• Journal of Microbiology and Biotechnology
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• 제22권12호
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• pp.1621-1628
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• 2012

The agar-degrading bacterium GNUM-1 was isolated from the brown algal species Sargassum serratifolium, which was obtained from the West Sea of Korea, by using the selective artificial seawater agar plate. The cells were Gram-negative, $0.5-0.6{\mu}m$ wide and $2.0-2.5{\mu}m$ long curved rods with a single polar flagellum, forming nonpigmented, circular, smooth colonies. Cells grew at $20^{\circ}C-37^{\circ}C$, between pH 5.0 and 9.0, and at 1-10% (w/v) NaCl. The DNA G+C content of the GNUM-1 strain was 45.5 mol%. The 16S rRNA sequence of the GNUM-1 was very similar to those of Alteromonas stellipolaris LMG 21861 (99.86% sequence homology) and Alteromonas addita $R10SW13^T$(99.64% sequence homology), which led us to assign it to the genus Alteromonas. It showed positive activities for agarase, amylase, gelatinase, alkaline phosphatase, esterase (C8), lipase (C14), leucine arylamidase, valine arylamidase, ${\alpha}$-chymotrypsin, acid phosphatase, naphthol-AS-BI-phosphohydrolase, ${\alpha}$-galactosidase, ${\beta}$-galactosidase, ${\beta}$-glucosidase, catalase, and urease. It can utilize citrate, malic acid, and trisodium citrate. The major fatty acids were summed feature 3 (21.5%, comprising $C_{16:1}{\omega}7c/iso-C_{15:0}$ 2-OH) and C16:0 (15.04%). On the basis of the variations in many biochemical characteristics, GNUM-1 was considered as unique and thus was named Alteromonas sp. GNUM-1. It produced the highest agarase activity in modified ASW medium containing 0.4% sucrose, but lower activity in rich media despite superior growth, implying that agarase production is tightly regulated and repressed in a rich nutrient condition. The 30 kDa protein with agarase activity was identified by zymography, and this report serves as the very first account of such a protein in the genus Alteromonas.

• 한국표면공학회지
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• 제49권2호
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• pp.152-158
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• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.548-551
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• 2000

Spinel phase LiF $e_{y}$M $n_{2-y}$ $O_4$samples are synthesized by calcining a LiOH.$H_2O$, Mn $O_2$and F $e_2$ $O_3$mixture at 80$0^{\circ}C$ for 36h in air. Preparing LiF $e_{y}$M $n_{2-y}$ $O_4$showed spinel phase with cubic phase. The ununiform distortion of the crystallite of the spinel LiF $e_{y}$M $n_{2-y}$ $O_4$was more stable than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first cycle and at the 70th cycle was about 113 and 90mAh/g, respectively. This cell capacity was retained about 82% of the first cycle after 70th cycle. Impedance profile of this cell was more stable than that pure. The resistance, the capacitance and chemical diffusion coefficients of lithium ion showed approximately 80$\Omega$, 36133.87$\mu$F ; 1.4$\times$10$^{-8}$ c $m^2$ $s^{-1}$ , respectively. , respectively.ely.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.515-518
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• 2011

In this work, we designed and fabricated a multilayer thin film Pb(Zr,Ti)$O_3$ cantilever with a Si proof mass for low frequency vibration energy harvesting applications. A mathematical model of a mu lti-layer composite beam was derived and applied in a parametric analysis of the piezoelectric cantilever. Finally, the dimensions of the cantilever were determined for the resonant frequency of the cantilever. W e fabricated a device with beam dimensions of about 4,930 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 12 ${\mu}M$, and an integrated Si proof mass with dimensions of about 1,410 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 450 ${\mu}M$. The resonant frequency, maximum peak voltage, and highest average power of the cantilever device were 84.5 Hz, 88 mV, and 0.166 ${\mu}Wat$ 1.0 g and 23.7 ${\Omega}$, respectively. The dimensions of the cantilever were determined for the resonance frequency of the cantilever.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.809-814
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• 2014

Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.

• 한국가금학회지
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• 제43권2호
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• pp.55-61
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• 2016

With the aim of investigating the differences in the quality traits of breast meat between spent hen and broiler chicken, the physicochemical characteristics, fatty acid profile and sensory attributes of breast meat from the two chicken types were assessed. A higher protein content and a lower moisture content were found in breast of spent hen compared to that of commercial broilers (P<0.05). No significant differences in crude fat and ash contents were detected between commercial broilers and the older spent hens (P>0.05). Spent hens showed a significantly lower pH value than did commercial broilers. Spent hen meat had a higher $L^*$ value than broiler chicken meat did (P<0.05). However, $a^*$ and $b^*$ values of breast meat were similar between spent hens and commercial broilers. Water holding capacity values measured in the breast meat were comparable between the two types of chicken used in this study (P>0.05). However, spent hen meat showed a higher cooking loss value than did broiler meat (P<0.05). Total polyunsaturated fatty acid content was significantly higher in spent hen meat compared to broiler meat, in particular eicosapentaenoic acid and docosahexaenoic acid. Nevertheless, sensory characteristics of breast meat were comparable between spent hen and broiler chicken. This information can help consumers to understand better the nutritive value and important quality traits of breast meat from commercial broilers and spent hens.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.132-132
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• 2000

Cu는 Al에 비하여 낮은 저항(1.8 $\mu$$\Omega$-cm)과 높은 EM 저항성을 가지고 있어 미래의 고속 ULSI 배선물질로 그 중요성이 더욱 증가되고 있으며, 현재까지 많은 연구가 진행되고 있다. 따라서, 본 논문에서는 이러한 방법들을 고려하여 CVD Cu의 문제점인 낮은 성장률의 개선과 Cu 박막의 특성을 향상하고자 수소 플라즈마 공정을 이용하여 plasma 전처리가 초기 Cu 핵생성에 미치는 영향에 대하여 연구하였다. 본 실험에 사용된 장비는 Cu RPCVD/MOCVD이다. 초기 Cu 핵의 생성에 있어서의 수소 플라즈마의 효과를 조사하기 위하여 다음과 같은 3가지의 방법으로 행하였다. 첫 번째는 Cu 박막 형성에서 플라즈마를 사용하지 않은 방법, 두 번째는 플라즈마 전처리공정을 행한 뒤, Cu 박막 증착시 플라즈마는 사용하지 않은 방법, 세 번재는 플라즈마 전처리공저을 행한 뒤 Cu 증착시에도 플라즈마를 사용한 방법이다. 이 세가지 방법의 핵생성 차이를 분석하기 위해서 각각 10초, 20초, 40초 증착시킨 후 grain의 크기와 개수를 비교하였다. 또한 플라즈마의 power에 따른 Cu 핵생성율도 조사하였다. 수소 전처리동안 working pressure는 10분 동안 1 torr로 유지되었으며 substrate의 온도는 20$0^{\circ}C$, r.f.power는 100watt로 설정하였다. Cu RPCVD의 증착조건은 r.f.power는 10watt, substrate의 온도는 20$0^{\circ}C$, gas pressure는 1 torr, Ar carrier gas는 50sccm, hydrogen processing gas는 100sccm, bubbler 온도는 4$0^{\circ}C$, gas line의 온돈느 6$0^{\circ}C$, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.205-205
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• 2010

투명 전극(transparent conducting oxide, TCO)은 높은 전기전도도 및 낮은 비저항 ($10^{-4}{\sim}10^{-3}\;{\Omega}cm$)과 가시광영역에서의 우수한 광투과도(> 80%) 특성을 가지며, 주로 디스플레이, 태양전지, 가스 센서 소자 등에 쓰인다. 투명전극으로 쓰이는 대표적인 물질로서는 ITO, ZnO, $SnO_2$ 등이 있으며, ITO는 전기적 특성이 우수하여 널리 사용되고 있으나 가격이 비싸고 화학적으로 불안정하고, ZnO는 ITO에 비해 가격이 저렴하지만 고온에서 불안정한 특성을 가지고 있다. 반면, $SnO_2$는 ITO와 ZnO에 비해 전기적 특성은 떨어지지만, 우수한 열적, 화학적 안정성 및 높은 내마모성을 가지고 제조단가가 저렴하여 TCO 재료로 많은 연구가 진행되고 있다. TCO 박막을 증착시키는 방법으로 CVD, ion plating, sputtering, spray pyrolysis 등이 있으며, 이 중 sputtering 방법은 균일한 입자로 균질의 박막을 입힐 수 있고 우수한 재현성과 낮은 온도에서도 증착이 가능하여 박막 제조 방법으로 널리 이용되고 있다. 본 연구에서는 $SnO_2$ 박막을 실리콘 (100) 및 글라스 (Eagle 2000) 기판 위에 RF magnetron sputtering 방법을 사용하여 제작하였다. 박막 증착을 위해 99.99%의 2 인치 un-doped $SnO_2$ 타겟을 사용하였고, 기판은 20 rpm 으로 회전시켜 균일한 박막이 형성될 수 있도록 하였으며, 초기 진공도는 $1{\times}10^{-6}\;Torr$가 되도록 하였다. 증착 변수로 기판-타겟간 거리, RF 파워, $O_2/(Ar+O_2)$ 비, 공정압력, 기판 온도 등을 각각 변화 시키며 $SnO_2$ 박막을 증착하였다. 증착된 박막의 구조적 및 광학적 특성을 분석하기위해 FE-SEM, AFM, XRD, UV/VIS spectrophotometer, Photoluminescence 등을 사용하였다.