• Title/Summary/Keyword: nano-glass

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A study on glass/glass wafer bonding and bonding strength for micro fluidic device (미세유체소자용 유리/유리 웨이퍼 접합 및 접합강도 평가)

  • Shin, Kyu-Sik;Park, Jun-Shik;Jang, Suk-Won;Park, Hyo-Derk;Kang, Sung-Goon;Song, Young-Hwa
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1917-1919
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    • 2003
  • 본 연구에서는 바이오 및 환경 분야에 적용 가능한 미세 유체소자 제작에 있어서 4" 유리 / 유리 웨이퍼접합을 시도하였으며, 접합결과 90%이상의 접합면적을 보였다. 접합된 샘플을 산 및 알카리 조건에 따른 인장시험결과 모든 조건에서 약 $2kgf/mm^2$ 이상의 접합강도를 보였으며 파괴는 접합면이 아닌 모재에서 발생되었다. 또한 미세유체소자 제작에 있어서 초음파를 이용하여 유리를 가공하였으며, 폭 $300{\mu}m$, 깊이 $200{\mu}m$의 미세채널을 제작하였다.

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Glass Slide-based Immunosensing for C-Reactive Protein Using Quantum Dot-Antibody Conjugate

  • Kim, Namsoo;Oh, Sun Mi;Kim, Chong-Tai;Cho, Yong Jin
    • Food Engineering Progress
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    • v.14 no.1
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    • pp.21-26
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    • 2010
  • C-Reactive protein (CRP), which is an 118 kDa pentameric protein, was secreted by the liver is an important biomarker for coronary disease, hypertension and inflammation. In this study, a method for CRP detection exploiting quantum dot (Qdot)-antibody conjugate was developed according to an indirect-competitive immunosensing protocol. For this purpose, a streptavidin-bound $Qdot_{605}$ was linked with a separately prepared biotinylated monoclonal antirat CRP antibody to produce a Qdot-antibody conjugate. The immunosensing was performed at 0.1 and 20 nM of the coating antigen and conjugate, respectively. The current method was found very sensitive in CRP detection, judging from the concentration-dependent fluorescence emission.

Fabrication and packaging of the vacuum magnetic field sensor (자장 세기 측정용 진공 센서의 제작 및 패키징)

  • Park, Heung-Woo;Park, Yun-Kwon;Lee, Duck-Jung;Kim, Chul-Ju;Park, Jung-Ho;Oh, Myung-Hwan;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.292-303
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    • 2001
  • This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

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($TruNano^{TM}$ processing of dielectric layers and barrier-rib on soda-lime glass substrate for PDP panel

  • Lee, Michael M.S.;Kim, Nam-Hoon;Cheon, Chae-Il;Cho, Guang-Sup;Kim, Jeong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.125-125
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    • 2006
  • We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

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EL properties of OLED devices using different NiO buffer thicknesses (NiO 완충층의 두께변화에 따른 OLED 발광특성)

  • Jeong, Tae-Jeong;Choi, Gyu-Chae;Chung, Kook-Chae;Kim, Young-Kuk;Cho, Young-Sang;Choi, Chul-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.180-180
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    • 2010
  • 본 연구에서는 P-Type의 NiO를 Glass기판의 ITO전극위에 RF-스퍼터링 방법으로 증착하였으며, NiO 완충층의 두께 변화에 따른 OLED (Organic Light Emitting Diode) 소자의 발광 특성에 대해 연구하였다[1, 2]. NiO는 우수한 전기 광학적 특성을 가지고 있어 OLED소자의 구동전압, 발광 효율 등의 특성을 향상 시킬 수 있다[3]. NiO 완충층의 두께 변화는 스퍼터링 증착시간을 통해 5-20 nm로 조절하였으며 소자의 구조는 Glass/ITO/NiO(0~20nm)/NPB(40nm)/Alq3(60nm)/LiF(0.5nm)/Al(120nm)형태로 제작하였다. ITO/NPB 계면에 NiO 완충층을 삽입함으로써 OLED 발광소자의 구동전압을 ~8V에서 ~5V (NiO, 10nm)로 낮출 수 있었다.

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Fabrication of embedded bottom electrodes for submicron beam resonators (서브마이크론 빔 레조네이터 제작을 위한 바닥전극 형성방법)

  • Lee, Yong-Seok;Jang, Yun-Ho;Bang, Yong-Seung;Kim, Jung-Mu;Kim, Jong-Man;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2008.10a
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    • pp.131-132
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    • 2008
  • We describe a fabrication method of submicron glass trenches which have embedded metal lines for the future application of nano-scale RF MEMS devices. The glass wafer was etched using two different conditions to identify the relationship between the slope of glass trenches and the slope of photroresist. A self-aligned metal photomask and negative photroresist (PR) slope were used to insert metal lines inside the glass trenches. The PR slope patterned by backside photolithography was affected by the profile of preformed glass trenches. Gold was well fabricated in the $0.7{\mu}m$ wide trench thanks to the negative PR slope. Nano-scale glass trenches with embedded metal lines can be used as a bottom electrode in submicron beam resonators operating with a high resonant frequency.

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A Study on the Durability Complement of Lightweight Photovoltaic Module (경량화 태양광 모듈의 내구성 보완에 관한 연구)

  • Jeong, Taewung;Park, Min-Joon;Kim, Hanjun;Song, Jinho;Moon, Daehan;Hong, Kuen Kee;Jeong, Chaehwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.2
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    • pp.110-114
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    • 2021
  • In this study, we fabricated light-weight solar module for various applications such as building integrated photovoltaics (BIPV), vehicles, trains, etc. Ethylene tetra fluoro ethylene (ETFE) film was applied as a material to replace the cover glass, which occupies more than 65% of the weight of the PV module. Glass fiber reinforced plastic (GRP) was applied to the ones with a low durability by replacing the cover glass to ETFE. Moreover, to achieve a high solar power conversion in this study, we applied a shingled design to weight reduced solar modules. The shingled module with GRP shows 183.7 W of solar-to-power conversion, and the output reduction rate after weight load test was 1.14%.

Electrical Property of the Li2O-2SiO2 Glass Sintered by Spark Plasma Sintering (Spark Plasma Sintering으로 제조한 Li2O-2SiO2 유리 소결체의 전기적 특성)

  • Yoon, Hae-Won;Song, Chul-Ho;Yang, Yong-Seok;Yoon, Su-Jong
    • Korean Journal of Materials Research
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    • v.22 no.2
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    • pp.61-65
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    • 2012
  • A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.