• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.10a
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• pp.341-346
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• 2002

The production part requiring multiple processes such as piecing, blanking and notching are performed with a high production rates in progressive die. In order to prevent the defects of process result, the optimum of strip process layout design, die design, die making, and tryout with inspection etc. are needed. According to these factors of die development process, they required theory and practice of metal working process and its background, die structure, machining conditions for die making, die materials, heat treatment of die components, know-how and so on. In this study, we designed and analyzed die components also simulated the strip process layout of multiple stage drawing by DEFORM. Especially the result of tryout and its analysis become to the feature of this study.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.5-9
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• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.

• Korean Journal of Cleft Lip And Palate
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• v.10 no.1
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• pp.23-32
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• 2007

The classic triad of diagnostic signs of submucosal cleft palate which may be present are: 1) bifid uvula 2) short palate with no muscle in the midline and 3) hard palate with a submucous notching defect in the posterior midline. The treatment of submucous cleft palate are V-Y push back palatorrhaphy, and superior based pharyngoplasty implant in the posterior pharynx. The best speech results were in those children operated upon in the younger age group (especially at or before 2 years of age), thus pointing up the importance of early diagnosis.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.112-117
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• 2004

본 연구에서는 쏠더를 이용한 새로운 웨이퍼 레벨 실장 기술을 제안하였고 순수 주석도금이 쏠더로서 이용되었다. 제안된 실장 기술의 가장 큰 차별성은 레고 조립처럼 어셈블리 한 후에 쏠더 리프로우를 통해 측면 접합한다는 것이다. 이런 측면 접합 기술은 기본적으로 표면 상태에 매우 둔감하다는 장점과 비아를 통한 전기적 연결 시 끝 단의 노칭(notching)에 의한 전기적 연결 끊김 문제를 해결할 수 있다. 접합강도는 전단 응력을 측정하여 평가하였고, 실장의 기밀성(Hermeticity)는 가압 헬륨 측정법을 통해서 평가되었다. 실험결과로부터 본 실장 기술은 고 수율 웨이퍼 레벨 실장 기술의 대안이며 실행 가능함을 확인할 수 있었다.

• Design & Manufacturing
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• v.12 no.3
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• pp.13-18
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• 2018

Flexible display tends to grow every year, It tends to be larger, slimmer, and higher in image quality. Therefore, accuracy is required in the manufacturing process of each part. In the curved monitor, the bottom chassis has a structure to which other parts can be attached. The accuracy of the curvature which the bottom chassis of the curve monitor monitors has is important. If the curvature error is large, serious defects such as cracks, warpage, twisting and the like occur. Curvature was analyzed using 3D scanner. In the Forming process and Restriking process steps, spring go occurred, and spring back occurred in the Notching process and Bending process steps. Even in the same process, it was confirmed that the curvature value varied depending on the formed shape.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.23 no.3
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• pp.263-269
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• 2001

Median cleft of the lower lip and/or mandible is a rare congenital anomaly, first mentioned by Couronne in 1819. Monroe(1966), Fujino(1970), Ranta(1984) and Oostrom(1996) conducted comprehensive reviews and list cases in literature. Median cleft varies greatly, from a simple vermilion notch to a complete cleft of the lip involving the tongue, the chin, the mandible, the supporting structures of the median of the neck, and the manubrium sterni. The associated anomalies include ankyloglossia, cleft tongue, neck contraction, heart lesion, absence of hyoid bone, and so on. The etiology of median cleft is unknown. Various possibilities, such as failure of mesodermal penetration into the midline, failure of fusion of mandibular processes, external factors apart from the embryogenic pattern such as pressure, position in utero, circulatory failure caused placental adhesion, diseases in pregnancy, and so on, have been discussed. A 8-year-old girl was referred to the Dept. of Oral & Maxillofacial Surgery, Kyungpook National University Hospital and had been aware of the fact that at birth "she had something wrong with her mouth." Shortly after birth she had been examined by a plastic surgeon and at that time surgical procedure had been performed to release the tongue from the lower jaw and lip at local hospital. On admission, she had a slight notching of lower lip and two fibrous frenum ran from the lip along the ventral surface of the tongue, diastema between her mandibular central incisors, and slightly constricted bifid mandible associated independent movement of the two halves of mandible. The patient had autogenous iliac bone graft to reconstruct the mandibular midline defect. The postoperative result was uneventful. In future, the correction of the soft tissue deformities such as notching of the lower lip and partial ankyloglossia will be required for the esthetic and functional improvement.

• Polymer(Korea)
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• v.36 no.1
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• pp.59-64
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• 2012

The impact strength of material is considered the most important design factor for small and light products. Impact strength is a unique material property, thus the impact strength should not depend upon the geometry of specimen. However it varies according to specimen thickness, notching method, and notch shape. In this study, the variations of impact strength have been investigated according to thickness, notch shape, and notching method of specimen. Engineering plastics such as PC, ABS and POM have been used in this study. Experimental results showed impact strength increased as thickness decreasesd. PC showed the highest increment of impact strength when the thickness was thin. Fractured section of PC showed brittle fracture behavior when the specimen was thick. However it showed ductile fracture behavior when it was thin. The impact strength of in-mold notched specimen showed higher than that of milling notched specimen. PC showed the highest notch sensitivity among the materials used in this experiment.

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.153-160
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• 2006

This paper presents a new compensating system, which consists of a shunt active filter and passive components for mitigating voltage and current disturbances arising from an Electric Arc Furnace (EAF). A novel control strategy is presented for the shunt active filter. An extended method based on instantaneous power theory in a rotating reference frame is developed for extraction of compensating signals. Since voltages at the point of common coupling contain low frequency interharmonics, conventional methods cannot be used for dc voltage regulation. Therefore, a new method is introduced for this purpose. The passive components limit the fast variations of load currents and mitigate voltage notching at the Point of Common Coupling (PCC). A three-phase electric arc furnace model is used to show power quality improvement through reactive power and harmonic compensation by a shunt active filter using the proposed control method. The system performance is investigated by simulation, which shows improvement in power quality indices such as flicker severity index.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.3
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• pp.75-80
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• 2008

The progressive die performs a work of sheet metal processes with a piercing, notching, embossing, bending, drawing, cut-off etc. in many kinds of pressing. Now a days, these processes have been evaluated as a advanced tooling method to increase the productivity and high quality assurance. The first step analyzing of die design is production part review, then the arrangement drawing of product design and strip process layout design should be done as a next steps with a FEM simulation for its problem solution. After upper procedure were peformed, it was started to make the die, then tryout and its revision of the die and product quality, safety, productivity etc. were done continually. For the all of these process, we mobilized the theory and practice of sheet metal forming, die structure, the function and activity of die components, and the others of die machining, die material, heat treatment and know‐how so on. In this study the features of representative are production part analyzing through the FEM simulation of bending area with a considering spring back problem by DEFORM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.