• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1035-1038
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• 2002

The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.513-516
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• 2008

We have replicated nanopillar arrays using injection molding process of active heating and cooling method by several peltier devices. The injection melding has a high accuracy ed good reproducibility that are essential for mass production at low cost. Conventional molding processes widely use the water-based mold heating and air cooling methods. However, in case of replication for nano-patterned structures, it caused several defects such as air-flow mark, non-fill, sticking and tearing. In this study, periodic nano-scale patterns are replicated by using injection molding with Peltier devices. Porous nano-scale patterns, which have pore diameter range from 120nm to 150nm, were fabricated by using anodizing process. Periodic nano-pore structures ( $20mm\;{\times}\;20mm$) were used as a mold stamp of injection molding. Finally, PMMA with nanopillar arrays was obtained by injection molding process. By using the Peltier devices, the temperature of locally adiabatic molds can be dramatically controlled and the quality of the molded patterns can be slightly improved.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1473-1475
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• 2006

The electro-optic properties of an active-matrix polymer network liquid crystal display (AM-PNLCD) with crossed polarizer films to improve its contrast ratio were evaluated. By using crossed polarizer films, it shows good contrast ratio as well as wide viewing angle and adequate response time at normal TFT-twisted nematic (TN) LCD driving voltage (2.8V).

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.270.1-270.1
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.202-205
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• 2002

The photoluminescence (PL) characteristics of the silicon-oxygen(Si-O) superlattice formed by molecular beam epitaxy (MBE) were studied. To confirm the presence of the nanocrystalline Si structure, Raman scattering measurement was performed. The blue shift was observed in the PL peak of the oxygen-annealed sample, compared to the hydrogen-annealed sample, which is due to a contribution of smaller crystallites. Our results determine the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high-speed and low-power silicon MOSFET devices in the future.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.668-672
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.189-192
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• 2004

To improvement life-time of the organic light emitting diodes(OLEDs). We investigate the inorganic composite film based on MgO and $SiO_2$ to protect from the moisture and oxygen. The inorganic composite films are added the base materials to the co-operate materials using the mixed process and it is deposited on plastic substrate by e-beam evaporator. In order to analyze as kinds of inorganic materials, Water Vapor method of Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR) are measured by Permatran equipment(MOCON Corp.). For comparison. an MgD- and $SiO_2$-based composite film has lower values of WVTR and OTR than inorganic composite/compound films of ones. The results obtained here shows that this film is suitable for passivation layer to extend the life-time of OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.430.2-430.2
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• 2014

Previous studies to enhance optical properties of opto-electronic devices involve patterning of inorganic materials. Patterning of inorganic material usually encompasses vacuum process that hinders productivity and increases cost. In this research, we successfully formed nano patterns with polymer matrix and fabricated photonic crystals. This process is anticipated to increase the performance of opto-electronic devices without any vacuum process. Moreover, nano imprint technology reduces cost and bolsters productivity.