• Journal of Magnetics
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• 제5권2호
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• pp.35-39
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• 2000

The correlation between the activation volumes of wall-motion and nucleation processes in Co/Pd multilayers has been investigated. Each activation volume was estimated from the field dependence of the wall-motion speed and the nucleation rate, respectively, based on time-resolved domain patterns grabbed by a MOKE microscope system. Both the activation volumes are changed in the same manner around $0.2\sim1.1\times10^{-17}cm^3$ with changes in the multilayered structure. Interestingly, the correlation between the activation volumes is sensitive to the multilayered structure; the wall-motion activation volume is smaller than the nucleation activation volume for a sample having a smaller number of repeats and a thinner Co-layer thickness, and vice versa. The correlation is closely related with the contrasting reversal modes; the process having the smaller activation volume dominates.

• 산업기술연구
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• 제29권B호
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• pp.115-119
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• 2009

Green fluorescent protein (GFPuv) was displayed on the surface of ethanol-producing bacteria Zymomonas mobilis using N-terminal domain of ice nucleation protein (INP) as an anchoring motif. To evaluate the ice nucleation protein as plausible anchor motif in Z. mobilis, GFPuv gene was subcloned into Zymomonas expression vector yielding pBBR1MCS-3/pPDC/INPN/GFPuv plasmid., INP-GFPuv fusion protein was expressed in Z. mobilis and its fluorescence was verified by confocal microscopy. The successful display of GFPuv on Zymomonas mobilis suggest that INP anchor motif could be used for future fusion partner in Z. mobilis strain improvement.

• 전자공학회논문지A
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• 제33A권2호
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• pp.122-130
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• 1996

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.

• Applied Microscopy
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• 제24권4호
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• pp.123-131
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• 1994

In this study the initial stage nucleation and growth of Ni silicide on (001) Si by evaporation and furnace annealing have been investigated by transmission electron microscopy. The pressure was $10^{-6}$ Torr during evaporation and annealing. And the annealing temperature to produce $NiSi_2\;was\;800^{\circ}C$. From the evaporated film, $NiSi_2$ nucleus has grown into Si substrate with an epitaxial orientation relationship. Interfaces between $NiSi_2$ and Si were A-type {111} interfaces and {100} $NiSi_2$ interfaces were also observed at the initial stage of nucleation. Ni silicide grew into Si substrate, but the nucleus partly grew into the evaporated film, with no facets, from the nuclei in the Si substrate. $NiSi_2$ nucleus with (111) habit planes was also observed.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.112-117
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• 2000

Nd:YAG laser of 355nm wavelength, which amounts to 3.5eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+. The pulse widths and frequency of the laser were 8ns and 10Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ fur 1h. Then, the LiAlSi3O8. crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment for crystallization in the glass.

• 소성∙가공
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• 제22권8호
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• pp.450-455
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• 2013

In the current study, a new dynamic recrystallization model for predicting high temperature flow stress is developed based on a physical model and the mean field theory. In the model, the grain aggregate is assumed as a representative volume element to describe dynamic recrystallization. The flow stress and microstructure during dynamic recrystallization were calculated using three sub-models for work hardening, for nucleation and for growth. In the case of work hardening, a single parameter dislocation density model was used to calculate change of dislocation density and stress in the grains. For modeling nucleation, the nucleation criterion developed was based on the grain boundary bulge mechanism and a constant nucleation rate was assumed. Conventional rate theory was used for describing growth. The flow stress behavior of pure copper was investigated using the model and compared with experimental findings. Simulated results by cellular automata were used for validating the model.

• 한국주조공학회지
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• 제26권1호
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• pp.27-33
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• 2006

Phase evolutions involving nucleation stages together with diffusional growth have been examined in order to provide a guideline for determining rate limiting stages during phase evolutions. In multiphase materials systems in coatings, composites or multilayered structures, diffusion treatments often result in the development of metastable/intermediate phases at the reaction interfaces. The development of metastable phases during solid state interdiffusion demonstrates that the nucleation reaction can be one controlling factor. Also, the concentration gradient and the relative magnitudes of the component diffusivities provide a basis for a phase selection and the application of a kinetic bias strategy in the phase selection. For multicomponent alloy systems, the identification of the operative diffusion pathway is central to control phase formation. Experimental access to the nucleation and growth stage is discussed in thin film multi layers and bulk samples.

• Journal of the Optical Society of Korea
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• 제9권2호
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• pp.74-78
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• 2005

With the fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field, the nucleation and dynamical behavior of defects is modeled. In order to model the defect, hormeotropic aligned liquid crystal cell with step inhomogeneous electrode which has a height of $1\;{\mu}m$ is used. From the simulation, we can observe the nucleation and line of the defect from surface inhomogeneity and the experiment is performed for confirmation. The experimental result is compared with numerical modeling in order to verify the simulation of the defect nucleation.

• 한국재료학회지
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• 제14권5호
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• pp.363-367
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• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• 한국정보통신학회논문지
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• 제9권8호
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• pp.1793-1798
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• 2005

액정 디스플레이 소자의 디렉터 내에서 결점을 모델링 할 수 있는 fast Q-텐서법을 이용하여 불균일한 표면에서 발생할 수 있는 결점의 발생과 움직임에 대한 모델링을 하였다. 결점을 모델링하기 위하여 $1{\mu}m$ 단차의 전극을 가진 수직배향셀을 이용하였다. 모델링을 통하여 단차에서 발생하는 액정 디렉터 내에서의 결점의 발생과 결점선을 확인할 수 있었으며 이러한 결과는 실험을 통하여 확인하였다.