• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.47-52
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• 2017

This research scrutinizes the data retention characteristics of the MLC NAND Flash Memory instigated by the loss effect of trapped charge when the memory is in the state of program saturation. It is attributed to the threshold voltage saturation phenomenon which engenders an interruption to the linear increase of the voltage in the memory cell. This phenomenon is occasioned by the outflow of the trapped charge from the floating gate to the control gate, which has been programmed by the ISPP (Incremental Step Pulse Programming), via Inter-Poly Dielectric (IPD). This study stipulates the significant degradation of thermal retention characteristics of threshold voltage in the saturation region in contrast to the ones in the linear region. Thus the current study evaluates the data retention characteristics of voltage after the program with a repeated reading test in various measurement conditions. The loss effect of trapped charge is found in the IPD layer located between the floating gate and the control gate especially in the nitride layer of the IPD. After the thermal stress, the trapped charge is de-trapped and displays the impediment of the characteristic of reliability. To increase the threshold saturation voltage in the NAND Flash Memory, the storage ability of the charge in the floating gate must be enhanced with a well-thought-out designing of the module in the IPD layer.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.32-35
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• 2000

Oxide-nitride-oxide(ONO) structures were formed by sequential radio frequency reactive magnetron sputtering method. The chemical composition and structure of these films were studied by using of secondary ion mass spectroscopy(SIMS) and Auger electron spectroscopy(AES) SIMS and AES experiments show the existence of nitridation at the SiO$_2$/Si substrate. The electrical characteristics of ONO films were evaluated by I-V and high frequency C-V measurements When the ONO films were annealed at 90$0^{\circ}C$ for 30 sec in $N_2$ ambient, the breakdown voltage increased and flat-band voltage decreased under high electric field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.194-198
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• 2010

Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a $B_4C$ layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a $B_4C$ target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and $B_4C$ were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of $sp^3$ BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.

• ETRI Journal
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• v.14 no.1
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• pp.40-51
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• 1992

$0.25{\mu} m$ 급 pMOSFET소자를 구현하기 위해, $P^+$ 폴리실리콘을 적용한 pMOS를 제작하였으며, $p^+$ 폴리실리콘 게이트 소자에서 심각하게 문제가 되고 있는 붕소이온 침투현상을 조사하고 붕소이온 침투가 일어나지 않는 최적열처리온도를 조사하였다. 소자제조 공정중 게이트 공정만 전자선 (EBML300)을 이용하여 직접묘사하고 그 이외의 공정은 stepper(gline) 을 사용하는 Mix & Match 방법을 사용하였다. 또한 붕소이온 침투현상을 억제하기 위한 한가지 예로서, 실리콘산화막과 실리콘질화막을 적층한 ONO(Oxide/Nitride/Oxide) 구조를 게이트 유전체로 적용한 소자를 제작하여 그 가능성을 조사하였다. 그 결과 $850^{\circ}C$의 온도와 $N_2$ 분위기에서 30분동안 열처리 하였을 경우, 붕소이온의 침투현상이 일어나지 않음을 SIMS(Secondary Ion Mass Spectrometer) 분석 및 C-V(Capacitance-Voltage) 측정으로 확인할 수 있었으며 그 이상의 온도에서는 붕소이온이 침투되어 flat band전압(Vfb)을 변화시킴을 알았다. 6nm의 얇은 게이트 산화막 및 $0.1{\mu} m$ 이하의 LDD(Lightly Doped Drain) $p^-$의 얇은 접합을 형성함으로써 소자의 채널길이가 $0.2 {\mu} m$까지 짧은 채널효과가 거의 없는 소자제작이 가능하였으며, 전류구동능력은 $0.26\muA$/$\mu$m(L=0.2$\mu$m, V$_DS$=2.5V)이었고, subthreshold 기울기는 89-85mV/dec.를 얻었다. 붕소이온의 침투현상을 억제하기 위한 한가지 방법으로 ONO 유전체를 소자에 적용한 결과, $900^{\circ}C$에서 30분의 열처리조건에서도 붕소이온 침투현상이 일어나지 않음으로 미루어 , $SiO_2$ 게이트 유전체보다 ONO 게이트 유전체가 boron 침투에 대해서 좋은 장벽 역활을 함을 알았다. ONO 게이트 유전체를 적용한 소자의 경우, subthreshold특성은 84mV/dec로서 좋은 turn on,off 특성을 얻었으나, ONO 게이트 유전체는 막자체의 누설전류와 실리콘과 유전체 계면의 고정전하량인 Qss의 양이 공정조건에 따라 변화가 심해서 문턱전압 조절이 어려워 소자적용시 문제가 된다. 최근 바닥 산화막(bottom oxide) 두께가 최적화된 ONO 게이트 유전체에 대하 연구가 활발히 진행됨을 미루어, 바닥 산화막 최적화가 된다면 더 좋은 결과가 예상된다.

• Design & Manufacturing
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• v.10 no.3
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• pp.14-19
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• 2016

Thermally or electrically conductive filler reinforced polymer composites are extensively being developed as the demand for light weight material increases rapidly in industiral applications need good conductivity such as heat sink of the electronics or light. Carbon or ceramic materials like graphite, carbon nanotube or boron nitride are typical conductive fillers with good thermal or electical conductivity. Using these conductive fillers, the polymer composites in the market show wide range of thermal conductivity from approximately 1 W/mK to 20 W/mK, which is quite enhanced considering the thermal conductivity lower than 0.5 W/mK for most polymeric materials. The practical use of these composites, however, is yet limited to specific applications because most composites are still not conductive enough or too difficult to process, too brittle, too expensive for higher conductivity. For practical use of conductive composite, the thermal conductivity required depending on the heat releasing mode are studied first for simplified unit cooling geometry to propose thermal conductivities of the composites for reasonable cooling performance comparing with the metal heat sink as a reference. Also, as a practical design for heat sink based on polymer composite, composite and metal sheet hybrid structures are investigated for LED lamp heat sink and audio amplication module housing to find that this hybrid structure can be a good solution considering all of the cooling performance, manufacturing, mechanical performance, cost and weight.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of the Korean Magnetics Society
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• v.22 no.4
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• pp.117-120
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• 2012

Compounds such as NaN belong to an interesting class of materials in which a magnetic order may appear despite the lack of d electrons. The magnetic properties of these materials are ascribed to the partially filled p shells. Recently, on the basis of electronic structure calculations from first principles, it has been found that NaN is a ferromagnetic half-metal in rocksalt (RS) and zinc-blende (ZB) structures with half-metallic band gaps in majority electron channels. The former structure has appeared to be more stable. From the first-principles calculation, we found that the half-metallic properties of the bulk RS and ZB NaN are conserved at the RS(001) and ZB(110) surfaces. Due to the interactions between Na s and N p electrons, N atoms become positively polarized. In the RS NaN (001) the calculated values of the magnetic moments of the N atoms is about $0.73{\mu}_B$. The magnetic moment on the N atom in the top most layer of ZB(110) is slightly larger than that of the RS(001) surface, i.e., $0.75{\mu}_B$. The Na atoms in the both structure are hardly polarized.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1268-1270
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• 1993

In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.