• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.116-119
• /
• 2004

In this paper, we have improved a novel (ECB) mode using tilt angle in the unique condition by hot-plate equipment. The new control of tilt angle for nematic liquid crystal (NLC) with negative and positive dielectric anisotropy on the rubbed homeotropic polyimide (PI) using baking method by Hot-plate equipment was investigated. LC tilt angle decreased with increasing baking temperature and time. Especially, the low LC tilt angle of positive type NLC $({\Delta}n>0)$ on the rubbed homeotropic PI surface by increasing temperature and time was measured. The EO characteristics of the novel ECB mode using control of tilt angle on the homeotropic surface than that of conventional OCB cell can be improved. We suggest that the developed the Novel ECB cell using control of tilt angle on the homeotropic surface is a promising technique for the achievement of a fast response time and a high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.530-533
• /
• 2002

Blending effects for generating a pretilt angle in nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) of homeotropic and homogeneous alignment surface were studied. Also, we investigated the EO performances for the advanced VA-$\pi$ cell using this homeotropic blended PI surface. A many decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with side chain type was measured, and the tilt angle decreased as blended ratio and rubbing strength increase. The blended effects for generating a pretilt angle were clearly observed, and the many decrease of tilt angle can be achieved by using the blended PI surface. The electro-optical (EO) characteristics using the advanced VA-$\pi$ cell using the homeotropic blended PI surface than that of conventional VA cell can be improved. We suggest that the developed advanced VA-$\pi$ cell on a homeotropic blended PI surface is a promising technique for the achievement of a fast response time, and a high contrast ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.9
• /
• pp.826-832
• /
• 2003

Blending effects for generating a pretilt angle in nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) of homeotropic and homogeneous alignment surface were studied. Also, we investigated the EO performances for the advanced VA- $\pi$ cell using this homeotropic blended PI surface. A many decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with side chain type was measured, and the tilt angle decreased as blended ratio and rubbing strength increase. However, a small decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with main chain type was measured. The blended effects for generating a pretilt angle were clearly observed, and the many decrease of tilt angle can be achieved by using the blended PI surface. The electro-optical (EO) characteristics using the advanced VA- $\pi$ cell using the homeotropic blended PI surface than that of conventional VA cell can be improved. We suggest that the developed advanced VA-$\pi$ cell on a homeotropic blended PI surface is a promising technique for the achievement of a fast response time, and a high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.181-184
• /
• 2005

In this paper, we have improved a novel fast response time liquid crystal operating mode using tilt angle in the unique condition by hot-plate equipment. The new control of tilt angle for nematic liquid crystal (NLC) with negative and positive dielectric anisotropy on the rubbed homeotropic polyimide (PI) using baking method by Hot-plate equipment was investigated. LC tilt angle decreased with increasing baking temperature and time. Especially, the low LC tilt angle of positive type NLC (${\Delta}n$>0) on the rubbed homeotropic PI surface by increasing temperature and time was measured. The EO characteristics of the high tilted OCB(HTOCB) mode using control of tilt angle on the homeotropic surface than that of conventional OCB cell can be improved. We suggest that the developed the HTOCB cell using control of tilt angle on the homeotropic surface is a promising technique for the achievement of a fast response time and a high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.109-113
• /
• 2005

We have studied a field sequential liquid crystal display (FSLCD) with electrically controlled birefringence (ECB). The ECB mode exhibiting fast response time, high transmittance, low operating voltage and adequate viewing angle. The positive liquid crystal (LC) is better than negative LC on dielectric anisotropy, birefringence and rotational viscosity. Because $K_{11}$ value out of the elastic coefficient of LC is also larger than $K_{22}$ value, decay time of VA-ECB is advantage. However, the transmittance & response time reduced with decreasing the cell gap. This drawback can be overcome by using LC with high ${\Delta}n$ but VA-ECB is occured loss of light efficiency because the $\gamma$ value increased by high ${\Delta}n$ of LC. Consequently, the HA-ECB mode is one of strongest candidate for FSLCD application.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.337-345
• /
• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• The Journal of Engineering Geology
• /
• v.9 no.2
• /
• pp.119-134
• /
• 1999

Joints developed around the Moryang fault were investigated by traverse and inventory methods in order to characterize their orientation, spacing and density. The results of the traverse method show that the orientation of the dominant joint sets of the study area is NNE and EW, and that joint spacing distribution is a negative exponential distribution to the center of the fault and a log-normal distribution to the margin of the fault. The results of the inventory method show that the orientation of the dominant joint sets on joint map is NW and NE, and that joint density tends to increase toward the center of the fault. Fractal dimension was determined by using Box-counting method and Cantor's dust method to quantify the distribution of joint network and to evaluate the dimension around the fault. The dimension determined by Box-counting method ranges from 1.31 to 1.70 and shows the tendency of increasing value toward the center of the fault. Comparing fractal dimension by Box-counting method with joint density, fractal dimension is directly proportional to joint density. Nevertheless, fractal dimension could be varied due to the different distribution patterns of the joints with same density. The dimensions determined by Cantor's dust method show different values with respect to the orientation of scan lines. This results form the anisotropy of joint distribution.

• Korean Journal of Biological Psychiatry
• /
• v.26 no.1
• /
• pp.8-13
• /
• 2019

Objectives Disrupted integrities of the fornix and stria terminalis have been suggested in schizophrenia. However, very few studies have focused on the fornix and stria terminalis comparing first-episode schizophrenia (FESZ), chronic schizophrenia (CS), and healthy controls (HCs) with the application of diffusion-tensor imaging (DTI) technique. The objective of this study is to compare the connectivity of the fornix and stria terminalis among FESZ, CS, and HCs. Methods We included the 44 FESZ patients, 39 CS patients and 20 HCs in this study. Voxel-wise statistical analysis of the fractional anisotropy (FA) data was performed using Tract-Based Spatial Statistics to analyze the connectivity of fornix and stria terminalis. In addition, the Scale for the Assessment of Positive Symptoms (SAPS) and the Scale for the Assessment of Negative Symptoms (SANS) were used to evaluate clinical symptom severities. Results There were no significant differences between the FESZ, CS, and HCs in age, sex, education years. The SAPS and SANS scores of the schizophrenia groups showed no significant differences. FA values of the right fornix cres/stria terminalis in the CS group were significantly lower than those in FESZ and HCs. There were no significant differences of FA values of the right fornix cres/stria terminalis between the FESZ and the HCs. Pearson correlation analyses revealed that significant correlation between FA values of the right fornix cres/stria terminalies of the the FESZ group and positive, negative symptom scales, and FA values of the right fornix cres/stria terminalis of the CS group and negative symptom scales. Conclusions This study shows that FA values of the fornix and stria terminalis in the CS were lower than in the FESZ and the HCs. These results suggest that the fornix and stria terminalis can play a role in pathophysiology of schizophrenia. Thus current study can broaden our understanding of the pathophysiology of schizophrenia.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.370.1-370.1
• /
• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• Journal of Powder Materials
• /
• v.21 no.6
• /
• pp.434-440
• /
• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.