• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.239-245
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• 2016

In this study, a 12 V PWM boost converter was designed with the optimal values of the external components of the power stage was well as the compensation stage for smart electronic applications powered by a battery device. The 12 V boost PWM converter consisted of several passive elements, such as a resistor, inductor and capacitor with a diode, power MOS switch and control IC chip for the control PWM signal. The devices of the power stage and compensation stage were designed to maintain stable operation under a range of load conditions as well as achieving the highest power efficiency. The results of this study were first verified by a simulation in SPICE from calculations of the values of major external elements comprising the converter. The design was also implemented on the prototype PCBboard using commercial IC LM3481 from Texas Instruments, which has a nominal output voltage of 12 V. The output voltage, ripple voltage, and load regulation with the line regulation were measured using a digital oscilloscope, DMM tester, and DC power supply. By configuring the converter under the same conditions as in the circuit simulation, the experimental results matched the simulation results.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.148-155
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• 2001

A pressure sensor on the tip of a catheter which is utilized to measure the in-vivo pressure in a human body was fabricated and the characteristic of the pressure sensor as measured. To fit into a catheter with 1 mm caliber, samples of $150\;{\mu}m$(thickness) ${\times}$ (600, 700, 800, 900, 1000) ${\mu}m$(width) ${\times}2\;mm$(length) was fabricated. The thicker face with $450\;{\mu}m$ thickness of SDB wafer was made thin to $134\;{\mu}m$ thickness using KOH etchant and it made possible to fabricate sensor cell with the width shorter than 1 mm. Different to the whitstone bridge sensor, we formed one piezoresistor and one reference resistor in sensor. Therefore there are possibilities of reduction of the sensitivity, then by using the simulation tool ANSYS 5.5.1, the location and the type of the piezoresistor was optimized. Another piezoresistor type of sensor which contain one longitudinal and one transverse piezoresistor was fabricated at the same time, but the sensitivity was not improved very much. To get the output versus the pressure, a constant current source and a implementation amplifier was used. As a result, the maximum sensitivity of the sensor with one piezoresistor was $1.6\;{\mu}V/V/mmHg$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7287-7291
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• 2014

A CDTA (current differencing transconductance amplifier) is an active building block for current mode analog signal processing with the advantages of high linearity and a wide frequency bandwidth. In addition, it can generate a stable voltage because all the differencing input current flows to the grounded devices. In this paper, a new small signal equivalent circuit is proposed to analyze a CDTA. The proposed small signal equivalent circuit provides greater precision in analyzing the magnitude and frequency response than its previous counterparts because it considers the parasitic components of the input, internal and output terminal. In addition, observations of the changes made in various devices, such as the resistor (Rz) confirmed that those devices heavily influence the characteristics of CDTA. The designed parameters of the proposed small signal equivalent circuit of the CDTA provides convenience and accuracy in the further design of analog integrated circuits. For verification purposes, a 2.5 MHz low pass filter was designed on the HSPICE simulation program using the proposed small signal equivalent circuit of CDTA.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.6
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• pp.2484-2490
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• 2012

This study reports on the development and performance verification of cell simulation boards of simulator and the embedded program for board control of the battery management system (BMS) of electric vehicle (EV) cars, which manages the next-generation automotive lithium-ion battery pack. Here, we have improved the speed of the simulator by using operational (OP) amplifier and transistors that were connected in series. In addition, using a digital analog converter (DAC) in each channel, we have improved the performance by channel-to-channel isolation (isolation) as compared to the traditional methods. Furthermore, by constructing a current-limiting protection circuit, one can be protected from disturbance and, by utilizing a precision shunt resistor for the current sensor, we have increased the precision of the current control. In order to verify the performance of the developed simulator, we have performed the experiment 10 times, with values ranging from 0.5 V to 5 V, and a voltage drop step of 0.5 V. Significance analysis of experimental data, and repeatability tests were performed, showing an average standard deviation of 0.001~0.004 V, indicating high repeatability and high statistical significance of the current method and system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.376-383
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• 2008

Generally a return current plane(RCP) of high speed digital and analog part is partitioned. This is achieved in order to decrease the noise interference between subsystem in PCBs(Printed Circuit Boards). However, when the connected signal line exists between each subsystem, this partition will cause unwanted effects. In a EMI(Electromagnetic Interference) point of view, the partition of the return current plane becomes a primary factor to increase the radiated emission. Component bridge(CB) is used for the way of maintaining radiated emission, still specific user's guide doesn't give sufficient principle. In a view point of EMI, design principle of multi-CB using method will be analyzed by measurement. And design principle of noise mitigation will be provided. Generally interval of multi-CB is ${\lambda}/20$ ferrite bead. In this study, When multi-CB connection is applied, design principle of ferrite bead and chip resistor is proved by measurement. Multi-connected chip resistance$(0{\Omega})$ is proved to be more effective design method in the point of EMI.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.366-375
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• 2008

Generally a return current plane(RCP) of high speed digital and analog part is partitioned. This is achieved in order to decrease the noise interference between subsystem in PCBs(Printed Circuit Boards). However, when the connected signal line exists between each sub system, this partition will cause unwanted effects. In a circuital point of view, RCP partition has a bad influence upon signal integrity. In a EMI(Electromagnetic Interference) point of view, the partition of the return current plane becomes a primary factor to increase the radiated emission. Component bridge(CB) is usecl for the way of maintaining signal integrity, still specific user's guide doesn't give sufficient principle. In a view point of signal integrity, design principle of multi-CB using method will be analyzed by measurement and simulation. And design principle of noise mitigation will be provided. Generally interval of CB is ${\lambda}/20$ ferrite bead. In this study. When multi-CB connection is applied, design principle of ferrite bead and chip resistor is proved by measurement and simulation. Multi-connected chip resistance$(0{\Omega})$ is proved to be more effective design method in the point of signal integrity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.312-321
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• 2012

The electric potential of plasma column is measured with the high voltage probe in a pair of atmospheric plasma jets operated by AC-voltage. According to the polarity of voltage applied to the electrodes, the polarity of plasma column potential has the same polarity of applied voltage. The high potential of plasma column at the side of high voltage electrode is decreased linearly along the plasma column to the ground side. Therefore, the plasma column seams to be a kind of resistor whose resistivity is a few 10s $M{\Omega}/m$. In the experiment of double-jets system, the polarity of plasma potential is verified to be the same polarity to the applied voltage. When the different voltage polarities are applied to the electrodes of double plasma jets, the attractive force is acted between two plumes at the merged plasma and the plasma potential is measured to be low as a few 10s V. When the same polarity of voltage is applied to the electrode, the repulsive force is acted and the plasma potential is measured to be high as a several 100s V at the merged plumes. In the exposure of plasma plume on the bio-substrate with the double plasma jets, the electric shock and thermal damage might be proportional to the plasma power which is the multiplication of the plasma potential and the plasma current.