• Current Optics and Photonics
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• 제2권2호
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• pp.147-152
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• 2018

We propose a novel bi-focal metallic Fresnel zone plate (MFZP) with shallow depth-of-field (DOF) characteristics. We design the specific annular slit patterns, exploiting the phase-selection-rule method along with the particle swarm optimization algorithm, which we have recently proposed. We numerically investigate the novel characteristics of the bi-focal MFZP in comparison with those of another bi-focal MFZP having equivalent functionality but designed by the conventional multi-zone method. We verify that whilst both bi-focal MFZPs can produce dual focal spots at $15{\mu}m$ and $25{\mu}m$ away from the MFZP plane, the former exhibits characteristics superior to those of the latter from the viewpoint of axial resolution, including the axial side lobe suppression and axial DOF shallowness. We expect the proposed bi-focal MFZP can readily be fabricated with electron-beam evaporation and focused-ion-beam processes and further be exploited for various applications, such as laser micro-machining, optical trapping, biochemical sensing, confocal sensing, etc.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.195-198
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• 2014

In this paper, a measurement method to obtain the optical properties of a liquid base on a side-polished single mode fiber was proposed and demonstrated. The device showed periodic resonance coupling against wavelengths. The refractive index and dispersion characteristics of a liquid were calculated by use of the spacings of periodic resonance wavelengths of the device. The thermo-optic coefficient of the liquid was obtained by monitering the shift of resonance wavelengths of the devices with change of environmental temperature.

• 한국광학회지
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• 제19권1호
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• pp.48-53
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• 2008

본 논문에서는 $90^{\circ}$ 꼬인 네마틱 액정 셀에 전계를 인가하지 않았을 때 어두운 상태를 나타내는 normally black 모드 구현 시, 높은 명암비를 제공하는 광학구조를 제안하였다. 제안된 구조에서 +A 필름과 ${\lambda}/2$ 필름을 각각 1 장씩 사용하여 $90^{\circ}$ 꼬인 액정층을 통과한 빛의 가시광 파장대에서 편광 상태가 거의 동일하게 만들어 줌으로써, 어두운 상태의 분광특성을 향상시킬 수 있다. PSD(Parameter Space Diagram) 방법을 사용하여 최적조건을 구해 계산한 결과 500: 1 이상의 높은 명암비를 확보할 수 있었으며, 어두운 상태뿐만 아니라 밝은 상태의 분광특성도 향상됨을 시뮬레이션 및 실험을 통해 확인할 수 있었다.

• Journal of Information Processing Systems
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• 제10권2호
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• pp.215-222
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• 2014

In this paper, we discuss optical encryption and decryption considering wireless communication channels. In wireless communication systems, the wireless channel causes noise and fading effects of the transmitted information. Optical encryption technique such as double-random-phase encryption (DRPE) is used for encrypting transmitted data. When the encrypted data is transmitted, the information may be lost or distorted because there are a lot of factors such as channel noise, propagation fading, etc. Thus, using digital modulation and maximum likelihood (ML) detection, the noise and fading effects are mitigated, and the encrypted data is estimated well at the receiver. To the best of our knowledge, this is the first report that considers the wireless channel characteristics of the optical encryption technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Current Optics and Photonics
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• 제2권1호
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권5호
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• pp.263-266
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• 2006

An optical microphone was developed using a dual-core multi-mode fiber block and a membrane type micromirror. The fiber block serves as a compact optical head, and the micromirror as a reflective diaphragm. The micromirror is designed to be suspended through a silicon bar connected t a frame, allowing for displacement induced by acoustic waves. The optical head is implemented by integrating two multi-mode fibers in a single block, and used to transfer light signals between it and the diaphragm. For the assembled microphone, its static characteristics were observed to reveal the operating point defined as the optimum distance between the optical head and the diaphragm. And its dynamic response was tested to exhibit a frequency bandwidth of 3 kHz with the variation of $\sim5dB$.

• ETRI Journal
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• 제28권1호
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• pp.9-16
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• 2006

In this paper, we analyzed and measured the electrical crosstalk characteristics of a 1.25 Gbps triplexer module for Ethernet passive optical networks to realize fiber-tothe-home services. Electrical crosstalk characteristic of the 1.25 Gbps optical triplexer module on a resistive silicon substrate should be more serious than on a dielectric substrate. Consequently, using the finite element method, we analyze the electrical crosstalk phenomena and propose a silicon substrate structure with a dummy ground line that is the simplest low-crosstalk layout configuration in the 1.25 Gbps optical triplexer module. The triplexer module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and an analog photodetector as a cable television signal receiver. According to IEEE 802.3ah and ITU-T G.983.3, the digital receiver and analog receiver sensitivities have to meet -24 dBm at $BER=10^{-12}$ and -7.7 dBm at 44 dB SNR. The electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the dummy line with $100\;{\mu}m$ space from the signal lines and 4 mm separations among the devices satisfies the electrical crosstalk level compared to a simple structure. This proposed structure can be easily implemented with design convenience and greatly reduce the silicon substrate size by about 50 %.