• Journal of the Korean Ceramic Society
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• v.19 no.2
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• pp.95-100
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• 1982

Instead of barium carbonate, domestic barite was used as the flux in manufacturing theinsulating porcelain. To avoid the problems arising from the decomposition of barite in the body during firing, BaO.$Al_2O_3$ was synthesized at $1300^{\circ}C$ for 5 hours. synthetic BaO.$Al_2O_3$ was mixed with other materials such as kaoline, alumina, clay, dolomite. The RO content (CaO. MgO. BaO) of the batches was varied from range of 4 to 14wt. % at 2wt. % - intervals, and firing temperature was varied from 1280 to 140$0^{\circ}C$-at 4$0^{\circ}C$ intervals The properties such as water absorption, bulk density. mechnical strength, specific resistance, and linear shrinkage were measured. The body containing 12 wt.% of RO content showed the satisfactory for the application in the Fixed Carbon Film Resistor.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1740-1745
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• 2004

A simplified resistor network model for electrical and mass transport in anode-supported planar solid oxide fuel cell (SOFC) was constructed in order to investigate the effect of interconnect rib geometry on the cell performance. For accurate potential calculation, activation and concentration over-potentials at the electrode/electrolyte interfaces were fully considered in this calculation. When contact resistance was not considered, the optimum interconnect rib length were calculated to be $0.1{\sim}0.2$ mm for 2 mm half unit cell for given operation conditions and properties. However, with realistic contact resistance, the interconnect rib length should be increased to provide larger contact area and thus to obtain better performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2007.04a
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• pp.115-127
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• 2007

[ ${\blacktriangleright$ ] Various Factors to affect TC Reliability of 4 array RES has been Investigated through Simulation Tool and Daisy Chain Board Test ${\blacktriangleright$ Solder Joint Crack Mechanism of 4 array RES has been Examined Also, It has been Examined Thoroughly What Influence Each Factors gibes to TC Reliability and Why Those Factors gives an Influence to it ${\blacktriangleright$ BGA Type RES is Suggested to Improve TC Reliability (Patented) ${\blacktriangleright$ Through this Study, Best Design Parameter has been Optimized to Increase TC Reliability of 4 Array RES

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.335-335
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• 2010

$SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $ZrO_2$, $Bi_2O_3$를 이용하여 성질이 다른 두 종류의 무연계 프릿트를 제조하여 특성을 표준화 하였고, 이들 무연계 프릿트를 이용하여 Ag계 도체 및 $RuO_2$계 저항페이스트롤 제조하여 특성에 미치는 프릿트 조성의 영향을 연구하였다. $B_2O_3$를 첨가하여 퍼짐특성이 큰 프릿트의 경우 더 우수한 페이스트 특성을 나타내었다.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.25 no.6
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• pp.406-413
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• 2015

The piezoelectric coupling in piezoelectric vibration energy harvesters with load resistance induces electrical damping as well as increase in the system stiffness. Starting from analytically deriving the explicit relations through governing equations in the frequency domain, this work identifies the characteristics of the electrically induced damping mechanism and shows that the electrically induced damping serves as a structural hysteretic damping on condition that a piezoelectric vibration energy harvester is excited at its short-circuit resonant frequency and its load resistor is optimally impedance- matched at the same time. Finally, it is analytically verified that the equivalence of a mechanical and an electrically induced damping ratio is required for the maximum power generation at a load resistor, which was claimed in some literature.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.1
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• pp.83-90
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• 1994

In this paper, the GYRATOR circuit is designed by the highly linear MOS transconductor with the gain factor controllable by offset voltage, and the floating inductor, the floating resistor and the grounded resistor are simulated by the GYTATOR for VLSI. And for the design exmple, Butterworth filter is designed using this GYRATOR, and is conpensated by the frequency transformation for the frequency shift that due to non-ideal output impedance of transconductor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1276-1282
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• 2003

The SMT(Surface Mount Type) ferrite bead used to reduce the influx of power bus noise is modeled with parallel capacitor(C), series resistor(R) and series inductor(L). The simple equivalent circuit modeling doesn't agree with the measurement result. In this paper, we proposed the accurate equivalent circuit model of the ferrite bead at wide frequency range(50 MHz∼3 GHz) and analyzed the noise effect to the high speed IC(Integrate Circuit) with ferrite bead or not.