• 대한기계학회논문집A
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• 제29권9호
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• pp.1169-1174
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

• 한국정보통신학회논문지
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• 제2권1호
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• pp.53-58
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• 1998

IS-95를 기본 규격으로 채택한 이동통신시스템에서, 트래픽이 각 셀마다 비균일하게 분포한 실제 시스템의 성능을 향상시키기 위한 하나의 방법으로서 새로운 소프트 핸드오프 알고리즘을 제안한다. 제안된 소프트 핸드오프 알고리즘은 소프트 핸드오프 Threshold값( 즉 T_ADD, TDROP)이 각 셀의 트래픽 조건에 따라 동적으로 변화된다. 각 셀의 트래픽 조건은 사용된 순방향 링크의 트래픽량에 의해서 결정된다. 또한 제안된 알고리즘의 성능을 평가하기 위하여, 동적으로 변화되는 Threshold값을 가지는 소프트 핸드오프 알고리즘을 적용한 시스템의 성능은 고정된 Threshold값을 갖는 전통적인 소프트 핸드오프 알고리즘을 적용한 시스템의 성능보다 우수하다는 것이 시뮬레이션 결과에 의해서 보여준다.

• Tribology and Lubricants
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• 제38권4호
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• pp.152-161
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• 2022

Chemical mechanical planarization (CMP) is a technology that planarizes the surfaces of semiconductor devices using chemical reaction and mechanical material removal, and it is an essential process in manufacturing highly integrated semiconductors. In the CMP process, a conditioning process using a diamond conditioner is applied to remove by-products generated during processing and ensure the surface roughness of the CMP pad. In previous studies, prediction of pad wear by CMP conditioning has depended on numerical analysis studies based on mathematical simulation. In this study, using an artificial neural network, the ratio of conditioner coverage to the distance between centers in the conditioning system is input, and the average conditioning density, standard deviation, nonuniformity (NU), and conditioning density distribution are trained as targets. The result of training seems to predict the target data well, although the average conditioning density, standard deviation, and NU in the contact area of wafer and pad and all areas of the pad have some errors. In addition, in the case of NU, the prediction calculated from the training results of the average conditioning density and standard deviation can reduce the error of training compared with the results predicted through training. The results of training on the conditioning density profile generally follow the target data well, confirming that the shape of the conditioning density profile can be predicted.

• Journal of Radiation Protection and Research
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• 제26권3호
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• pp.271-273
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• 2001

In precise measurement of air kerma with cavity ionization chambers, the effect of wall attenuation and scatter are corrected by Kwall and that of nonuniformity by Knu. Using the EGS4 code, we calculated these two correction factors. Correction factors calculated for two different-sized cylindrical ionization chamber differ by up to 0.7% from those obtained by measurements.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2001년도 추계학술대회논문집 I
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• pp.439-443
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• 2001

The steering wheel vibrations such as shimmy, brake judder and shake are affected by the vibration characters of steering and suspension. For the analysis of shimmy, nonuniformities of tire can be considered the major sources. This study investigates unbalances and uniformities of tire in which the lateral force variation is highly correlated with shimmy. The hardness of suspension bushes can be modified to change the dynamic behavior of suspension that is effective to reduce the sensitivity of shimmy.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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• pp.186-192
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• 2000

The heat generated in contact type braking system can cause an unacceptable braking performance. Thermal behavior of ventilated disk brake system is presented in this paper. The temperature and velocity fields of 3-D unsteady simulated model are obtained using a software package "FLUENT". The numerical results show that there exits a temperature nonuniformity between the disk faces contacting with pads. The conduction rate through the disk and pad is calculated and the effect of material conductivity is also investigated.estigated.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.182-187
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• 2018

In this study, 20.8% of a p-type Si bifacial solar cell was used to develop a photovoltaic (PV) module to obtain the maximum power under a limited installation area. The transparent back sheet material was replaced during fabrication with a white one, which is opaque in commercial products. This is very beneficial for the generation of more electricity, owing to the additional power generation via absorption of light from the rear side. A new model is suggested herein to predict the power of the bifacial PV module by considering the backside reflections from the roof and/or environment. This model considers not only the frontside reflection, but also the nonuniformity of the backside light sources. Theoretical predictions were compared to experimental data to prove the validity of this model, the error range for which ranged from 0.32% to 8.49%. Especially, under $700W/m^2$, the error rate was as low as 2.25%. This work could provide theoretical and experimental bases for application to a distributed and microgrid network.

• 한국진공학회지
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• 제16권6호
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• pp.439-445
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• 2007

RF 및 고속 아날로그 특성 및 제조 공정의 용이성에 의하여 고속 유무선통신 및 초고주파 분야에서 많이 이용되고 있는 SiGe 집적회로에서, SiGe 박막 저항기의편차를 줄여 집적회로의 신뢰성을 높이는 것이 중요하다. 본 논문에서는 실리콘계 박막 저항기 제조 후 발생하는 불균일한 저항 값 분포의 원인 규명과 그 해결 방안에 대하여 고찰한다. SiGe 박막 저항기의 실리사이드가 존재하는 컨택 영역에서 Ti-B석출물의 영향으로 인하여 저항 값의 불균일성 발생하는데, 이를 최소화하기 위하여는 가능한 최대의 boron 이온을 주입할 필요가 있다. SiGe 저항기와 금속을 배선하기 위한 컨택 홀의 크기가 작을수록 SiGe 층 내에서 돌출부가 컨택 홀의 전체면적을 차지하게 될 확률이 커지게 되어 접촉저항이 비정상적으로 커질 확률 또한 높아지게 되므로, 돌출부가 생성되는 SiGe 저항기의 경우는 컨택 홀의 면적을 크게하여 SiGe 저항기의 편차를 개선하였다.

• 한국광학회지
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• 제4권3호
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• pp.266-275
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• 1993

Si 기판 위에 low pressure chemical vapor deposition 방법에 의해 TEOS (tetraethylorthosilicate)와 TMPite (trimethylphosphite)를 재료로하여 집적광학용 $P_2O_5-SiO_2$ 박막을 만들고 그 특성을 조사하였다. TEOS의 반응에 TMPite가 참여함으로서 반응활성화에너지는 54.6 kcal/mole에서 39.2 kcal/mole로 크게 낮아졌으며 박막의 증착속도와 P 농도는 TMPite의 유량에 비례하여 증가하였다. 또한 증착온도가 높을스록 박막의 증착속도는 증가하나 P 농도는 감소하였다. 제작된 박막의 굴절률은 P 농도 1wt% 당 0.0019로 P 농도에 비례하여 증가하였다. 측정된 박막 불균일도는 두께 ${\pm}$7% 및 P 농도 ${\pm}$0.5wt% 정도로서 이러한 불균일성은 주로 TMPite의 불균일한 수송에 기인함을 보였다. 또한 P 농도가 10wt% 이상인 박막을 대기중에 장시간 노출하면 표면에 인산이 석출됨을 확인하였다.

• ETRI Journal
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• 제25권6호
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• pp.503-509
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• 2003

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.