• Bulletin of the Korean Mathematical Society
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• v.50 no.4
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• pp.1201-1207
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• 2013

Let N be a complete Riemannian manifold with nonnegative Ricci curvature and let M be a complete noncompact oriented stable minimal hypersurface in N. We prove that if M has at least two ends and ${\int}_M{\mid}A{\mid}^2\;dv={\infty}$, then M admits a nonconstant harmonic function with finite Dirichlet integral, where A is the second fundamental form of M. We also show that the space of $L^2$ harmonic 1-forms on such a stable minimal hypersurface is not trivial. Our result is a generalization of one of main results in [12] because if N has nonnegative sectional curvature, then M admits no nonconstant harmonic functions with finite Dirichlet integral. And our result recovers a main theorem in [3] as a corollary.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.