• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.359-360
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• 2013

The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.171-171
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• 2010

In this work, we investigated the effect of the oxidation temperature on the unipolar and bipolar resistance switching behaviors of the oxidized TiO-x films. TiOx films on Pt electrodes were fabricated by the oxidation of Ti films at $550^{\circ}C$ for 1 to 3 hours. The unipolar and bipolar resistance switching properties were investigated with the oxidation temperature and time. Also, the crystal structure and the physical properties such as chemical bonding states of TiOx layers were characterized in addition to the resistance switching characteristics. The resistance switching behaviors of TiOx films oxidized at above $450^{\circ}C$ and below $650^{\circ}C$ was shown. So, we investigated that the resistance switching behaviors of TiOx films oxidized at $550^{\circ}C$ with the oxidation time from 1 to 3 hour. The memory windows of unipolar switching in the oxidized TiOx films were reduced with increasing the oxidation time, but those of the bipolar switching were slightly enlarged. The enlargement of rutile TiO2 peak with increasing the oxidation time and temperature was studied by X-ray diffraction. An increase of non-lattice oxygen and Ti3+ in the TiOx films with the oxidation times was investigated by X-ray photoemission spectroscopy. It was expected that the uipolar and bipolar resistive switching of the oxidized TiOx film was strongly related with the migration of non-lattice oxygen anions and schottky barrier height, respectively.

• 한국초전도ㆍ저온공학회논문지
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• 제20권2호
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• pp.24-28
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• 2018

To understand the effects of Cd substitution for Cu, $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ (x = 0 ~ 0.5) compounds were synthesized and the structural and superconducting properties of the compounds were characterized. Resistivity data revealed that superconducting transition temperature rises initially up to x = 0.25 and then decreases as the Cd doping content increases. Room-temperature thermoelectric power decreases at first up to x = 0.25 and then increases with higher Cd doping content, indicating that the change in $T_c$ is mainly caused by the change in the hole concentration on the superconducting planes by the Cd doping. The non-monotonic dependence of the lattice parameters and the transition temperature with Cd doping content is discussed in connection with the possible formation of $Pb^{+2}$ ions and the removal of excess oxygen caused by Cd substitution in the charge reservoir layer. A correlation between transition temperature and c/a lattice parameter ratio was observed for the $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.218-218
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• 2012

Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 열처리공학회지
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• 제35권5호
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• pp.239-245
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• 2022

The purpose of this study is to evaluate the degree of microstructural change of materials using ultrasonic nonlinear parameters. For microstructure change, isothermal heat-treated ferritic 2.25Cr steel and low-cycle fatigue-damage copper alloy were prepared. The variation in ultrasonic nonlinearity was analyzed and evaluated through changes in hardness, ductile-brittle transition temperature, electron microscopy, and X-ray diffraction tests. Ultrasonic nonlinearity of 2.25Cr steel increased rapidly during the first 1,000 hours of deterioration and then gradually increased thereafter. The variation in non-linear parameters was shown to be coarsening of carbides and an increase in the volume fraction of stable M6C carbides during heat treatment. Due to the low-cycle fatigue deformation of oxygen-free copper, the dislocation that causes lattice deformation developed in the material, distorting the propagating ultrasonic waves, and causing an increase in the ultrasonic nonlinear parameters.

• Carbon letters
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• 제17권1호
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• pp.53-64
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• 2016

Nitrogen (N)-doped ordered mesoporous carbons (OMCs) with a dual transition metal system were synthesized as non-Pt catalysts for the ORR. The highly nitrogen doped OMCs were prepared by the precursor of ionic liquid (3-methyl-1-butylpyridine dicyanamide) for N/C species and a mesoporous silica template for the physical structure. Mostly, N-doped carbons are promoted by a single transition metal to improve catalytic activity for ORR in PEMFCs. In this study, our N-doped mesoporous carbons were promoted by the dual transition metals of iron and cobalt (Fe, Co), which were incorporated into the N-doped carbons lattice by subsequently heat treatments. All the prepared carbons were characterized by via transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). To evaluate the activities of synthesized doped carbons, linear sweep was recorded in an acidic solution to compare the ORR catalytic activities values for the use in the PEMFC system. The dual transition metal promotion improved the ORR activity compared with the single transition metal promotion, due to the increase in the quaternary nitrogen species from the structural change by the dual metals. The effect of different ratio of the dual metals into the N doped carbon were examined to evaluate the activities of the oxygen reduction reaction.

• 한국응용과학기술학회지
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• 제33권2호
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• pp.401-410
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• 2016

금속 산화물과 혼합한 $Pt-Sn/Al_2O_3$ 촉매의 프로판 탈수소 반응 성능의 향상 가능성에 대해서 연구하였다. 금속 산화물로서 $Cu-Mn/{\gamma}-Al_2O_3$, $Ni-Mn/{\gamma}-Al_2O_3$, $Cu/{\alpha}-Al_2O_3$를 제조하여 $Pt-Sn/Al_2O_3$ 촉매와 혼합하고, 프로판 탈수소 반응 성능을 측정하였다. 이 결과들을 불활성 물질인 glass bead를 혼합한 $Pt-Sn/Al_2O_3$ 촉매를 기준샘플로 삼아 비교하였다. 촉매와 금속산화물을 환원처리하지 않고 반응 실험한 경우, $576.5^{\circ}C$에서 기준샘플의 전환율 8% 대비, $Cu-Mn/{\gamma}-Al_2O_3$를 혼합한 $Pt-Sn/Al_2O_3$ 촉매가 14.9%의 높은 전환율과 96.8%의 선택도를 보였다. 촉매와 금속산화물을 환원 처리하여 반응활성을 측정한 경우, $Cu/{\alpha}-Al_2O_3$과 $Pt-Sn/Al_2O_3$의 혼합촉매가 기준샘플대비 초기에 높은 수율을 보였다. 그러나, 촉매를 환원 처리한 경우 전반적으로 전환율 상승이 크지 않았고, 이것으로 $Cu-Mn/{\gamma}-Al_2O_3$의 격자산소가 탈수소반응의 전환율 증가 영향을 주었음을 알 수 있었다.

• 청정기술
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• 제23권1호
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• pp.64-72
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• 2017

본 연구에서는, $150{\sim}400^{\circ}C$ 영역에서 $NO_x$를 제어하기 위한 ball mill 기법을 사용한 선택적 환원촉매(SCR)의 연구를 수행하였다. 제조된 촉매들의 구조적 특성 및 산화가 특성을 확인하기 위하여 XRD, BET, XPS 분석을 수행하였다. 다양한 ball mill 기법에 의해 제조된 촉매는 $250^{\circ}C$ 이하의 온도구간에서의 활성의 차이를 보였다. 이중 가장 우수한 탈질효율을 갖는 촉매를 기준으로, ball mill 시간이 3시간일 때 가장 높은 활성을 나타내었다. XPS 분석 결과, vanadium의 비 화학양론종의 존재 및 원자 수 증가가 활성증진에 유리하게 작용한 것으로 나타났다. 또한 $O_2$ on-off 실험을 통해 격자산소량의 양과 탈질 효율과의 상관관계를 나타내었고, 이는 서로 비례관계에 있음을 확인하였다.