• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.49-49
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• 2009

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.04b
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• pp.26-27
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.4-4
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.5-6
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.30-31
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.101-102
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• 2017

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.4.1-4.1
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.21-24
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• 2020

We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100℃. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.