• Title/Summary/Keyword: ohmic

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Study on the Steady-State and Dynamic Performance of Polymer Electrolyte Fuel Cells with the Changes of External and Self-Humidification Conditions (고분자 전해질 연료전지의 외부가습 및 지체가습 변화에 의한 정상상태 및 비정상상태 성능특성 연구)

  • Lee, Yong-Taek;Kim, Bo-Sung;Kim, Yong-Chan;Choi, Jong-Min
    • Journal of the Korean Electrochemical Society
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    • v.10 no.3
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    • pp.196-202
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    • 2007
  • The performance characteristics of the polymer electrolyte fuel cells (PEFCS) were investigated under various humidification conditions at steady-state and transient conditions. The PEFC studied in this study was characterized by I-V curves in the potentiostatic mode and EIS (electrochemical impedance spectroscopy). The I-V curves representing steady-state performance were obtained from OCV to 0.25 V, and the dynamic performance responses were obtained at some voltages. The effects of anodic external humidification were measured by varying relative humidity of hydrogen from 20% to 100% while dry air was supplied in the cathode. At the high voltage region, the performance became higher with the increase of the temperature, while at the low voltage region, the performance decreased with the increase of temperature. The EIS showed that ohmic losses were larger at the dry condition of membrane and the effects of mass transport losses increased remarkably when the external and self-humidification were high. The dynamic responses were also monitored by changing the voltage of the PEFC instantly. As the temperature increased, the current reached steady-state earlier. The self-humidification with the generated water delayed the stabilization of the current except for low voltage conditions.

Magnetoresistance of Bi Nanowires Grown by On-Film Formation of Nanowires for In-situ Self-assembled Interconnection

  • Ham, Jin-Hee;Kang, Joo-Hoon;Noh, Jin-Seo;Lee, Woo-Young
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.79-79
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    • 2010
  • Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

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Effect of Carbon Dioxide in Fuel on the Performance of PEMFC (연료중의 이산화탄소 불순물에 의한 고분자전해질연료전지의 성능변화 연구)

  • Seo, Jung-Geun;Kwon, Jun-Taek;Kim, Jun-Bom
    • Journal of the Korean Electrochemical Society
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    • v.11 no.1
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    • pp.42-46
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    • 2008
  • Even though fuel cell have high efficiency when pure hydrogen from gas tank is used as a fuel source, it is more beneficial to generate hydrogen from city gas (mainly methane) in residential application such as domestic or office environments. Thus hydrogen is generated by reforming process using hydrocarbon. Unfortunately, the reforming process for hydrogen production is accompanied with unavoidable impurities. Impurities such as CO, $CO_2$, $H_2S$, $NH_3$, $CH_4$, and $CH_4$ in hydrogen could cause negative effects on fuel cell performance. Those effects are kinetic losses due to poisoning of the electrode catalysts, ohmic losses due to proton conductivity reduction including membrane and catalyst ionomer layers, and mass transport losses due to degrading catalyst layer structure and hydrophobic property. Hydrogen produced from reformer eventually contains around 73% of $H_2$, 20% or less of $CO_2$, 5.8% of less of $N_2$, or 2% less of $CH_4$, and 10ppm or less of CO. This study is aimed at investigating the effect of carbon dioxide on fuel cell performance. The performance of PEM fuel cell was investigated using current vs. potential experiment, long run(10 hr) test, and electrochemical impedance measurement when the concentrations of carbon dioxide were 10%, 20% and 30%. Also, the concentration of impurity supplied to the fuel cell was verified by gas chromatography(GC).

Preparation of Squid-Jeotkal with Pasteurized Red Pepper II. Shelf-Life Extension of Squid-Jeotkal (살균고춧가루를 이용한 오징어젓갈 제조 II. 양념오징어젓갈의 보존성 연장)

  • 이현숙;이원동;고병호;이명숙
    • Journal of Food Hygiene and Safety
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    • v.15 no.1
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    • pp.18-24
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    • 2000
  • In this study, ohmic heating was applied for pasteurization of red pepper pow-der, and investigated its pasteurization effect. After pasteurization, seasoned squid-jeotkal was manufactured by using red pepper powder, and its quality changes were investigated. On com-paring sensory evaluation in squid-jeotkal by pasteurized and conventional red pepper powder during storage at 5, 16 and $25^{\circ}C$, quality changes in squid-jeotkal by the pasteurized red pepper powder. But quality change difference between two products were decrease with increasing stor-age temperature. Viable cell counts in two products stored at 5$^{\circ}C$ were increased slowly until 60 days. Viable cell counts in squid-jeotkal by conventional red pepper powder were increased up to ca. 10$^{8}$ CFU/g at 15, 25 $^{\circ}C$ after 30, 15 days, respectively, but that by pasteurized were ca. 10$^{8}$ CFU/g at $25^{\circ}C$ after 30 days. Changes in pH, VBN and NH$_2$-N in two products were shown difference significantly, but were decreased by increasing storage temperature. In squid-jeotkal by conventional red pepper powder, the main free amino acids were glutamic acid, leucine, glycine, aspartic acid and alanine, and these amino acids held 47.95% of the total free amino acid. But in squid-jeotkal by pasteurized red pepper powder, glutamic acid, glycine, aspartic acid, leucine and Iysine, and these amino acids held 57.58% of the total free amino acids.

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Analysis for Buffer Leakage Current of High-Voltage GaN Schottky Barrier Diode (고전압 GaN 쇼트키 장벽 다이오드의 완충층 누설전류 분석)

  • Hwang, Dae-Won;Ha, Min-Woo;Roh, Cheong-Hyun;Park, Jung-Ho;Hahn, Cheol-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.14-19
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    • 2011
  • We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

Structural and photoelectrical properties of copper phthalocyanine(CuPc) thin film on Si substrate by thermal evaporation (Si 기판위에 열증착법으로 제조한 copper phthalocyanine(CuPc) 박막의 구조 및 광전특성)

  • Lee, Hea-Yeon;Jeong, Jung-Hyun;Lee, Jong-Kyu
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.407-413
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    • 1997
  • The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

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Interfacial disruption effect on multilayer-films/GaN : Comparative study of Pd/Ni and Ni/Pd films

  • 김종호;강희재;김차연;전용석;서재명
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.113-113
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    • 2000
  • 직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

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Optimization of anode and electrolyte microstructure for Solid Oxide Fuel Cells (고체산화물 연료전지 연료극 및 전해질 미세구조 최적화)

  • Noh, Jong Hyeok;Myung, Jae-ha
    • Korean Chemical Engineering Research
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    • v.57 no.4
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    • pp.525-530
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    • 2019
  • The performance and stability of solid oxide fuel cells (SOFCs) depend on the microstructure of the electrode and electrolyte. In anode, porosity and pore distribution affect the active site and fuel gas transfer. In an electrolyte, density and thickness determine the ohmic resistance. To optimizing these conditions, using costly method cannot be a suitable research plan for aiming at commercialization. To solve these drawbacks, we made high performance unit cells with low cost and highly efficient ceramic processes. We selected the NiO-YSZ cermet that is a commercial anode material and used facile methods like die pressing and dip coating process. The porosity of anode was controlled by the amount of carbon black (CB) pore former from 10 wt% to 20 wt% and final sintering temperature from $1350^{\circ}C$ to $1450^{\circ}C$. To achieve a dense thin film electrolyte, the thickness and microstructure of electrolyte were controlled by changing the YSZ loading (vol%) of the slurry from 1 vol% to 5 vol. From results, we achieved the 40% porosity that is well known as an optimum value in Ni-YSZ anode, by adding 15wt% of CB and sintering at $1350^{\circ}C$. YSZ electrolyte thickness was controllable from $2{\mu}m$ to $28{\mu}m$ and dense microstructure is formed at 3vol% of YSZ loading via dip coating process. Finally, a unit cell composed of Ni-YSZ anode with 40% porosity, YSZ electrolyte with a $22{\mu}m$ thickness and LSM-YSZ cathode had a maximum power density of $1.426Wcm^{-2}$ at $800^{\circ}C$.

Electrochemical Properties and Adsorption Performance of Carbon Materials Derived from Coffee Grounds (커피찌꺼기로부터 얻어진 탄소 소재의 전기화학적 성질 및 흡착 성능)

  • Jin Ju Yoo;Nayeon Ko;Su Hyun Oh;Jeongyeon Oh;Mijung Kim;Jaeeun Lee;Taeshik Earmme;Joonwon Bae
    • Applied Chemistry for Engineering
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    • v.34 no.5
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    • pp.529-533
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    • 2023
  • The fundamental electrochemical properties and adsorption capabilities of the carbonized product derived from coffee grounds, a prevalent form of lignocellulose abundantly generated in our daily lives, have been extensively investigated. The structure and morphology of the resultant carbonized product, obtained through a carbonization process conducted at a relatively low temperature of 600 ℃, were meticulously examined using a scanning electron microscope. Raman spectroscopy measurements yielded a relative crystallinity (D/G ratio) of the carbon product of 0.64. Electrical measurements revealed a linear ohmic relationship within the carbonized product. Furthermore, the viability of utilizing this carbonized material as an anode in lithium-ion batteries was evaluated through half-cell charge/discharge experiments, demonstrating an initial specific capacity of 520 mAh/g. Additionally, the adsorption performance of the carbon material towards a representative dye molecule was assessed via UV spectroscopy analyses. Supplementary experiments corroborated the material's ability to adsorb a distinct model molecule characterized by differing surface polarity, achieved through surface modification. This article presents pivotal findings that hold substantial implications for forthcoming research endeavors centered around the recycling of lignocellulose waste.

Fabrication of a Thermopneumatic Valveless Micropump with Multi-Stacked PDMS Layers

  • Jeong, Ok-Chan;Jeong, Dae-Jung;Yang, Sang-Sik
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.4
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    • pp.137-141
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    • 2004
  • In this paper, a thermopneumatic PMDS (polydimethlysiloxane) micropump with nozzle/diffuser elements is presented. The micropump is composed of nozzle/diffuser elements as dynamic valves, an actuator consisting of a circular PDMS diaphragm and a Cr/Au heater on a glass substrate. Four PDMS layers are used for fabrication of an actuator chamber, actuator diaphragm by a spin coating process, spacer layer, and nozzle/diffuser by the SU-8 molding process. The radius and thickness of the actuator diaphragm is 2 mm and 30 ${\mu}{\textrm}{m}$, respectively. The length and the conical angle of the nozzle/diffuser elements are 3.5 mm and 20$^{\circ}$, respectively. The actuator diaphragm is driven by the air cavity pressure variation caused by ohmic heating and natural cooling. The flow rate of the micropump in the frequency domain is measured for various duty cycles of the square wave input voltage. When the square wave input voltage of 5 V DC is applied to the heater, the maximum flow rate of the micropump is 44.6 ${mu}ell$/min at 100 Hz with a duty ratio of 80% under the zero pressure difference.