• Proceedings of the Korea Crystallographic Association Conference
• /
• 2001.11a
• /
• pp.9-9
• /
• 2001

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.3
• /
• pp.8-13
• /
• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• 한국전자현미경학회:학술대회논문집
• /
• 2004.11a
• /
• pp.64-65
• /
• 2004

• Proceedings of the Korean Society of Potoscience Conference
• /
• spring
• /
• pp.21-21
• /
• 1998

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.4
• /
• pp.169-172
• /
• 2003

Silicon nanocrystalline thin films on p-type (100) silicon substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532, and 1064 nm. The base vacuum in the chamber was down to $10^-6$ Torr and the laser energy densities were 1.0~3.0 J/$\textrm{cm}^2$ After deposition, silicon nanocrystalline thin films have been annealed at nitrogen gas. Strong Blue and green luminescence from silicon nanocrystalline thin films have been observed at room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355 to 1064 nm.

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.56-61
• /
• 2003

Nanocrystalline hydrogenated silicon (nc-Si : H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH₄ and H₂ gas was introduced into the evacuated reaction chamber. When the H₂ gas flow rate was low, the density of Si-H₃ bonds was high in the films. On the other hand, when the H₂ gas flow rate was high, e.g., 100 sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of Si nanocrystallites. The relative fraction of the Si-H₃ and Si-H₂ bonds in the amorphous matrix varied sensitively with the H₂ gas flow rate. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the Si nanocrystallites in the films.

• Journal of the Korean Ceramic Society
• /
• v.45 no.10
• /
• pp.573-578
• /
• 2008

In the preparation of hydroxyapatite(HAp)/gelatin(GEL) nanocomposite, GEL matrix was modified by the introduction of chondroitin sulfate(ChS) to obtain a strongly organized composite body. The formation reaction of the HAp/GEL-ChS nanocomposite was then investigated via XRD, DT/TGA, FT-IR, TEM and SEM. The organic-inorganic interaction between HAp nanocrystallites and GEL molecules was confirmed from DT/TGA and FT-IR. According to the DT/TGA results, the exothermal temperature zone between 300 and $550^{\circ}C$ showed an additional peak temperature that indicated the decomposition of the combined organics of the GEL and ChS. From the FT-IR analysis, calcium phosphate(Ca-P) was covalently bound with the GEL macromolecules modified by ChS. From TEM and ED, the matrix of the GEL-ChS molecules was mineralized by HAp nanocrystallites and the dense dried nanocomposite body was confirmed from SEM micrographs.

• 한국전자현미경학회:학술대회논문집
• /
• 2005.05a
• /
• pp.98-99
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.68-69
• /
• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.226-231
• /
• 2002

The present study discusses the results of the controlled precipitation of HgTe nanocrystals in a PbTe semiconductor matrix and demonstrates its effectiveness in producing well-organized and crystallographically aligned semiconductor nanocrystals. Following the similar procedure used in metallic alloys, the semiconductor alloys are treated at 600$^{\circ}C$ for 48 hours, quenched and aged up to 500 hours at 300$^{\circ}C$ and 450$^{\circ}C$ to induce homogeneous nucleation and growth of HgTe nanocrystalline precipitates. Examination of the resulting precipitates using transmission electron microscopy (TEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the {100} habit planes making a crystallographic relation of {100}$\sub$HgTe///{100}$\sub$PbTe/ and [100]$\sub$HgTe///[100]$\sub$PbTe/. It is also found that the nato-disc undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for the preparation of the desirable quantum-dot nanostructures.