빛의 파장 값에 의존하는 함수로 표현된다. 본 연구에서는 유전율의 실수부와 허수부 값을 체계적으로 변화시킬 수 있는 가상의 금속 나노 막대를 대상으로, 이산 쌍극자 근사(Discrete dipole approximation)를 사용하여, 광학적 성질을 계산하였다. 계산 결과, 유전율 함수의 실수부가 선형적으로 감소하는 경우에는 금속의 크기가 커짐에 따라 최대 소광이 나타나는 피크가 긴 파장영역으로 이동했고, 반대로 실수부가 선형적으로 증가하는 경우에는 최대 소광이 나타나는 피크가 짧은 파장영역으로 이동함을 알 수 있었다. 허수부 값을 증가시켰을 경우에는, 실수부에 관계없이 그 값이 증가함에 따라 피크의 세기가 감쇠하는 경향을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.47-49
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• 1995

We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.111-115
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• 1997

Vertical-cavity surface-emitting laser(VCSEL)s operating at 1.3-micron wavelength for optical communication are fabricated by using Si/SiO$_2$dielectric quater-wave pairs on both sides of the InGaAsP(${\lambda}_g$=1.3 ${\mu}{\textrm}{m}$) gain material. VCSELs are optically pumped with a Nd-YAG laser in a pulsed mode and lasing around 1.3 microns is observed. Lasing characteristics such as threshold pump intensity as a function of mirror-reflectivity, polarization, and threshold pump density with pump spot size are investigated.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.12-15
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• 2002

The physical properties, including magneto-optical and transport ones, of Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states were investigated. The dependence of the temperature coefficient of resistivity on temperature shows kinks at the structural and ferro-para magnetic transitions. Electron-magnon and electron-phonon scattering are analyzed to be the dominant scattering mechanisms of the Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states, respectively. The experimental real parts of the off-diagonal components of the dielectric function present two sharp peaks, one at 1.9 eV and the other at 3.2 eV, and a broad shoulder at 3.5 eV, all are identified by the band-structure calculations. These peak positions are coincident with those in the corresponding optical-conductivity spectrum, which is thought to originate from the single-spin state in Ni$_2$MnG$_2$ alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.141-141
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• 2012

The electronic and optical properties of Indium Zinc Tin Oxide (IZTO) thin films using gas environment were investigated by X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). REELS spectra revealed that the band gaps of IZTO thin films are 3.26, 3.07, and 3.46 eV for water mixed with oxygen, argon mixed with oxygen, and air environments, respectively. The measured band gaps by REELS are consistent with the optical band gaps obtained by UV-Spectrometer. The optical properties represented by the dielectric function $\mathfrak{m}$, the refractive index n, the extinction coefficient k, and the transmission coefficient T of the IZTO thin films with different gas environments were determined from a quantitative analysis of REELS spectra. The calculated transmission from quantitative analysis of REELS spectra shows good agreement with transmission measured by UV-spectrometer. The transmission values of 89% and low electrical resistivity of $3.55{\times}10^{-3}{\Omega}{\cdot}cm$ have been achieved for argon mixed with oxygen which indicates that the gas enviroment plays an important role in improving the electronic and optical properties of films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Korean Journal of Metals and Materials
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• v.50 no.4
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• pp.331-337
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• 2012

Electrical properties as a function of composition in silicon nitride ($SiN_x$) films grown at low temperatures ($<200^{\circ}C$) were studied for applications to photonic devices and thin film transistors. Both silicon-rich and nitrogen-rich compositions were successfully produced in final films by controlling the source gas mixing ratio, $R=[(N_2\;or\;NH_3)/SiH_4]$, and the RF plasma power. Depending on the film composition, the dielectric and optical properties of $SiN_x$ films varied substantially. Both the resistivity and breakdown field strength showed the maximum value at the stoichiometric composition (N/Si = 1.33), and degraded as the composition deviated to either side. The electrical properties degraded more rapidly when the composition shifted toward the silicon-rich side than toward the nitrogen-rich side. The composition shift from the silicon-rich side to the nitrogen-rich side accompanied the shift in the photoluminescence characteristic peak to a shorter wavelength, indicating an increase in the band gap. As long as the film composition is close to the stoichiometry, the breakdown field strength and the bulk resistivity showed adequate values for use as a gate dielectric layer down to $150^{\circ}C$ of the process temperature.