• Journal of Powder Materials
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• v.9 no.4
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• pp.203-210
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• 2002

A new PIM in-process joining technique has been developed for more complicated and functional PIM components by application of the exuded wax from the green compacts during solvent debinding step. At first, various stainless steels and iron compacts with rectangular shape were combined, and the joining behaviors and properties were investigated by shear and tensile test, and microscopic observation. Subsequently, perfect joined three pieces of thin and hollow compacts were obtained for the combination of same and different stainless steels, and it was difficult to join the iron and stainless steel compacts in hydrogen atmosphere because of the different starting temperature of shrinkage. However, pretty good joined iron and stainless steel compacts were obtained by consideration of particle size and vacuum atmosphere. Finally, for the combination of ferro-silicon and austenitic stainless steel compacts, high functionality (magnetic (1.60Tes1a) & non-magnetic) and perfect joint were obtained.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.24-30
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• 2006

Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of $8.45\times10^{-8}cm^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.277.2-277.2
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• 2013

Petri dishes and glass slides have been widely used as general substrates for in vitro mammalian cell cultures due to their culture viability, optical transparency, experimental convenience, and relatively low cost. Despite the aforementioned benefit, however, the flat two-dimensional substrates exhibit limited capability in terms of realistically mimicking cellular polarization, intercellular interaction, and differentiation in the non-physiological culture environment. Here, we report a protocol of culturing embryonic rat hippocampal neurons on the electro-spun polymeric network and the results from examination of neuronal cell behavior and network formation on this culture platform. A combinatorial method of laser-scanning confocal fluorescence microscopy and live-cell imaging technique was employed to track axonal outgrowth and synaptic connectivity of the neuronal cells deposited on this model culture environment. The present microfiber-based scaffold supports the prolonged viability of three-dimensionally-formed neuronal networks and their microscopic geometric parameters (i.e., microfiber diameter) strongly influence the axonal outgrowth and synaptic connection pattern. These results implies that electro-spun fiber scaffolds with fine control over surface chemistry and nano/microscopic geometry may be used as an economic and general platform for three-dimensional mammalian culture systems, particularly, neuronal lineage and other network forming cell lines.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.4
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• pp.191-196
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• 2003

For improvement of the wear performance of Ti alloy, vacuum-carburizing technique was tried for the first time using propane atmosphere. During the low pressure carburizing carbide was formed at the surface and carbon transfer was occurred from the carbide to the matrix. It was found that: (i) surface hardness increased with the reduction of operating pressure and time; (ii) optimum hardness distribution could be obtained with the proper choice of temperature and carbon flux control; and, (iii) case depth was largely influenced not by time but by temperature. The two steps process was recommended for obtaining thick case depth and high surface hardness of Ti alloy. For the low oxygen partial pressure, it was necessary to introduce additional CO gas to the atmosphere.Grain boundary oxidation and non-uniformity could be prevented.

• Journal of Radiation Industry
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• v.4 no.3
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• pp.265-269
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• 2010

Silicon-based non-oxide ceramic carbide fiber is one of the leading candidate ceramic materials for engineering applications because of its excellent mechanical properties at high temperature and good chemical resistance. In this study, polycarbosilane(PCS) and zirconium butoxide were used as a precursor to prepare polyzirconocarbosilane (PZC) fibers. A polymer solution was prepared by dissolving PCS in zirconium butoxide (50/50 wt%). This solution was heated at $250^{\circ}C$ in a nitrogen atmosphere for 2 hour with stirring, and then dried in a vacuum oven for 48 hour. PZC fibers were fabricated using an electrospinning technique. The fibers were irradiated with an electron beam to induce structural crosslinking. Crosslinked PZC fibers were heat treated at $1,300^{\circ}C$ in a nitrogen atmosphere. The microstructures of PZC fibers were examined by SEM. Chemical structures of PZC fibers were examined by FT-IR and XRD. Thermal stability of PZC fibers was investigated by TGA.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.8
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• pp.60-66
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• 2019

This study aims to develop and manufacture a device for inspecting impurities in a sealed aluminum container using an X-ray technique. Two X-ray oscillators and detectors are used to detect the entire sample. The stage for sample movement was fabricated using two high-voltage generators and X-ray detectors arranged diagonally. In addition, the high-voltage generator is composed of a vacuum tube, a high-voltage generator, and circulating oil for cooling. It includes a control unit for controlling other equipment, a power supply unit, and a video output unit; the most important part of the X-ray is the X-ray generation part. In this study, a flat panel was used along with the aim of developing the detector part. In particular, the development of the scintillator introduced in this study is a primary focus. The developed scintillator can be combined with a lens and can then be assembled with a charge coupled device (CCD) sensor.