• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.36-45
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• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.10-15
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• 2015

Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.73-78
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• 2002

The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.

• Journal of Radiation Industry
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• v.5 no.1
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• pp.95-99
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• 2011

The electrical and mechanical properties of electrode for radiation detection are very important. In general, Au electrode and CZT crystal are combined to form ohmic contacts, and the best energy resolution is shown at the Au electrode. The metal contacts are fabricated by electroless deposition method, sputtering deposition method and thermal evaporation method. The electrode fabrication is easy with use of the thermal evaporation method, while an adhesive strength is weak. Thus interface materials such as Ag, Al and Ni were investigated to overcome defects generated by the this method. The thickness of the interface material between the Au electrode and the CZT crystal was 100 Angstroms, the Au electrode with thickness of 400 Angstroms was deposited. The Al+Au electrode is shown that the results of current-voltage and radiation response are similar to results of Au electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.242-245
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• 2021

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.14-19
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• 2020

Here we present the comparative experimental study of the stability of the superconducting state in 4 mm YBCO tapes with copper lamination against local heat disturbances at 77 K. The samples are either directly cooled by immersing a bare YBCO tape into a liquid nitrogen pool or operate in nearly-adiabatic conditions when the tape is covered by a 0.6 mm layer of Kapton insulation. Main quench characteristics, i.e. minimum quench energies (MQEs) and normal zone propagation (NZP) velocities for both samples are measured and compared. Minimum NZP currents are determined by a low ohmic resistor technique eligible for obtaining V - I curves with a negative differential resistance. The region of transport currents satisfying the stationary stability criterion is found for the different cooling conditions. Finally, we use the critical temperature margin as a universal scaling parameter to compare the MQEs obtained in this work for YBCO tapes at 77 K with those taken from literature for low-temperature superconductors in vacuum at 4.2 K, as well as for MgB2 wires cooled with a cryocooler down to 20 K.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.1-5.1
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• 2009

Organic photovoltaic (OPV)cells have attracted considerable attention due to their potential for flexible, lightweight, and low-cost application of solar energy conversion. Since a 1% power conversion efficiency (PCE) OPV based on a single donor-acceptor heterojunction was reported by Tang, the PCE has steadily improved around 5%. It is well known that a high parallel (shunt)resistance and a low series resistance are required simultaneously to achieve ideal photovoltaic devices. The device should be free of leakage current through the device to maximize the parallel resistance. The series resistance is attributed to the ohmic loss in the whole device, which includes the bulk resistance and the contact resistance. The bulk resistance originated from the bulk resistance of the organic layer and the electrodes; the contact resistance comes from the interface between the electrodes and the active layer. Furthermore, it has been reported that the bulk resistance of the indium tin oxide (ITO) of the devices dominates the series resistance of OPVs for a large area more than $0.01\;cm^2$. Therefore, in practical application, the large area of ITO may significantly reduce the device performance. In this work, we investigated the effect of sheet resistance ($R_{sh}$) of deposited ITO on the performance of OPVs. It was found that the device performance of polythiophene-fullerene (P3HT:PCBM) bulk heterojunction OPVs was critically dependent on Rsh of the ITO electrode. With decreasing $R_{sh}$ of the ITO from 39 to $8.5\;{\Omega}/{\square}$, the fill factor (FF) of OPVs was dramatically improved from 0.407 to 0.580, resulting in improvement of PCE from $1.63{\pm}0.2$ to $2.5{\pm}0.1%$ underan AM1.5 simulated solar intensity of $100\;mW/cm^2$.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.13-16
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• 2008

Solid oxide fuel cell(SOFC) is an electrochemical energy conversion system with high efficiency and low-emission of pollution. In order to reduce the operating temperature of SOFC system under $800^{\circ}C$, the thickness reduction of YSZ electrolyte to be as thin as possible, e.g., less than 10 ${\mu}m$ are considered with the microstructure control and optimum design of unit cell. Methods for reducing the thickness of YSZ electrolyte have been investigated in coin cell. Moreover, a large unit cell($8cm{\times}8cm$) for SOFC was fabricated using an anode-supported electrolyte assembly with a thinner electrolyte layer, which was prepared by a tape casting method with a co-sintering technique. we studied the design factors such as active layer, electrolyte thickness, cathode composition, etc,. by the coin type of unit cell ahead of the fabrication process of a large unit cell and also reviewed about the evaluation technique of a large size unit cell such as interconnect design, sealing materials and current collector and so forth. Electrochemical evaluations of the unit cells, including measurements such as power density and impedance, were performed and analyzed. Maximum power density and polarization impedance of coin cell were 0.34W/$cm^2$ and $0.45{\Omega}cm^2$ at $800^{\circ}C$, respectively. However, Maxium power density of a large unit cell($5cm{\times}5cm$) decreased to 0.21W/$cm^2$ at $800^{\circ}C$ due to the increase of ohmic resistance. However, It was found that the potential value of a large unit cell loaded by 0.22A/$cm^2$ showed 0.76V at 100hrs without the degradation of unit cell.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.487-492
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• 2011

The effect of the application of lanthanum strontrium manganite and yttria-stabilized zirconia (LSM-YSZ) nano-composite fabricated by pulsed laser deposition (PLD) as a cathode of solid oxide fuel cell (SOFC) is studied. A gradient-structure thin-film cathode composed of 1 micron-thick LSM-YSZ deposited at an ambient pressure ($P_{amb}$) of 200 mTorr; 2 micron-thick LSM-YSZ deposited at a $P_{amb}$ of 300 mTorr; and 2 micron-thick lanthanum strontium cobaltite (LSC) current collecting layer was fabricated on an anode-supported SOFC with an ~8 micron-thick YSZ electrolyte. In comparison with a 1 micron-thick nano-structure single-phase LSM cathode fabricated by PLD, it was obviously effective to increase triple phase boundaries (TPB) over the whole thickness of the cathode layer by employing the composite and increasing the physical thickness of the cathode. Both polarization and ohmic resistances of the cell were significantly reduced and the power output of the cell was improved by a factor of 1.6.