• Journal of information and communication convergence engineering
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• 제13권1호
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• pp.56-61
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• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.40-43
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• 2004

Stamps for microcontact processing are fabricated by casting elastomer such as PDMS on a master with a negative of the desired pattern. After curing, the PDMS stamp is peeled away from the master and exposed to a solution of ink and then dried. Transfer of the ink from the PDMS stamp to the substrate occurs during a brief contact between stamp and substrate. Generally, negative-tone masters, which are used for making positive-tone PDMS stamps, are fabricated by using photolithographic technique. The shortcomings of photolithography are a relative high-cost process and require extensive processing time and heavy capital investment to build and maintain the fabrication facilities. The goal of this study is to fabricate a negative-tone master by using Nano-indenter based patterning technique. Various sizes of V-grooves and U-groove were fabricated by using the combination of nanoscratch and HF isotropic etching technique. An achieved negative-tone structure was used as a master in the PDMS replica molding process to fabricate a positive-tone PDMS stamp.

• Journal of Magnetics
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• 제12권1호
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.291-291
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• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.275-280
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• 2005

나노 임프린트 (NIL)와 포토 리소그라피를 접목시킨 combined nanoimprint and photolithography (CNP) 기술을 이용하여 나노 미세 패턴을 형성하였다. 일반적인 UV-NIL 스탬프의 양각 패턴 위에 Cr 금속막을 입힌 hybrid mask mold (HMM)을 E-beam writing과 plasma etching으로 제작하였다. HMM 전면에는 친수성 물질인 $SiO_2$를 코팅하여 점착방지막 역할의 self-assembled monolayer(SAM) 형성을 용이하게 함으로써 HMM과 transfer layer의 분리를 용이하게 하여 패턴 손상을 억제하였다. 또한, transfer layer에는 일반적인 monomer resin 대신에 건식 에칭에 대한 저항력이 높은 negative PR을 사용하였다. Photo-mask 역할을 하는 HMM의 Cr 금속막이 UV를 차단하여 잔류하게 되는 PR의 비경화층(unexpected residual layer)은 간단한 현상 공정으로 제거하여 PR 잔류층이 없는 나노 미세 패턴을 transfer layer에 형성하였다.