• 제목/요약/키워드: nitrogen plasma

검색결과 638건 처리시간 0.027초

Study on the Adhesive Properties of Polyesters Reinforcing Materials

  • Krump, H.;Hudec, I.;Cernak, M.;Janypka, P.
    • Elastomers and Composites
    • /
    • 제37권3호
    • /
    • pp.192-194
    • /
    • 2002
  • Polyester cord yarns have been treated in an atmospheric-pressure nitrogen plasma reactor in order to enhance their adhesion to rubber. A thin layer or the plasma was generated in the close vicinity of the yam surface using various types or surface discharge. To assess the effect of the plasma treatment on fiber surface properties, the cord thread/rubber matrix adhesion values measured using the untreated and threads cord threads were compared. The static and dynamic adhesion of the cord thread to rubber was characterized by using the standard Henley test. The dynamic adhesion values for the reference and plasma treated fiber were $7,3{\pm}1,2\;N$ and $83,5{\pm}3,5\;N$. The surface properties were investigated by scanning electron microscopy, infrared spectroscopy and electron spin resonance spectroscopy. It is concluded that both polar group interactions and increased surface area of the fibers are responsible for the improved adhesive strength.

펄스직류방전과 유도결합방전의 복합에 의한 SCM440강의 이온질화 (Ion Nitriding Using Pulsed D.C Glow Discharge Combined with Inductively Coupled Plasma)

  • 김윤기
    • 한국표면공학회지
    • /
    • 제43권2호
    • /
    • pp.91-96
    • /
    • 2010
  • SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

  • Song, Hohyun;Seo, Sanghun;Chang, Hongyoung
    • Current Applied Physics
    • /
    • 제18권11호
    • /
    • pp.1436-1440
    • /
    • 2018
  • SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

질소 플라즈마처리에 의한 a-C 박막의 전계방출특성 변화에 관한 연구 (Study on Properties Change of a-C Thin Film by N2 Plasma Treatment)

  • 류정탁
    • 한국전기전자재료학회논문지
    • /
    • 제17권12호
    • /
    • pp.1332-1336
    • /
    • 2004
  • Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

Duplex Surface Treatments of Plasma Nitrocarburizing and Plasma Oxidation of SKD 11 Steel

  • Lee, In-Sup;Jeong, Kwang-Ho;Cho, Young-Rae
    • 한국표면공학회지
    • /
    • 제40권6호
    • /
    • pp.250-253
    • /
    • 2007
  • Plasma nitrocarburizing and plasma oxidizing treatments were performed to improve the wear and corrosion resistance of SKD 11 steel. Plasma nitrocarburizing was conducted for 12 h at $520^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the $\varepsilon-Fe_{2-3}(N,C)$ phase. It was found that the compound layer produced by plasma nitrocarburising was predominantly composed of $\varepsilon-phase$, with a small proportion of $\gamma'-Fe_4(N,C)$ phase. The thickness of the compound layer was about $5{\mu}m$ and the diffusion layer was about $150{\mu}m$ in thickness, respectively. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the compound layer was obtained by plasma post oxidation. It was confirmed that the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer.

Nitrogen-Doping of Nano-Thin Exfoliated (NTE) Graphite by RF Thermal Plasma with NH3

  • 이규항;신명선;최선용;조광섭;김성인
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.233.1-233.1
    • /
    • 2016
  • 화학적 방법에 의한 NTE graphite의 박리 또는 전도도 개선을 위한 도핑공정을 수행할 경우, 결함 및 불순물 생성에 의해 재결정화 공정 및 순도 개선을 위한 별도의 공정을 필요로한다. 본 연구에서는 건식 방법으로써 10,000K 이상의 초고온 RF 열플라즈마를 이용하여 in-situ 방법으로 흑연의 박리, 결함 제거, 결정성 향상 및 도핑 공정을 수행하고, 도핑특성을 평가하였다. 질소 도핑을 위하여 암모니아 가스를 첨가하여 NTE graphite를 도핑 처리하였으며, 시뮬레이션을 통하여 반응기 내부의 온도분포를 파악하고, 도핑을 위한 암모니아가스가 분해되어 도핑공정이 수행될 수 있는 투입위치를 결정하였다. 질소 도핑율은 암모니아 가스의 주입위치에서의 온도 및 가스 주입 유량 등의 공정조건에 따라 변화됨을 확인하였고, XPS 분석결과 최대 14.87 atomic%의 도핑율의 결과를 얻었다.

  • PDF

Dielectric barrier discharge 플라즈마 펄스 레이져 증착법을 통해 성장한 nitrogen 도핑 된 산화아연 박막의 광학적 특성 (Optical properties of nitrogen doped ZnO thin films grown by dielectric barrier discharge plasma-assisted pulsed laser deposition)

  • 이득희;김상식;이상렬
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2009년도 제40회 하계학술대회
    • /
    • pp.1256_1257
    • /
    • 2009
  • We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

  • PDF

Effects of Transverse Magnetic Field on Laser-produced Carbon Plasma Plume in Nitrogen Atmosphere

  • Nam, Sang-Hwan;Ko, Min-Jung;Lee, Mi-Ae;Park, Hye-Sun;Song, Jae-Kyu;Park, Seung-Min
    • Bulletin of the Korean Chemical Society
    • /
    • 제28권5호
    • /
    • pp.767-771
    • /
    • 2007
  • By adopting a time-resolved optical emission spectrometry, we have investigated the effects of transverse magnetic field on C2 and CN molecules produced by laser ablation of a graphite target in nitrogen atmosphere. We found that the spectroscopic temperatures of both species, obtained via simulation of the optical emission spectra, as well as their emission intensities from the electronically excited states increased significantly in the presence of a magnetic field. The cyclotron radii and frequencies for electrons and ions were estimated to explain the increase in the number of collisions in the laser-produced carbon plasma plume under a magnetic field.

다공성 Ni 금속 지지체를 사용한 Pd-Ni 합금 수소 분리막 연구 (A Study on the Pd-Ni Alloy Hydrogen Membrane using the Porous Nickel Metal Support)

  • 김동원;엄기연;김상호;박종수
    • 한국표면공학회지
    • /
    • 제37권5호
    • /
    • pp.289-295
    • /
    • 2004
  • A dense palladium-nikel (Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support mixed with submicron/micron nickel powder instead of mesoporous stainless steel support. Plasma treatment process is introduced as pre-treatment process instead of HCI activation. Pd-Ni alloy composite membrane prepared by electro plating was fairly a uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature 773 K and pressure 2.2 psi. The results showed that hydrogen ($H_2$) permeance was 27 ml/$\textrm{cm}^2$ㆍatmㆍmin and hydrogen/ nitrogen ($_H2$$N_2$) selectivity was 8 at 773 K.

Effect of Substrate Bias Voltage on the Properties of Hafnium Nitride Films Deposited by Radio Frequency Magnetron Sputtering Assisted by Inductive Coupled Nitrogen Plasma

  • Heo, Sung-Bo;Lee, Hak-Min;Kim, Dae-Il;Choi, Dae-Han;Lee, Byung-Hoon;Kim, Min-Gyu;Lee, Jin-Hee
    • Transactions on Electrical and Electronic Materials
    • /
    • 제12권5호
    • /
    • pp.209-212
    • /
    • 2011
  • Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.