• 제목/요약/키워드: negative information

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Non-Negative Matrix Factorization을 이용한 음성 스펙트럼의 부분 특징 추출 (Parts-based Feature Extraction of Speech Spectrum Using Non-Negative Matrix Factorization)

  • 박정원;김창근;허강인
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 신호처리소사이어티 추계학술대회 논문집
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    • pp.49-52
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    • 2003
  • In this paper, we propose new speech feature parameter using NMf(Non-Negative Matrix Factorization). NMF can represent multi-dimensional data based on effective dimensional reduction through matrix factorization under the non-negativity constraint, and reduced data present parts-based features of input data. In this paper, we verify about usefulness of NMF algorithm for speech feature extraction applying feature parameter that is got using NMF in Mel-scaled filter bank output. According to recognition experiment result, we could confirm that proposal feature parameter is superior in recognition performance than MFCC(mel frequency cepstral coefficient) that is used generally.

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COMPARISONS OF LOSS FORMULAS FOR A CIRCUIT GROUP WITH OVERFLOW TRAFFIC

  • Park, Chul-Geun;Han, Dong-Hwan
    • Journal of applied mathematics & informatics
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    • 제30권1_2호
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    • pp.135-145
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    • 2012
  • Traditionally, ERM (Equivalent Random Method) is used to determine number of circuits in an overflow circuit group with rough traffic which has vmr(variance to mean ratio) greater than one. Recently, IPP(Interrupted Poisson Process) approximate method which represents the collective feature of the overflow has been introduced. The negative binomial loss formula can be applied to determine the required number of circuits in the overflow circuit group. In this paper, we deal with the negative binomial loss formula and determination method of number of circuits. We also analyze and compare these three loss formulas.

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

  • Shin, Sunhae;Kang, In Man;Kim, Kyung Rok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.546-550
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    • 2013
  • We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

Yarned CNT Fiber 저항체의 전기적 특성 (Electrical Properties of Yarned Carbon Nanotube Fiber Resistors)

  • 임영택;이선우
    • 한국전기전자재료학회논문지
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    • 제30권1호
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    • pp.59-62
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    • 2017
  • CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.

부저항발진기의 최대주파수 해석(I보) (Analysis of Negative Resistance Maximum Oscillating Frequeney)

  • 김영권;서정홍
    • 대한전자공학회논문지
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    • 제6권2호
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    • pp.6-20
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    • 1969
  • 부저항소자인 턴넬다이오드와 수동선형부하로 부저항발진기를 구성하고 수동부하를 가변하여 주파수최대화에 관해서 연구했다. 이론적인 해석과 복소평면상의 임피이던스 궤적을 도시하고 병렬-RL부하와 저항부하의 두 경우의 최대발진주파수를 측정하여 두 경우의 실험결과를 보면 병렬-RL부하의 폭이 훨씬 높은 주파수를 발진하는 것을 알았다.

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Design of Voltage Controlled Oscillator using Miller Effect

  • Choi Moon-Ho;Kim Yeong-Seuk
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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    • pp.218-220
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    • 2004
  • A new wide-band VCO topology using Miller capacitance is proposed. Contrary to conventional VCO using the Miller capacitance where the variable amplifier gain is negative, the proposed VCO uses both the negative and positive variable amplifier gain to enhance the frequency tuning range significantly. The proposed VCO is simulated using HSPICE. The simulations show that 410MHz and 220MHz frequency tuning range are obtained using the negative .and positive variable amplifier gain, respectively. The tuning range of the proposed VCO is $23\%$ of the center frequency(2.8GHz). The phase noise is -104dBc/Hz at 1MHz offset by simple model. The operating current is only 3.84mA at 2.5V power supply.

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유치원 아동의 타액환원효소활성 및 우식경험도와 치과내원시 행동의 연관성에 관한 연구 (CORRELATION OF DENTAL BEHAVIOR WITH SALIVARY REDUCTASE ACTIVITY AND CAIRES ACTIVITY IN PRESCHOOL CHILDREN)

  • 이광희
    • 대한소아치과학회지
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    • 제23권4호
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    • pp.925-930
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    • 1996
  • The purpose of this study was to know whether the information of caries activity and caries experience of the children can be used to predict the behavior of the children during the dental treatment. The subjects of the study were one hundred and eighty-one preschool children, three to six years old. Salivary reductase activity was tested by the Resazurin Disc Test. Caries experience was examined. The children's behavior was observed using the rating scale of Frankl. Salivary reductase activity of the negative behavior group was slightly higher than that of the positive behavior goup, but the difference was not significant. dt index and ds index of the negative behavior group were significantly higher than those of the positive behavior group. There were no significant differences in ft index and fs index between the two behavior groups. The results suggest that the negative behavior of a child can be predicted when the child has many untreated dental caries.

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IPM모터의 턴쇼트 고장모델에 관한 연구 (Development of Inter Turn Short Fault Model of IPM Motor)

  • 구본관
    • 전력전자학회논문지
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    • 제20권4호
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    • pp.305-312
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    • 2015
  • In this study, inter-turn short fault models of interior permanent magnet synchronous motors (IPMSM) are developed by adding saliency modeling to surface-mounted permanent magnet motor models. The saliency model is obtained using the deformed flux models based on both fault-winding flux information and inductance variations caused by cross-flux linkages that depend on the distribution of the same phase windings. By assuming the balanced three-phase current injection, we obtain the positive and negative sequence voltages and the fault current in the positive and the negative synchronous reference frames. The output torque model is developed by adding the magnet and the reluctance torque, which are derived from the developed models. To verify the proposed IPMSM model with an inter-turn short fault, finite element method-based simulation and experimental measurement results are presented.

A NEW SYSTEM OF VISUAL PRESENTATION OF ANALYSIS OF TEST PERFORMANCE: THE 'DOUBLE-RING' DIAGRAM

  • Stefadouros Miltiadis A.
    • 대한예방의학회:학술대회논문집
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    • 대한예방의학회 1994년도 교수 연수회(역학)
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    • pp.142-149
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    • 1994
  • Substitution of graphic representation for extensive lists of numerical statistical data is highly desirable by both editors and readers of medical journals, faced with an exploding abundance of contemporary medical literature. A novel graphic tool. the 'double-ring diagram', is described herein which permits visual representation of information regarding certain statistical variables used to describe the performance of a test or physical sign in the diagnosis of a disease. The diagram is relatively easy to construct on the basis of a number of primary data such as the prevalence and the true positive, true negative. false positive and false negative test results. These values are reflected in the diagram along with the values of other statistical variables derived from them. such as the sensitivity. specificity, predictive values for positive and negative test result. and accuracy. This diagram may be useful in visualizing a test's performance and facilitating visual comparison of performance of two or more tests.

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Field-domain dynamics and current self-oscillations in negative-effective-mass terahertz oscillators

  • Cao, J.C.;Qi, M.
    • 한국진공학회지
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    • 제12권S1호
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    • pp.36-39
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    • 2003
  • Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.