• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
• /
• pp.114.1-114
• /
• 2002

• 한국전기전자재료학회논문지
• /
• 제34권4호
• /
• pp.246-250
• /
• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2008년도 추계학술대회 초록집
• /
• pp.83-85
• /
• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.

• 한국토양비료학회지
• /
• 제49권6호
• /
• pp.819-825
• /
• 2016

Monitoring of soil fertility and crop productivity in long-term application of silicate fertilizers is necessary to use fertilizers efficiently. This study was conducted to investigate effects of continuous application of silicate fertilizer for rice cultivation from 1969 to 2014. The treatments were no silicate fertilizer treatments (N, NC, NPK, and NPKC) and silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S). The 46-yr input of $2\;ton\;ha^{-1}yr^{-1}$ of silicate fertilizer increased pH 0.6 ~ 1.1 and exchangeable Ca $2.0{\sim}2.4cmol_c\;kg^{-1}$ in silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S) compared with no silicate fertilizer treatments (N, NC, NPK, and NPKC) because silicate fertilizer included Ca component. Also, available silicate concentrations of silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S) increased $169mg\;kg^{-1}$ compared to no silicate fertilizer treatments. In Period II ('90~'14), the mean annual Si field balance varied from 62 to $175kg\;ha^{-1}yr^{-1}$ in silicate fertilizer treatments, indicating continuous accumulation of soil Si. Silicon uptake and grain yield of rice had greater differences between N treatment and N+S treatment than other treatments. This showed that the application of silicate fertilizer had greater effect in nutrient-poor soils than in proper nutrient soils. Thus the application of silicate fertilizer led to improvement the fertility of soil and increasement of rice production for the lack of soil nutrients.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.192.1-192.1
• /
• 2015

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2003년도 제25회 학술발표회 초록집
• /
• pp.114-115
• /
• 2003

• 한국전기전자재료학회논문지
• /
• 제30권2호
• /
• pp.115-118
• /
• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
• /
• pp.394-396
• /
• 2008

기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 $300^{\circ}C$ 이상의 증착온도 등의 단점을 보완한 증착 기술로 중성입자 빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 중성빔을 이용하여 HNB sputtering 방법과 $SiH_4$와 Ar, $H_2$ 가스를 이용한 HNB CVD 방법으로 a-Si 박막 제작에 대한 연구를 진행하였고, HIT(heterojunction with Intrinsic Thin layer) cell 태양전지를 만들고자 기본적인 박막 증착과 박막 특성 및 계면특성 등의 분석을 실시하였다. 유리기판과 p-type Si 기판 위에 a-Si 및 nc-Si 박막을 증착하였으며, TEM, FTIR, Raman, IV 측정 등을 통해 그 특성을 분석하여 HNB의 특성 및 효과를 규명하였다.

• Molecules and Cells
• /
• 제41권5호
• /
• pp.423-435
• /
• 2018

This investigation was aimed at working out the combined role of lncRNA H19, miR-29b and Wnt signaling in the development of colorectal cancer (CRC). In the aggregate, 185 CRC tissues and corresponding para-carcinoma tissues were gathered. The human CRC cell lines (i.e. HT29, HCT116, SW480 and SW620) and normal colorectal mucosa cell line (NCM460) were also purchased. Si-H19, si-NC, miR-29b-3p mimics, miR-29b-3p inhibitor, si-PGRN and negative control (NC) were, respectively, transfected into the CRC cells. Luciferase reporter plasmids were prepared to evaluate the transduction activity of $Wnt/{\beta}-catenin$ signaling pathway, and dual-luciferase reporter gene assay was arranged to confirm the targeted relationship between H19 and miR-29b-3p, as well as between miR-29b-3p and PGRN. Finally, the proliferative and invasive capacities of CRC cells were appraised through transwell, MTT and scratch assays. As a result, overexpressed H19 and down-expressed miR-29b-3p displayed close associations with the CRC patients' poor prognosis (P < 0.05). Besides, transfection with si-H19, miR-29b-3p mimic or si-PGRN were correlated with elevated E-cadherin expression, decreased snail and vimentin expressions, as well as less-motivated cell proliferation and cell metastasis (P < 0.05). Moreover, H19 was verified to directly target miR-29b-3p based on the luciferase reporter gene assay (P < 0.05), and miR-29b-3p also bound to PGRN in a direct manner (P < 0.05). Finally, addition of LiCl ($Wnt/{\beta}-catenin$ pathway activator) or XAV93920 ($Wnt/{\beta}-catenin$ pathway inhibitor) would cause remarkably altered E-cadherin, c-Myc, vimentin and snail expressions, as well as significantly changed transcriptional activity of ${\beta}-catenin/Tcf$ reporter plasmid (P < 0.05). In conclusion, the lncRNA H19/miR-29b-3p/PGRN/Wnt axis counted a great deal for seeking appropriate diagnostic biomarkers and treatment targets for CRC.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.257.2-257.2
• /
• 2015

In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.