• Title/Summary/Keyword: nanomechanical properties

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Effect of Microstructure on the Environmentally Induced Cracking Behavior of Al-Zn-Mg-Cu-Zr Aluminum Alloy

  • Ghosh, Rahul;Venugopal, A.;Pradeep, PI;krishna, L. Rama;Narayanan, P. Ramesh;Pant, Bhanu;Cherian, Roy M
    • Corrosion Science and Technology
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    • v.17 no.3
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    • pp.101-108
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    • 2018
  • AA7010 is an Al-Zn-Mg-Cu alloy containing Zr, developed as an alternate to traditional AA7075 alloy owing to their high strength combined with better fracture toughness. It is necessary to improve the corrosion resistance and surface properties of the alloy by incorporating plasma electrolytic oxidation (PEO) method. AA7010-T7452 aluminum alloy has been processed through the forging route with multi-stage working operations, and was coated with $10{\mu}m$ thick $Al_2O_3$ ceramic aluminina coating using the plasma electrolytic oxidation (PEO) method. The corrosion, stress corrosion cracking (SCC) and nano-mechanical behaviours were examined by means of potentiodynamic polarization, slow strain rate test (SSRT) and nano-indentation tests. The results indicated that the additional thermomechanical treatment during the forging process caused a fully recrystallized microstructure, which lead to the poor environmental cracking resistance of the alloy in 3.5% NaCl solution, despite the overaging treatment. Although the fabricated PEO coating improved general corrosion resistance, the brittle nature of the coating did not provide any improvement in SCC resistance of the alloy. However, the hardness and elastic modulus of the coating were significantly higher than the base alloy.

Evaluation of Toxicity and Gene Expression Changes Triggered by Quantum Dots

  • Dua, Pooja;Jeong, So-Hee;Lee, Shi-Eun;Hong, Sun-Woo;Kim, So-Youn;Lee, Dong-Ki
    • Bulletin of the Korean Chemical Society
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    • v.31 no.6
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    • pp.1555-1560
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    • 2010
  • Quantum dots (QDs) are extensively employed for biomedical research as a fluorescence reporter and their use for various labeling applications will continue to increase as they are preferred over conventional labeling methods for various reasons. However, concerns have been raised over the toxicity of these particles in the biological system. Till date no thorough investigation has been carried out to identify the molecular signatures of QD mediated toxicity. In this study we evaluated the toxicity of CdSe, $Cd_{1-x}Zn_xS$/ZnS and CdSe/ZnS quantum dots having different spectral properties (red, blue, green) using human embryonic kidney fibroblast cells (HEK293). Cell viability assay for both short and long duration exposure show concentration material dependent toxicity, in the order of CdSe > $Cd_{1-x}Zn_xS$/ZnS > CdSe/ZnS. Genome wide changes in the expression of genes upon QD exposure was also analyzed by wholegenome microarray. All the three QDs show increase in the expression of genes related to apoptosis, inflammation and response towards stress and wounding. Further comparison of coated versus uncoated CdSe QD-mediated cell death and molecular changes suggests that ZnS coating could reduce QD mediated cytotoxicity to some extent only.

The Effect of Citric Acid on Copper Chemical Mechanical Polishing (구연산이 Copper Chemical Mechanical Polishing에 미치는 영향)

  • Jung, Won-Duck;Park, Boum-Young;Lee, Hyun-Seop;Lee, Sang-Jic;Chang, One-Moon;Park, Sung-Min;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.565-566
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    • 2006
  • Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.

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Effects of Curing Temperature on the Optical and Charge Trap Properties of InP Quantum Dot Thin Films

  • Mohapatra, Priyaranjan;Dung, Mai Xuan;Choi, Jin-Kyu;Jeong, So-Hee;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.32 no.1
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    • pp.263-272
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    • 2011
  • Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

The Study of Ag Thin Film of Suitable Anode for T-OLED: Focused on Nanotribology Methode (UV 처리에 의한 T-OLED용 산화전극에 적합한 Ag 박막연구: Nano-Mechanics 특성 분석을 중심으로)

  • Lee, Kyu Young;Kim, Soo In;Kim, Joo Young;Kwon, Ku Eun;Kang, Yong Wook;Son, Ji Won;Jeon, Jin Woong;Kim, Min Chul;Lee, Chang Woo
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.328-332
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    • 2012
  • The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.