• Title/Summary/Keyword: on-state resistance

검색결과 1,172건 처리시간 0.024초

Ginsenoside Rg3 ameliorates myocardial glucose metabolism and insulin resistance via activating the AMPK signaling pathway

  • Ni, Jingyu;Liu, Zhihao;Jiang, Miaomiao;Li, Lan;Deng, Jie;Wang, Xiaodan;Su, Jing;Zhu, Yan;He, Feng;Mao, Jingyuan;Gao, Xiumei;Fan, Guanwei
    • Journal of Ginseng Research
    • /
    • 제46권2호
    • /
    • pp.235-247
    • /
    • 2022
  • Background: Ginsenoside Rg3 is one of the main active ingredients in ginseng. Here, we aimed to confirm its protective effect on the heart function in transverse aortic coarctation (TAC)-induced heart failure mice and explore the potential molecular mechanisms involved. Methods: The effects of ginsenoside Rg3 on heart and mitochondrial function were investigated by treating TAC-induced heart failure in mice. The mechanism of ginsenoside Rg3 for improving heart and mitochondrial function in mice with heart failure was predicted through integrative analysis of the proteome and plasma metabolome. Glucose uptake and myocardial insulin sensitivity were evaluated using micro-positron emission tomography. The effect of ginsenoside Rg3 on myocardial insulin sensitivity was clarified by combining in vivo animal experiments and in vitro cell experiments. Results: Treatment of TAC-induced mouse models with ginsenoside Rg3 significantly improved heart function and protected mitochondrial structure and function. Fusion of metabolomics, proteomics, and targeted metabolomics data showed that Rg3 regulated the glycolysis process, and Rg3 not only regulated glucose uptake but also improve myocardial insulin resistance. The molecular mechanism of ginsenoside Rg3 regulation of glucose metabolism was determined by exploring the interaction pathways of AMPK, insulin resistance, and glucose metabolism. The effect of ginsenoside Rg3 on the promotion of glucose uptake in IR-H9c2 cells by AMPK activation was dependent on the insulin signaling pathway. Conclusions: Ginsenoside Rg3 modulates glucose metabolism and significantly ameliorates insulin resistance through activation of the AMPK pathway.

부스바 접점 가동시 접촉면에서 압점력 해석 (Analysis for Force Distribution on Surface Between Busbar Contacts)

  • 오연호;송기동;김귀식;김진기
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
    • /
    • pp.82-84
    • /
    • 2003
  • In case contact between point of contacts is not achieved well, contact resistance is grown, and by current concentration at current conducting contacts can weld. In order to decrease contact resistance between contacts in case of busbar, installing spring between fixed contact and moving contact. and then force on faying surface of contacts increase and contact resistance decrease. But, in case increase force of spring to widen contact area, operating force moving contact can grow, on the contrary force of spring is small, contact resistance becomes low. Therefore, need to optimize force and number of spring. position, and also need to examine force change on contact surface at point of contact moving. In this paper, dynamic kinetics analysis for force on faying surface of contacts is performed at unsteady state. It is showed to not uniform force on surface between contacts, and we can got more uniform force by means of change spring position.

  • PDF

초전도 케이블 계통에서의 켄치 모의 및 해석 (Quench Simulation and Analysis on Superconducting Cable Systems)

  • 김남열;이종범
    • 대한전기학회논문지:전력기술부문A
    • /
    • 제53권1호
    • /
    • pp.13-21
    • /
    • 2004
  • In the design of superconducting cable systems, quench analysis have to be advanced for applying to a real systems. It is necessary to calculate the current, voltage and resistance during the quench. Simulation program named EMTDC was used to analyze the quench state. Normal zone evaluation and quench development with EMTDC are one of the major features of quench analysis. This paper presents the two kinds of quench control models which are the Switch Control Type and the Fortran Control Type. In case of the quench developing area, the simplicity cable model consist of resistance, inductance and capacitance. The impedance of the pipe type superconducting cable is calculated by numerical analysis method. The resistance and inductance increased during quench. However the variation have an effect on the fault current. The voltage was also developed by resistance and inductance. This paper presents the relationship between the current. voltage, resistance and inductance during quench.

As Te Ge Si 무정형 반도체의 온도영향 (A study of the effect of the temperature on the As Te Ge Si amorphous semiconductor)

  • 박창엽
    • 전기의세계
    • /
    • 제23권6호
    • /
    • pp.49-55
    • /
    • 1974
  • Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

  • PDF

Inheritance of Cyst Nematode Resistance in a New Genetic Source, Glycine max PI 494182

  • Arelli, Prakash R.;Wang, Dechun
    • Journal of Crop Science and Biotechnology
    • /
    • 제11권3호
    • /
    • pp.177-180
    • /
    • 2008
  • Worldwide, cyst nematode(Heterodera glycines Ichinohe) is the most destructive pathogen of cultivated soybean. In the USA, current annual yield losses are estimated to be nearly a billion dollars. Crop losses are primarily reduced by the use of resistant cultivars. Nematode populations are variable and have adapted to reproduce on resistant cultivars over time because resistance primarily traces to two soybean accessions. It is important to use diverse resistance sources to develop new nematode resistant cultivars. Soybean PI 494182 is a recent introduction from Japan and found to be resistant to multiple nematode populations. It is yellow seeded and maturity group 0. We have determined inheritance of resistance in PI 494182 using $F_{2:3}$ families derived from cross PI 494182 X cv. Skylla. Skylla is a susceptible parent. Three nematode populations, races 1, 3, and 5, corresponding to HG types 2.5.7, 0, and 2.5.7 were used to bioassay 162 $F_{2:3}$ families in greenhouse experiments. Based on Chi-square tests, a two-gene model is proposed for resistance to race 1 and a three-gene model is proposed for conditioning resistance to both races 3 and 5. Correlation coefficient analysis indicated that some genes conditioning resistance to races 1, 3, and 5 are shared or closely linked with each other. These results will be useful to soybean breeders for developing soybean cultivars for broad resistance to nematodes.

  • PDF

공정 및 설계 변수가 고전압 LDMOSFET의 전기적 특성에 미치는 영향 (Impacts of Process and Design Parameters on the Electrical Characteristics of High-Voltage DMOSFETs)

  • 박훈수;이영기
    • 한국전기전자재료학회논문지
    • /
    • 제17권9호
    • /
    • pp.911-915
    • /
    • 2004
  • In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

Rotating Wheel Dip Test에 의한 에폭시 절연재료의 내트래킹성과 열화 특성 (Tracking Resistance and Aging Characteristics of Epoxy Insulating Materials by the Rotating Wheel Dip Test)

  • 조한구
    • 한국전기전자재료학회논문지
    • /
    • 제21권6호
    • /
    • pp.530-537
    • /
    • 2008
  • This paper describes the results of a study on the tracking performance of outdoor insulating materials based on the rotating wheel dip test(RWDT). And, the influence of surface degradation was evaluated through such as measurement of the flashover voltage after and before tracking test, also aspects of surface degradation using scanning electron microscopy. The time to tracking breakdown of treated filled specimen is longer than untreated filled specimen. And, after the RWDT, the surface of specimen by adding untreated filler appeared heavy erosion. It was found that the addition to surface treated filler, the better tracking resistance. In the RWDT, the breakdown specimen is not affected by the dry flashover voltage, despite the fact that the surface degradation of tracking test has different state on each specimen. This suggests that wet flashover voltage play an important role in evaluating of tracking and erosion on the surface degradation in tracking test. And, the flashover voltage of specimen under wet conditions are greatly affected by the salt concentration and degree of degradation by the RWDT Because of hydrophobicity and degree of degradation by the RWDT, the flashover voltage of treated filled specimen is higher than that of untreated filled specimen. Different types of specimen may have different hydrophobicity and their surface state under contaminated conditions may not be the same.

Direct Torque Control Strategy (DTC) Based on Fuzzy Logic Controller for a Permanent Magnet Synchronous Machine Drive

  • Tlemcani, A.;Bouchhida, O.;Benmansour, K.;Boudana, D.;Boucherit, M.S.
    • Journal of Electrical Engineering and Technology
    • /
    • 제4권1호
    • /
    • pp.66-78
    • /
    • 2009
  • This paper introduces the design of a fuzzy logic controller in conjunction with direct torque control strategy for a Permanent Magnet synchronous machine. A stator flux angle mapping technique is proposed to reduce significantly the size of the rule base to a great extent so that the fuzzy reasoning speed increases. Also, a fuzzy resistance estimator is developed to estimate the change in the stator resistance. The change in the steady state value of stator current for a constant torque and flux reference is used to change the value of stator resistance used by the controller to match the machine resistance.

동저항 특성을 이용한 저항 스폿 용접기의 정전력과 정전류의 혼합모드 제어 (Mixed Mode Control of Constant Power and Constant Current for Resistance Spot Welder using Dynamic Resistance Characteristics)

  • 강성관;정재헌;노의철
    • 전기학회논문지
    • /
    • 제64권11호
    • /
    • pp.1571-1577
    • /
    • 2015
  • A new mixed mode control of constant power and constant current for resistance spot welding inverter is proposed to improve the weld quality. The conventional control scheme adopts constant current or constant power control mode, however, it is not easy to guarantee the high weld quality because of the nonlinear resistance characteristics of the welding point. The proposed method utilizes the nonlinear characteristics by measuring the dynamic resistance in real time. Therefore, it is possible for the welder to be controlled adaptively depending on the welding state. Experimental results show that the proposed control scheme improves the weld quality by 6.8 times compared with the conventional constant current mode control.

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

  • Lho, Young Hwan;Yang, Yil-Suk
    • ETRI Journal
    • /
    • 제37권5호
    • /
    • pp.951-960
    • /
    • 2015
  • For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.