• Title/Summary/Keyword: non-vacuum

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CAN THE UNIVERSE BE "TILTED"?

  • La, Daile
    • Publications of The Korean Astronomical Society
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    • v.7 no.1
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    • pp.19-23
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    • 1992
  • We investigated the "tilting" of the Universe, i.e., a non-Doppler origin of the dipole moment of the cosmic background radiation (CBR). Superhorizon-sized isocurvature, rotational and true vacuum bubble perturbations are considered. We show that the more natural way of the "tilting" the Universe is via the true vacuum bubble perturbation. Nevertheless, due to the small filling fraction of the bubbles of viable extended inflationary models, we find that the probability of the real occurrence in the Universe is quite insignificant.

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마이크로파 플라즈마 CVD법에 의해 작성된 DLC 박막 진공속에서의 거동과 증착조건의 영향

  • 일본명
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2001.06a
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    • pp.327-333
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    • 2001
  • DLC films due to their extreme properties have attracted a lot of attention. In this study, the films were prepared on High Speed Steel (SKH2) by microwave plasma assisted CVD method using CH4. Every friction test under the normal load 2,5N and sliding velocity of 20,25mm/s in high vacuum (5${\times}$10$\^$-5/ Torr). The films were analyzed with Raman spectroscopy. The films failed immediately in vacuum due to high friction. Wear volume of DLC coated disks decreased more than that of non-DLC coated disks. Also, hardness of the films is about 600HV.

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Non volatile memory TFT using mobile proton in gate dielectric by hydrogen neutral beam treatment

  • Yun, JangWon;Jang, Jin Nyoung;Hong, MunPyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.231-232
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    • 2016
  • We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

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Temperature-dependent tendency of target DNA translocation through a nanocapillary functionalized with probe DNA

  • Lee, Choongman;Youn, Yeoan;Kim, Joo Hyung;Yoo, Kyung-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.140.1-140.1
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    • 2016
  • We have measured DNA translocation through a nanocapillary functionalized with probe DNA. These DNA-functionalized nanocapillaries selectively facilitate the translocation of target ssDNAs that are complementary to the probe ssDNAs. In addition, translocation of the complementary target ssDNA exhibits two tendencies to translocation speed, such as fast and slow translocation, whereas that of non-complementary target ssDNA yields only one tendency, fast translocation. These observations suggest that the complementary and non-complementary target ssDNAs may be discriminated due to different interaction strengths between target and probe ssDNAs. The temperature dependence measurements of DNA translocation show that slow translocation events are ascribed to the complementary interaction between probe and target ssDNA. This confirms that their dwell time is dependent on the base-pair binding strength. These results demonstrate that mere single-base different target DNA can be selectively detectable by using the probe DNA-functionalized nanocapillaries.

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Non volatile memory device using mobile proton in gate insulator by hydrogen neutral beam treatment

  • Yun, Jang-Won;Jang, Jin-Nyeong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.192.1-192.1
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    • 2015
  • We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

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Interactions of non-thermal bioplasma with cancer, and immune cells

  • Kaushik, Nagendra Kumar;Kaushik, Neha;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.66.2-66.2
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    • 2015
  • There is the urgent need of new human health care's technology against cancers or tumors based on plasma electronics, medicine and biology. Main target of our study is to enhance efficacy and selectivity of plasma on cancer cells with metabolic modifiers and by inducing immune-modulations. We have evaluated the combination effect of plasma with metabolic modifiers (2-DG) on various solid and liquid cancers. Our findings suggest that 2-DG enhances the efficacy and selectivity of plasma and induces apoptosis in blood cancer cells through glucose deprivation. Finally, we conclude that 2-DG with non-thermal plasma may be used as a combination treatment against cancer cells. Our work also comprises plasma induced activation of immune cells; which find applications for curing various kinds of resistant tumors and other dreadful diseases. Plasma significantly activates immune cells which increases cell death in solid tumors in co-culture conditions.

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Fabrication of CIS absorber layer by non-vacuum precursor solution coating technique (용액 코팅법에 의해 제조된 저가형 CIS박막의 특성연구)

  • Kim, Chae-Woong;Ahn, Se-Jin;Yun, Jae-Ho;Lee, Jeong-Chul;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.313-316
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    • 2007
  • 본 연구에서는 Cu와 In 성분을 포함하는 메탄올 용액을 닥터 블레이딩 방법으로 코팅한 후 이를 Se Evaporator 열처리하여 CIS 광흡수층을 제조하였다. $Cu(NO_{3})_{2}$, $INCl_{3}$ 를 출발 물질로 선정하고, 이를 메탄올 용매에 녹여 전구체 용액을 만든 후, 여기에 유기물 바인더 물질을 첨가하여 닥터 블레이드 코팅에 적합한 점도를 맞춘 후, 이를 Mo/glass 기판에 코팅하였다. 코팅된 Cu, In 함유 유기물 혼합체를 공기중에서 1차 열처리 한 후 Evaporator 를 이용해 Selenization 하여 태양전지용 CIS 광흡수층을 만들었다. 본 연구에서는 전구체 합성, 유기물 첨가, 공기중 열처리 및 Se 열처리 각 단계에서 광흡수층 막의 형상, 결정구조, 화학조성의 변화과정을 분석하여 CIS 박막의 형성 과정을 고찰하였다. 특히 Se 증발 온도가 CIS막의 특성과 조성에 미치는 영향을 분석하여, 최적의 셀렌화 조건을 도출하고자 하였다.

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Fabrication of CIS absorber layer by non-vacuum precursor solution coating technique (비진공 전구체 용액 코팅에 의한 CIS 광흡수층 제조)

  • Kim, Chae-Woong;Ahn, Se-Jin;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.11a
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    • pp.570-572
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    • 2006
  • 본 연구에서는 Cu와 In 성분을 포함하는 메탄을 용액을 닥터 블레이딩 방법으로 코팅한 후 이를 Se 분위기에서 열처리하여 CIS 광흡순층을 제조하였다 $Cu(NO_3)_2,\;InCl_3$를 출발 물질로 선정하고, 이를 메탄을 용매에 녹여 전구체 용액을 만든 후 여기에 유기물 바인더 물질을 첨가하여 닥터 블레이드 코팅에 적합한 점도를 맞춘 후. 이를 Mo/glass 기판에 코팅하였다. 코팅된 Cu, In 함유 유기물 혼합체를 공기중에서 1차 열처리 후 Se 분위기에서 열처리하면 태양전지용 CIS 광흡수층을 얻게 된다 특히 본 연구에서는 전구체 합성, 유기물 첨가, 공기중 열처리 및 Se 열처리 각 단계에서 광흡수층 막의 형상, 결정구조, 화학조성의 변화과정을 분석하여 CIS 박막의 형성 과정을 고찰하였다.

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