• Proceedings of the Korean Geotechical Society Conference
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• 1998.03a
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• pp.203-212
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• 1998

• Proceedings of the Korean Geotechical Society Conference
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• 1998.03a
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• pp.179-186
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• 1998

• Proceedings of the Korean Geotechical Society Conference
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• 1999.10a
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• pp.405-414
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• 1999

The auger and screw piles have known an important evolution during the last decade. Besides the large success of augercast (CFA) piling systems, new systems have been developed combining, to a variable extent, the classical extraction auger with especially designed displacement tools in order to develop screw piles with partial or total lateral soil displacement. These last developments cover the whole range of lateral soil displacement and are more difficult than ever to compare. The authors present the latest evolutions in auger piling systems and compare them with respect to penetration performances, bearing capacities and amount of spoil generated. A special focus is given to a new efficient system: the OMEGA(H) pile in use in Korea since 1997. The results of the Hongcheon site are presented where this R system was applied for a new investment of the Korean National Housing Corporation (KNHC). This first important experience, with the execution of some 1,500 Omega piles with diameter 410 mm, is presented. The piles were installed through loose silty sands down to very dense sands and layers of gravel. The results of full-scale load tests are analysed and show the conformity with requirements of the clients.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.