• Journal of the Korean Institute of Traditional Landscape Architecture
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• v.28 no.2
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• pp.67-74
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• 2010

Law-protected trees are our precious asset as natural resources with history and tradition and natural heritage which should be protected and maintained well to bequeath next generation. Law-protected trees have not only thremmatologic and genetic meaning but also environmental and emotional meaning for their value to be high. This study investigated location, vitality, wrapping condition of root area and status of maintenance of the trees to figure out their growth environment and status of maintenance in a small-middle city through survey on those of law-protected trees in Je-cheon. There showed 300 more year old trees in Je-cheon mostly and the number of trees located in flat fields was the highest. For location type, village, hill and road types were presented in the order and for degree of development, land for building was found most frequently. The average electric resistance of the formative layer was measured to be $8.4k{\Omega}$ and four trees showed bark separation. Most law-protected trees underwent tree surgery, and complete bareness of root area was observed in a tree. The root area of two trees was covered with concrete. pH of soil was recorded to be 5.0~8.4 with its average of 7.1 and electric conductivity(EC) was less than 0.5 dS/m. For status of maintenance rearing facilities were placed for 16 trees out of totally 48 ones and stone fence was done for three ones. Tree surgery was conducted for 33 trees to prevent and to treat decomposed parts of holes. Direction boards were installed for 23 trees. Based on these results, measures to manage systematically law-protected trees in Jecheon could be suggested as follows. First, a sufficient space for growth of low part of trees should be secured. Second, a voluntary management should be induced by advertising them to residents in a community. Third, rearing facilities and direction boards of law-protected trees should be placed and related education should be conducted. Fourth, through operation of the department for law-protected trees consisting of related professions and cooperation among related departments the trees should be maintained continuously.

• Korean Journal of Food Science and Technology
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• v.34 no.2
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• pp.255-262
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• 2002

This experiment was performed to improve the stability of Lactobacillus fermentum YL-3 as a poultry probiotics. The culture conditions that improve acid tolerance of L. fermentum YL-3 were investigated by changing several factors such as medium composition, temperature, anaerobic incubation and culture time. Also, L. fermentum YL-3 was encapsulated with alginate, calcium chloride and chitosan. The stable culture conditions of L. fermentum YL-3 were obtained in anaerobic incubation using MRS media without tween 80 for 20 hour at $42^{\circ}C$. The capsule after treatment with 1% chitosan was formed close membrane by a bridge bond. Immobilization of L. fermentum YL-3 in capsule was observed by confocal laser scanning microscopy, and cell viability was $2.0{\times}10^9\;CFU/g$ above the average. L. fermentum YL-3 capsule after acid treated at pH 2.0 for 3 hour survived about 40%, but those encapsulated with 1% chitosan survived about 65%. Survival rate of capsule stored at room temperature decreased about $2{\sim}3$ log cycle during 3 weeks, but viability of capsule stored at $4^{\circ}C$ during 3 weeks maintained almost $10^8\;CFU/g$ levels.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• Korean Journal of Environment and Ecology
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• v.14 no.2
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• pp.111-118
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• 2000

본연구는 울릉도의 성인봉과 태하령 지역의 산림 식생을 대상으로 199년 7-8월에 식생조사와 토양조사에 의한 너도밤나무 군락의 임분구조 및 DCCA ordination을 이용하여 분석한 결과는 다음과 같다. 1. 울릉도 산림의 중요치를 각 군락별로 살펴보면 너도밤나무-섬조릿대 군락에서 중요치가 높은 종은 너도밤나무, 우산고로쇠, 마가목, 섬단풍, 섬벚나무 등의 순으로 너도 밤나무-일색고사리 군락은 우산고로쇠 너도밤나무, 마가목 층층나무, 등수국 등의 순으로 나타났다 그리고 너도밤나무-큰두루미꽃 군락에서 중요치가 높은 종은 너도밤나무 우산고로쇠 등수국 마가목 음나무등의 순으로 솔송나무-섬잣나무 군락은 섬잣나무, 너도밤나무, 솔송나무, 회솔나무, 섬피나무 등의 순으로 나타났다. 2. DCCA ordination에 의하면 산림군락과 환경요인과의 상관관계는 다음과 같다 너도밤나무-섬조릿대 군락은 해발고가 높고 네 군락 중 토양수분이나 전절소 유기물 등이 많은 지역에 분포하고 있었다. 너도밤나무-일색고사리 군락은 해발고가 다른 군집보다 높고 토양수분이나 전질소, 유기물 등이 많아 너도밤나무-섬조릿대 군락과 매우 유사한 입지환경을 가진 지역이나 토성 중 clay 가 많이 함유된 지역에 분포하고 있었다. 너도밤나무-큰두루미꽃 군락은 해발고가 네 군락 중 중간지역에 분포하고 있으며 토양수분이나 유기물, 전질소 등도 중간인 지역에 분포하고 있었다. 솔송나무-섬잣나무 군락은 해발고가 낮고 토양수분이나 전질소, 유기물이 적고 sand가 많이 함유된 토양에 분포하고 있었다. 3. 울릉도 산림군락으 Shannon의 종다양도 지수는 0.5455~0.8801으로 비교적 낮은 수치를 나타내고 있다. 또한 너도밤나무 군락에서 분포하고 있는 주요 종의 조서열 중요치 곡선을 보면 전체의 기울기가 완만하여 너도밤나무 군락은 안정적이라 할 수 있다.단 생산성 향상을 위한 세포의 고농도 배양에는 조사한 여러 배양 시스템 중에 가장 효율적인 시스템임올 알 수 있었다 하지만 이 시스템 에서 포도당을 낮은 level로 유지할 수 있었으나, 초산의 과도한 축적으로 항체 생산성의 향상은 예상에 비해 크지 않았다. 81%), C18 0(12.38%), C18: 1(25.93%), C22:6(9.95%)이며 결합지방질(結合脂肪質)은 C14 : 0(11.60%), C16 : 0(18.94%), C16: 1(10.42%). C18 : 1(10.89%), C22 : 6(23.44%)이었다. 총필수지방산(總必須脂肪酸) 함량(含量)은 극성지방질(極成脂肪質)$(20.14{\sim}31.12%)$이 비극성지방질(非極成脂肪質)$(6.97{\sim}11.13%)$보다 훨씬 높았고, 결합지방질(結合脂肪質)이 유리지방질(遊離脂肪質)보다 높았으며 부위별(部位別)로는 피부(皮部)$(15.18{\sim}15.41%)$가 육질부(肉質部)$(6.97{\sim}11.13%)$보다 높았다. 또${\omega}3$고도부포화지방산(高度不飽和脂肪酸) 함량(含量)은 육질부(肉質部)$(15.15{\sim}28.32%)$가 피부(皮部)$(6.77{\sim}18.18%)$나 내장부(內臟部)$(8.35{\sim}9.74%)$보다 높았으며, 육질부(肉質部)에서는 극성지방질(極成脂肪質)$(26.28{\sim}34.18%)$이 비극성지방질(非極成脂肪質)$(15.15{\sim}28.32%)$보다 높았다.veral world-wide prediction models. Based on the analysis, we can easilty know

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.796-803
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• 1997

The PVT and $^2H$-NMR characteristic of main-chain dimer liquid crystals having structures such as ${\alpha}$, ${\omega}$-bis[4,4'-cyanobiphenyl) oxy] alkane(CBA-10) were studied. In this work, V-T curves obtained from isobaris measurements on various pressures, volume changes were observed at the nematic-isotropic and nematic-crystal phase transition. The volume changes at the transition exhibit slight odd-even effect with respect to the number of methylene unit n. The values of the$({\Delta}S_{tr})_V$ obtained at the NI transition for CBA-10 was $12.6J/mol{\cdot}K$. The values of $({\Delta}S_{CN})_V$ for the CN transition was estimated on the basis of DSC data : $65.3J/mol{\cdot}K$. For both transition, it was found that the correction about the volume change is significant, ranging from 40 to 60% of the total transition entropy observed under constant pressure. The RIS analysis of the spectra was performed so as to elucidate the conformational characteristics of the spacer in the nematic phase. The conformational entropy changes at both CN and NI interphases were estimated on the basis of the nematic conformations taken from the conformation map as well as those derived from the simulation. The estimated conformational entropy change values were then compared with the corresponding constant-volume entropies obtained from PVT measurements. The correspondence between both entropy values was found to be quite good in consideration of the uncertainties involved in both experiment and calculations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.89-93
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• 2014

In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.

• Journal of Environmental Science International
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• v.19 no.12
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• pp.1323-1334
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• 2010

The effect of nitric oxide (NO) on antioxidant system and protective mechanism against oxidative stress under UV-B radiation was investigated in leaves of maize (Zea mays L.) seedlings during 3 days growth period. UV-B irradiation caused a decrease of leaf biomass including leaf length, width and weight during growth. Application of NO donor, sodium nitroprusside (SNP), significantly alleviated UV-B stress induced growth suppression. NO donor permitted the survival of more green leaf tissue preventing chlorophyll content reduction and of higher quantum yield for photosystem II than in non-treated controls under UV-B stress, suggesting that NO has protective effect on chloroplast membrane in maize leaves. Flavonoids and anthocyanin, UV-B absorbing compounds, were significantly accumulated in the maize leaves upon UV-B exposure. Moreover, the increase of these compounds was intensified in the NO treated seedlings. UV-B treatment resulted in lipid peroxidation and induced accumulation of hydrogen peroxide ($H_2O_2$) in maize leaves, while NO donor prevented UV-B induced increase in the contents of malondialdehyde (MDA) and $H_2O_2$. These results demonstrate that NO serves as antioxidant agent able to scavenge $H_2O_2$ to protect plant cells from oxidative damage. The activities of two antioxidant enzymes that scavenge reactive oxygen species, catalase (CAT) and ascorbate peroxidase (APX) in maize leaves in the presence of NO donor under UV-B stress were higher than those under UV-B stress alone. Application of 2-(4-carboxyphenyl)-4, 4, 5, 5-tetramethylimidazoline-1-oxyl-3- oxide (PTIO), a specific NO scavenger, to the maize leaves arrested NO donor mediated protective effect on leaf growth, photosynthetic pigment and free radical scavenging activity. However, PTIO had little effect on maize leaves under UV-B stress compared with that of UV-B stress alone. $N^{\omega}$-nitro-L-arginine (LNNA), an inhibitor of nitric oxide synthase (NOS), significantly increased $H_2O_2$ and MDA accumulation and decreased antioxidant enzyme activities in maize leaves under UV-B stress. This demonstrates that NOS inhibitor LNNA has opposite effects on oxidative resistance. From these results it is suggested that NO might act as a signal in activating active oxygen scavenging system that protects plants from oxidative stress induced by UV-B radiation and thus confer UV-B tolerance.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.