• 센서학회지
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• 제19권1호
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• pp.25-30
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• 2010

This paper presents a low noise CMOS regulator for a low power capacitive sensor interface in a $0.5{\mu}m$ CMOS standard technology. Proposed LDO regulator circuit consist of a voltage reference block, an error amplifier and a new buffer between error amplifier and pass transistor for a good output stability. Conventional source follower buffer structure is simple, but has a narrow output swing and a low S/N ratio. In this paper, we use a 2-stage wide band OTA instead of source follower structure for a buffer. From SPICE simulation results, we got 0.8 % line regulation and 0.18 % load regulation.

• 센서학회지
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• 제17권1호
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• pp.41-52
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• 2008

In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{\mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.

• 한국분말재료학회지
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• 제17권4호
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• pp.295-301
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• 2010

Multi shell graphite coated Ag nano particles with core/shell structure were successfully synthesized by pulsed wire evaporation (PWE) method. Ar and $CH_4$ (10 vol.%) gases were mixed in chamber, which played a role of carrier gas and reaction gas, respectively. Graphite layers on the surface of silver nano particles were coated indiscretely. However, the graphite layers are detached, when the particles are heated up to $250^{\circ}C$ in the air atmosphere. In contrast, the graphite coated layer was stable under Ar and $N_2$ atmosphere, though the core/shell structured particles were heated up to $800^{\circ}C$. The presence of graphite coated layer prevent agglomeration of nanoparticles during heat treatment. The dispersion stability of the carbon coated Ag nanoparticles was higher than those of pure Ag nanoparticles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.236.1-236.1
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• 2015

The surface morphology of front transparent conductive oxide (TCO) films is very important to achieve high current density in amorphous silicon (a-Si) thin film solar cells since it can scatter the light in a better way. In this study, we present the low cost hydrothermal deposited uniform zinc oxide (ZnO) nano-flower structure with various aspect ratios for a-Si thin film solar cells. The ZnO nano-flower structures with various aspect ratios were grown on the RF magnetron sputtered AZO films. The diameters and length of the ZnO nano-flowers was controlled by varying the annealing time. The length of ZnO nano-flowers were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The ZnO nano-flowers with higher surface area as compared to conventional ZnO nano structure are preferred for the better light scattering. The conductivity and crystallinity of ZnO nano-flowers can be enhanced by annealing in hydrogen atmosphere at 350 oC. The vertical aligned ZnO nano-flowers showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nano-flowers. Therefore, we proposed low cost and vertically aligned ZnO nano-flowers for the high performance of thin film solar cells.

• 대한기계학회논문집A
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• 제29권7호
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• pp.998-1004
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• 2005

A nano-stereolithography (NSL) process has been developed for fabrication of 3D shell structures which can be applied to various nano/micro-fluidic devices. By the process, a complicated 3D shell structure on a scale of several microns can be fabricated using lamination of layers with a resolution of 150 nm in size, so it does not require the use of my sacrificial layer or any supporting structure. A layer was fabricated by means of solidifying liquid-state monomers using two-photon absorption (TPA) induced using a femtosecond laser processing. When the polymerization process is finished, unsolidified liquid state resins can be removed easily by dropping several droplets of ethanol fur developing the fabricated structure. Through this work, some 3D shell structures, which can be applied to various applications such as nano/micro-fluidic devices and MEMS system, were fabricated using the developed process.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.183-187
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• 2009

The structure of nano-crystalline $MnFe_2O_4$ was determined and refined with electron powder diffraction data employing the Rietveld refinement technique. A nano-crystalline sample (with average crystal size of about 10.9 nm) was characterized by selected area electron diffraction in an energy-filtering transmission electron microscope operated at 120 kV. All reflection intensities were extracted from a digitized image plate using the program ELD and then used in the course of structure refinements employing the program FULLPROF for the Rietveld analysis. The final structure was refined in space group Fd-3m (# 227) with lattice parameters a=8.3413(7) $\AA$. The reliability factors of the refinement are $R_F$=7.98% and $R_B$=3.55%. Comparison of crystallographic data between electron powder diffraction data and reference data resulted in better agreement with ICSD-56121 rather than with ICSD-28517 which assumes an initial structure model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.307-307
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• 2008