• The Korean Journal of Ceramics
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• 제2권4호
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• pp.221-225
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• 1996

In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

• Journal of Electrochemical Science and Technology
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• 제4권3호
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• pp.93-101
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• 2013

The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• 한국세라믹학회지
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• 제41권6호
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• 한국세라믹학회지
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• 제18권3호
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• pp.163-170
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• 1981

The crystallization of $Li_2O-SiO_2$ system glasses and the effect of phase separtion to crystal nucleation were studied. The crystallization temperatures of various glasses were determined by DTA and glasses were nucleation heat treated at the temperatures ranging from 45$0^{\circ}C$ to 5$25^{\circ}C$. These glasses were thengown at $700^{\circ}C$ to observable size in the optical microscope. Crystal nucleation rates of various glasses were obtained by estimating the number of crystals per unit volume. The main crystal phase of these glasses identified by X-ray diffraction was lithium disilicate ($Li_2O$.$2SiO_2$). It was found that the crystal nucleation rate of glass (19.5% $Li_2P$-80.5% $SiO_2$), the nearest composition to lithium disilicate, was higher than other glasses. The opalescence caused by phase separation was observed in the nucleation heat treated glass (16.3% $Li_2O$-83.7% $SiO_2$). The result from nucleation density measurement of this glass indicated that the nucleation was enhanced during early stage of phase separation. The molphologies of crystals in glasses and crystal growth rate at $600^{\circ}C$ were also discussed.

• Fibers and Polymers
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• 제4권3호
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• pp.102-106
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• 2003

Crystallization behaviour of blends of different MFI isotactic polypropylenes (PP), and blends of PP with carbon nanofibre have been investigated by DSC and polarizing optical microscope. Both higher MFI PP component and the carbon nanofibre in the blend influence the nucleation activity of the melt during non-isothermal crystallization. In presence of carbon nanofibre, the sherulitic growth rate is highly disturbed. The calculation of nucleation activity indicates that carbon nanofibres act as active substrate for heterogeneous nucleation.

• Journal of Electrochemical Science and Technology
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• 제11권3호
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• 한국세라믹학회지
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• 제34권6호
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

• 한국주조공학회지
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• 제14권6호
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• pp.520-529
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• 1994

This study describes the influence of the trace amount of sulphur on the nucleation behavior of graphite crystals in high purity Fe-C-Si alloys prepared by levitation melting method. Detailed microstructural analyses of high purity(HP) and sulphur added(HP＋S) samples showed that the nucleation of graphite crystals was prevented by sulphur. With decreasing the sulphur content, the shape of graphite crystals tended to spherulitic, and below 2ppm S, that of graphite crystals was only nodular. The critical cooling rate for the nucleation of griphite crystals was calculated as $1.5{\times}10^3k/s$. It is obvious from this work that residual C-C clusters act as an effective nucleation site for graphite crystals and one of the important role of nodularizing elements is to act as scavenger which removes harmful impurities from the solution.

• 한국세라믹학회지
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• 제31권12호
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.