• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.9 s.240
• /
• pp.1169-1174
• /
• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.2 no.1
• /
• pp.53-58
• /
• 1998

Traffic nonuniformity degrades the performance of DCMA cellular systems. This paper presents a new algorithm called the Soft Handoff with Dynamic Thresholds (SHDT) which reduces the performance degeradation due traffic nonuniformity on CDMA systems. Unlike the conventional fixed handoff thresholds, algorithm allows the handoff thresholds (T_ADD and T_DROP) to vary dynamically according to the traffic density of each cell. This algerian has been implemented by means of computer simulation and the results show that SHDT improves the overall CDMA system performance in terms of outage probability. The SHDT algorithm can easily be applied to CDMA cellular systems without my modification.

• Tribology and Lubricants
• /
• v.38 no.4
• /
• pp.152-161
• /
• 2022

Chemical mechanical planarization (CMP) is a technology that planarizes the surfaces of semiconductor devices using chemical reaction and mechanical material removal, and it is an essential process in manufacturing highly integrated semiconductors. In the CMP process, a conditioning process using a diamond conditioner is applied to remove by-products generated during processing and ensure the surface roughness of the CMP pad. In previous studies, prediction of pad wear by CMP conditioning has depended on numerical analysis studies based on mathematical simulation. In this study, using an artificial neural network, the ratio of conditioner coverage to the distance between centers in the conditioning system is input, and the average conditioning density, standard deviation, nonuniformity (NU), and conditioning density distribution are trained as targets. The result of training seems to predict the target data well, although the average conditioning density, standard deviation, and NU in the contact area of wafer and pad and all areas of the pad have some errors. In addition, in the case of NU, the prediction calculated from the training results of the average conditioning density and standard deviation can reduce the error of training compared with the results predicted through training. The results of training on the conditioning density profile generally follow the target data well, confirming that the shape of the conditioning density profile can be predicted.

• Journal of Radiation Protection and Research
• /
• v.26 no.3
• /
• pp.271-273
• /
• 2001

In precise measurement of air kerma with cavity ionization chambers, the effect of wall attenuation and scatter are corrected by Kwall and that of nonuniformity by Knu. Using the EGS4 code, we calculated these two correction factors. Correction factors calculated for two different-sized cylindrical ionization chamber differ by up to 0.7% from those obtained by measurements.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2001.11a
• /
• pp.439-443
• /
• 2001

The steering wheel vibrations such as shimmy, brake judder and shake are affected by the vibration characters of steering and suspension. For the analysis of shimmy, nonuniformities of tire can be considered the major sources. This study investigates unbalances and uniformities of tire in which the lateral force variation is highly correlated with shimmy. The hardness of suspension bushes can be modified to change the dynamic behavior of suspension that is effective to reduce the sensitivity of shimmy.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2000.11a
• /
• pp.186-192
• /
• 2000

The heat generated in contact type braking system can cause an unacceptable braking performance. Thermal behavior of ventilated disk brake system is presented in this paper. The temperature and velocity fields of 3-D unsteady simulated model are obtained using a software package "FLUENT". The numerical results show that there exits a temperature nonuniformity between the disk faces contacting with pads. The conduction rate through the disk and pad is calculated and the effect of material conductivity is also investigated.estigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.3
• /
• pp.182-187
• /
• 2018

In this study, 20.8% of a p-type Si bifacial solar cell was used to develop a photovoltaic (PV) module to obtain the maximum power under a limited installation area. The transparent back sheet material was replaced during fabrication with a white one, which is opaque in commercial products. This is very beneficial for the generation of more electricity, owing to the additional power generation via absorption of light from the rear side. A new model is suggested herein to predict the power of the bifacial PV module by considering the backside reflections from the roof and/or environment. This model considers not only the frontside reflection, but also the nonuniformity of the backside light sources. Theoretical predictions were compared to experimental data to prove the validity of this model, the error range for which ranged from 0.32% to 8.49%. Especially, under $700W/m^2$, the error rate was as low as 2.25%. This work could provide theoretical and experimental bases for application to a distributed and microgrid network.

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.439-445
• /
• 2007

SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits. In this paper, we investigate the causes that generate the resistance nonuniformity after the silicon-based thin film resistor was fabricated, and consider the counter plan against that. Because the Ti-B precipitate, which formed during the silicide process of the SiGe thin film resistor, gives rise to the nonuniformity of SiGe resistors, the boron ions should be implanted as many as possible. In addition, the resistance deviation increases as the size of the contact hole that interconnects the SiGe resistor and the metal line decreases. Therefore, the size of the contact hole must be enlarged in order to reduce the resistance deviation.

• Korean Journal of Optics and Photonics
• /
• v.4 no.3
• /
• pp.266-275
• /
• 1993

We made $P_2O_5-SiO_2$ films on silicon for integrated optics application by low pressure chemical vapor deposition using TEOS (tetraethylorthosilicate) and TMPite (trimethylphosphite) and studied the deposition characteristics. The activation energy of the reaction was changed from 54.6 kcal/mole to 39.2 kcal/mole by incorporating the TMPite into the reaction of TEOS. The deposition rate and the P concentration of films increased in proportion to the flow of TMPite. As the deposition temperature increased, the deposition rate of the films increased but the P concentration decreased. The fabricated films showed the increase of refractive index of 0.0019 per 1 wt% of P concentration. The nonuniformity of films was ${\pm}$7% in thickness and ${\pm}$0.5wt% in P concentration and we showed this'nonuniformity is due to the nonuniform transport of TMPite. The films of more than 10wt% P concentration developed phosphoric acid on its surface when exposed to air for long time.

• ETRI Journal
• /
• v.25 no.6
• /
• pp.503-509
• /
• 2003

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.