• Journal of Ginseng Research
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• v.46 no.2
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• pp.235-247
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• 2022

Background: Ginsenoside Rg3 is one of the main active ingredients in ginseng. Here, we aimed to confirm its protective effect on the heart function in transverse aortic coarctation (TAC)-induced heart failure mice and explore the potential molecular mechanisms involved. Methods: The effects of ginsenoside Rg3 on heart and mitochondrial function were investigated by treating TAC-induced heart failure in mice. The mechanism of ginsenoside Rg3 for improving heart and mitochondrial function in mice with heart failure was predicted through integrative analysis of the proteome and plasma metabolome. Glucose uptake and myocardial insulin sensitivity were evaluated using micro-positron emission tomography. The effect of ginsenoside Rg3 on myocardial insulin sensitivity was clarified by combining in vivo animal experiments and in vitro cell experiments. Results: Treatment of TAC-induced mouse models with ginsenoside Rg3 significantly improved heart function and protected mitochondrial structure and function. Fusion of metabolomics, proteomics, and targeted metabolomics data showed that Rg3 regulated the glycolysis process, and Rg3 not only regulated glucose uptake but also improve myocardial insulin resistance. The molecular mechanism of ginsenoside Rg3 regulation of glucose metabolism was determined by exploring the interaction pathways of AMPK, insulin resistance, and glucose metabolism. The effect of ginsenoside Rg3 on the promotion of glucose uptake in IR-H9c2 cells by AMPK activation was dependent on the insulin signaling pathway. Conclusions: Ginsenoside Rg3 modulates glucose metabolism and significantly ameliorates insulin resistance through activation of the AMPK pathway.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.1
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• pp.13-21
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• 2004

In the design of superconducting cable systems, quench analysis have to be advanced for applying to a real systems. It is necessary to calculate the current, voltage and resistance during the quench. Simulation program named EMTDC was used to analyze the quench state. Normal zone evaluation and quench development with EMTDC are one of the major features of quench analysis. This paper presents the two kinds of quench control models which are the Switch Control Type and the Fortran Control Type. In case of the quench developing area, the simplicity cable model consist of resistance, inductance and capacitance. The impedance of the pipe type superconducting cable is calculated by numerical analysis method. The resistance and inductance increased during quench. However the variation have an effect on the fault current. The voltage was also developed by resistance and inductance. This paper presents the relationship between the current. voltage, resistance and inductance during quench.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Journal of Crop Science and Biotechnology
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• v.11 no.3
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• pp.177-180
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• 2008

Worldwide, cyst nematode(Heterodera glycines Ichinohe) is the most destructive pathogen of cultivated soybean. In the USA, current annual yield losses are estimated to be nearly a billion dollars. Crop losses are primarily reduced by the use of resistant cultivars. Nematode populations are variable and have adapted to reproduce on resistant cultivars over time because resistance primarily traces to two soybean accessions. It is important to use diverse resistance sources to develop new nematode resistant cultivars. Soybean PI 494182 is a recent introduction from Japan and found to be resistant to multiple nematode populations. It is yellow seeded and maturity group 0. We have determined inheritance of resistance in PI 494182 using $F_{2:3}$ families derived from cross PI 494182 X cv. Skylla. Skylla is a susceptible parent. Three nematode populations, races 1, 3, and 5, corresponding to HG types 2.5.7, 0, and 2.5.7 were used to bioassay 162 $F_{2:3}$ families in greenhouse experiments. Based on Chi-square tests, a two-gene model is proposed for resistance to race 1 and a three-gene model is proposed for conditioning resistance to both races 3 and 5. Correlation coefficient analysis indicated that some genes conditioning resistance to races 1, 3, and 5 are shared or closely linked with each other. These results will be useful to soybean breeders for developing soybean cultivars for broad resistance to nematodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.911-915
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• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.530-537
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• 2008

This paper describes the results of a study on the tracking performance of outdoor insulating materials based on the rotating wheel dip test(RWDT). And, the influence of surface degradation was evaluated through such as measurement of the flashover voltage after and before tracking test, also aspects of surface degradation using scanning electron microscopy. The time to tracking breakdown of treated filled specimen is longer than untreated filled specimen. And, after the RWDT, the surface of specimen by adding untreated filler appeared heavy erosion. It was found that the addition to surface treated filler, the better tracking resistance. In the RWDT, the breakdown specimen is not affected by the dry flashover voltage, despite the fact that the surface degradation of tracking test has different state on each specimen. This suggests that wet flashover voltage play an important role in evaluating of tracking and erosion on the surface degradation in tracking test. And, the flashover voltage of specimen under wet conditions are greatly affected by the salt concentration and degree of degradation by the RWDT Because of hydrophobicity and degree of degradation by the RWDT, the flashover voltage of treated filled specimen is higher than that of untreated filled specimen. Different types of specimen may have different hydrophobicity and their surface state under contaminated conditions may not be the same.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.66-78
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• 2009

This paper introduces the design of a fuzzy logic controller in conjunction with direct torque control strategy for a Permanent Magnet synchronous machine. A stator flux angle mapping technique is proposed to reduce significantly the size of the rule base to a great extent so that the fuzzy reasoning speed increases. Also, a fuzzy resistance estimator is developed to estimate the change in the stator resistance. The change in the steady state value of stator current for a constant torque and flux reference is used to change the value of stator resistance used by the controller to match the machine resistance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.11
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• pp.1571-1577
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• 2015

A new mixed mode control of constant power and constant current for resistance spot welding inverter is proposed to improve the weld quality. The conventional control scheme adopts constant current or constant power control mode, however, it is not easy to guarantee the high weld quality because of the nonlinear resistance characteristics of the welding point. The proposed method utilizes the nonlinear characteristics by measuring the dynamic resistance in real time. Therefore, it is possible for the welder to be controlled adaptively depending on the welding state. Experimental results show that the proposed control scheme improves the weld quality by 6.8 times compared with the conventional constant current mode control.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.80-86
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• 2022

In this paper, the optimal design and circuit simulation verification results of an LLC resonant half-bridge dc-dc converter using a steady-state model with internal loss resistance are reported. Above all, the input/output voltage gain and frequency characteristic equations in the steady-state were derived by reflecting the internal loss resistance in the equivalent circuit. Based on the results, an LLC resonant half-bridge dc-dc converter with an input voltage of 360-420V, an output voltage of 54V, and a maximum power of 3kW was designed, and to verify the design, the PSIM circuit simulation was executed to compare and analyze the result. In particular, the operating range of the converter could be drawn from the frequency characteristic graph of the voltage gain, and when the converter was operated under light and maximum load conditions, it was confirmed that similar results were obtained by comparing simulation results and calculation results in the switching frequency characteristic graph. In addition, the change of the switching frequency with respect to the load current at each input voltage was compared with the calculated value and the simulation result. As a result, it was possible to confirm the usefulness of the analysis result reflecting the internal loss resistance proposed in this paper and the process of the optimal design.