• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 한국레이저가공학회지
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• 제16권4호
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• pp.1-6
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• 2013

Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• 한국진공학회지
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• 제16권5호
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• pp.366-370
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• 2007

밀도가 높고 주기적으로 배열된 나노 크기의 기공이 25nm 두께의 실리콘 산화막 기판위에 형성 되었다. 나노미터 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성하였다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 나노크기의 마스크를 만들었다. 폴리스티렌으로 이루어진 나노패턴의 지름은 $8{\sim}30nm$ 였고 높이는 40nm였으며, 패턴과 패턴사이의 간격은 60nm였다. 형성된 패턴을 실리콘 산화막 위에 전사시키기 위해 불소 기반의 화학 반응성 식각을 사용하였다. 실리콘 산화막에 형성된 기공의 지름은 $9{\sim}33nm$였다. 실리콘 산화막을 불산으로 제거하여 실리콘에 형성된 기공을 관찰하였고, 실리콘기판에 형성된 기공의 지름은 $6{\sim}22nm$였다. 형성된 기공의 크기는 폴리메틸메타아크릴레이트의 분자량과 관계가 있음을 알 수 있었다.

• 한국진공학회지
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• 제15권1호
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• pp.97-102
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• 2006

양극 산화된 알루미나 (anodized aluminum oxide : AAO)는 균일하고 일정한 크기의 나노기공 패턴을 지니고 있다. AAO를 이온빔 나노 patterning을 위한 이온조사 시 마스크로서 이용하기 위해 AAO 나노 기공을 통과하는 이온빔의 투과율(AAO에 입사한 이온에 대한 투과이온의 양의 비)을 측정하였다. Al bulk foil을 양극 산화하여 두께가 $4{\mu}m$이고 종횡비(두께와 기공의 지름의 비)가 각각 200:1, 100:1 인 AAO를 Goniometer에 부착하여 500 keV의 $O^{2+}$ 이온빔에 대해 나노기공을 정렬시킨 후, 기울임 각에 따른 투과율을 측정한 결과, 종횡비가 200:1, 100:1 일 때 투과율은 각각 약 $10^{-8},\;10^{-4}$로 거의 이온빔이 투과하지 못하였다. 반면에 $SiO_2$ 위에 증착된 Al 박막으로 양극산화하여 종횡비가 5:1인 AAO의 이온빔 투과율은 0.67로 투과율이 현저히 향상되었다. 높은 종횡비를 갖는 AAO의 경우에는 범과 AAO 기공의 정렬이 쉽지 않은데다 알루미나의 비전도성으로 인한 charge-up 현상으로 인해 이온빔이 극히 투과하기 어렵기 때문이다. 실제로 80 keV의 Co 음이온을 종횡비 5:1인 AAO에 조사시킨 후에는 AAO 나노기공과 동일한 크기의 나노 구조체가 형성됨을 주사전자현미경(scanning electron microscopy: SEM) 관찰을 통하여 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• 소성∙가공
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• 제13권4호
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1806-1809
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• 2008

Study that form micro pattern by direct ink jet printing method is getting attention recently. Direct ink jet printing spout fine droplet including nano metal particle by force or air pressure. There is reason which ink jet printing method is profitable especially in a various micro-patterning technology. It can embody patterns directly without complex process such as mask manufacture or screen-printing for existent lithography. In this study, research of a technology that ejects fine droplet form of Pico liter and forms metal micro pattern was carried with inkjet head of piezoelectricity drive system. Droplet established pattern while ejecting consecutively and move on the surface at the fixed speed. Patterns formed in ink are mixed with organic solvent and polymer that act as binder. So added thermal hardening process after evaporate organic solvent at isothermal after printing. I executed high frequency special quality estimation of CPW transmission line to confirm electrical property of manufactured circuit board. We tried a large area printing to confirm application possibility of an ink jet technology.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2005년도 춘계학술대회 논문집
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• pp.395-400
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• 2005

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• 한국광학회지
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• 제23권1호
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• pp.12-16
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• 2012

본 논문에서는 연성 광 인쇄회로기판(printed circuit board, PCB) 개발을 위한 핵심 부품인 연성 광도파로를 자외선 임프린트(ultra violet imprint, UV-imprint) 공정에 의해 제작하고 도파손실, 굴곡손실, 반사손실 및 반복굴곡에 대한 내구성을 측정하였다. 먼저, 초정밀 기계가공에 의해 광도파로 패턴과 $45^{\circ}$ 미러 구조를 포함하는 니켈 마스터를 제작 후 폴리디메틸실록산(polydimethylsiloxane, PDMS)를 이용하여 탄성체 몰드를 역상 복제 하였다. 역상 복제된 PDMS 몰드를 이용해 UV-imprint 공정에 의한 광도파로의 코어패턴과 $45^{\circ}$ 미러면을 동시 형성하여, $45^{\circ}$ 미러가 내장된 광도파로를 제작하였다. 또한, 광도파로의 끝단을 통상적 방법인 V-sawing 공정으로 $45^{\circ}$ 미러 구조를 가공하여 미러 내장형 광도파로와 미러 특성을 비교하였다. 제작된 연성 광도파로는 단위 길이당 0.035 dB/cm의 도파손실을 나타내었으며, 반경 1 mm의 $180^{\circ}$ 굴곡 조건에서 0.77 dB의 굴곡손실을 나타내었다. 또한, 굴곡각도 $135^{\circ}$, 굴곡반경 2.5 mm의 반복굴곡 실험에서 10 만회 이상의 반복굴곡에 대한 우수한 내구성을 확인하였다. 내장된 $45^{\circ}$ 미러의 반사효율을 향상시키기 위해 미러면에 Ni-Au 이중 박막을 증착하여 2.18 dB의 반사손실을 가진 미러내장형 연성 광도파로를 제작하였다.