• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.86-87
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.242-243
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• 2003

A CGH is a hologram generated by computer. It is widely applied to wavefront manipulation, synthesis, optical information processing and interferometer. Some methods have been used to determine the optimum phase pattern to achieve high diffraction efficiency and uniform intensity such as DBS (Direct Binary Search), SA (Simulated Annealing), GA(Genetic Algorithm). These methods require long computation time to generate a hologram. (omitted)

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.2
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• pp.122-128
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• 1987

In this paper, the photo-induced of a-$Sc_{75} Ge_{25}$thin films has been investigated as a function of annealing, exposure and obliqueness. The photo-induced effect consists of photo-thermal and photo-optical effect, which the photo-optical effect increases with increasing obliqueness. As the results, these photo-induced effects are related to the creation of atomic and electronic metastable state due to the surface defects.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.140-140
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• 1999

Ti/Ni multilayered films (MLF) are ideal for neutron optics particularly in neutron guides and focusing devices. This system also possesses the tendency of amorphization through a solid-state reaction (SSR). This behaviors are closely related to the electronic structures and both magneto-optical (MO) and optical properties of metals depend strongly on their electron energy structures. Mutual inter-diffusion of the Tin and Ni atoms in the MLF caused by a low temperature annealing should decrease the thickness of pure Ni, as well as change the chemical and atomic order in the reactive zone. The application of the MO spectroscopy to the study of SSR in the MLF allows us to obtain an additional information on the changes in the atomic and chemical orders in the interface region. The optical one has no restriction on the magnetic state of the constituent sublayers. Therefore, the changes in magnetic, MO and optical properties of the Ti/Ni MLF due to SSR can be expected. To the best of our knowledge, the MO and optical spectroscopies were not used for this purpose. SSR has been studied in the series of the Ti/Ni MLFs with bilayer periods of 0.65-22.2nm and constant ratio of the Ti to Ni sublayers thickness by using MO and optical spectroscopies as well as an x-ray diffraction. The experimental MO and optical spectra are compared with the computer-simulated spectra, assuming various interface models. The relative changes in the x-ray diffraction spectra and MO properties of the Ti/Ni MLF caused by annealing are bigger for the multilayers with "thick" sublayers, or the SSR with the formation of amorphous alloy takes place mainly in the Ti/Ni multilayers with "thick" sublayers, while in the nominal threshold thickness of the Ni-sublayer for the observation of the equatorial Kerr effect in the as-deposited and annealed Ti/Ni MLFs of about 3.0 and 4.5nm thick is explained by the formation of amorphous alloy during the deposition or the formation of the nonmagnetic alloyed regions between pure components as a result of the SSR. For the case of Ti/Ni MLF the MO approach is more sensitive for the determination of the thickness of the reacted zone, while x-ray diffraction is more useful for structural analyses.structural analyses.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.525-526
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• 2009

we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• Journal of Magnetics
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• v.8 no.4
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• pp.133-137
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• 2003

The magnetostatic properties of the as-deposited and annealed at T=300 and 400$^{\circ}C$ Ni films were investigated employing both magneto-optical magnetometer and VSM. The Ni films of 50∼200 nm thicknesses were prepared by DC magnetron sputtering technique. The strong influence of annealing temperature on magnetostatic properties of the studied samples was discovered. For the annealed Ni films, the increase of the coercivity H$_c$ (up to 4 times) in comparison with that of as-deposited samples was revealed. The obtained results were explained by using crystallographic structural data of the samples.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• Journal of the Optical Society of Korea
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• v.5 no.1
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• pp.1-4
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• 2001

The results of investigating $SiL_{2,3}$/ X-ray emission valence spectra of amorphous silicon films irradiated by excimer laser are presented. It is found that laser annealing leads to crystallization of amorphous silicon films and the crystallinity increases with the laser energy density from 250 to 400 mJ/$\textrm{cm}^2$. The vertical structure of the film is investigated by changing the accelerating voltage on the X-ray tube, and the chemical and structural state of Si$_3$N$_4$ buffer layer is found not to be changed by the excimer laser treatment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.48.1-48.1
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• 2007