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http://dx.doi.org/10.6111/JKCGCT.2014.24.3.089

Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE  

Ha, Ju-Hyung (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University)
Park, Mi-Seon (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University)
Lee, Won-Jae (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University)
Choi, Young-Jun (LumiGNtech Co., Ltd.)
Lee, Hae-Yong (LumiGNtech Co., Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.24, no.3, 2014 , pp. 89-93 More about this Journal
Abstract
In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.
Keywords
a-plane GaN; r-plane sapphire; HVPE; Omega scan; AFM;
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