• Title/Summary/Keyword: nano imprint lithography

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Fabrication of High-transparent and Self-cleaning Solar Cell Protection Film (고투과성 및 자정기능을 가지는 태양전지 보호필름의 제작)

  • Lee, Seong-Hwan;Han, Kang-Soo;Shin, Ju-Hyeon;Hwang, Seon-Yong;Lee, Heon
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.75.1-75.1
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    • 2011
  • 화석연료의 고갈과 온실가스 배출의 증가로 지속 가능한 친환경 에너지 생산이 요구되는 가운데, 태양광 발전은 이러한 조건을 만족시키는 에너지 생산 방안으로 주목받고 있다. 태양광 발전은 태양 직사광을 이용한 발전 방법 때문에 실외에 설치되어야 하며 이에 따라 외부의 충격이나 오염물질로부터 태양전지 패널을 보호하기 위한 보호층이 필수적이다. 그러나 보호층에 의한 입사광의 반사 및 먼지나 황사에 의한 보호층의 오염 등은 태양전지의 발전 효율을 감소시키는 요인으로 작용하여 이에 대한 대응이 필요하다. 본 연구에서는 PET 필름에 나노 임프린트 리소그래피 및 핫 엠보싱 공정을 이용하여 moth-eye 반사방지 패턴을 형성함으로써 보호층에서의 입사광 반사를 억제하였다. 또한, 이러한 반사방지 패턴에 초소수성 자기조립단분자막을 코팅하여 표면 에너지를 낮춤으로써 먼지 및 황사에 의해 오염되었을 경우에도 빗물에 의해 오염 물질이 쉽게 씻겨 내릴 수 있는 자정기능을 부여하였다. 이러한 반사방지를 통한 입사광 투과량의 향상 및 초소수성 표면에 의한 자정작용에 의하여 태양전지의 발전 효율이 증가되었다.

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Oxidative Etching of Imprinted Nanopatterns by Combination of Vacuum Annealing and Plasma Treatment

  • Park, Dae Keun;Kang, Aeyeon;Jeong, Mira;Lee, Jae-Jong;Yun, Wan Soo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.251.1-251.1
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    • 2013
  • Combination of oxidative vacuum annealing and oxygen plasma treatment can serve as a simple and efficient method of line-width modification of imprinted nanopatterns. Since the vacuum annealing and oxygen plasma could lead mass loss of polymeric materials, either one of the process can yield a narrowed patterns. However, the vacuum annealing process usually demands quite high temperatures (${\geq}300^{\circ}C$) and extended annealing time to get appreciable line-width reduction. Although the plasma treatment may be considered as an effective low temperature rapid process for the line-width reduction, it is also suffering for the lowered controllability on application to very fine patterns. We have found that the vacuum annealing temperature can be lowered by introducing the oxygen in the vacuum process and that the combination of oxygen plasma treatment with the vacuum annealing could yield the best result in the line-with reduction of the imprinted polymeric nanopatterns. Well-defined line width reduction by more than 50% was successfully demonstrated at relatively low temperatures. Furthermore, it was verified that this process was applicable to the nanopatterns of different shapes and materials.

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The effect of wafer deformation on UV-nanoimprint lithography using an EPS(elementwise patterned stamp) (EPS(elementwise patterned stamp)활용 UV나노임프린트 공정에서의 웨이퍼 미소변형의 영향)

  • Sim Young-suk;Jeong Jun-ho;Sohn Hyonkee;Lee Eung-sug;Fang Lingmei;Lee Sang-chan
    • Journal of the Korean Vacuum Society
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    • v.14 no.1
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    • pp.35-39
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    • 2005
  • In the UV-NIL process using an elementwise patterned stamp (EPS), which includes channels formed to separate each element with patterns, low-viscosity resin droplets with a nano-liter volume are dispensed on all elements of the EPS. Following pressing of the EPS, the EPS is illuminated with UV-light to cure the resin; and then the EPS is separated from several thin patterned elements on a wafer. Experiments on UV-NIL were performed on an EVG620-NIL. 50 - 100nm features of the EPS with 3m channels were successfully transferred to 4 in. wafers. Especially, the wafer deformation during imprint was analyzed using the finite element method (FEM) in order to study the effect of the wafer deformation on the UV-NIL using EPS.

A Study on the Effects of Surface Patterns on Droplet Impingement Behaviors (액적 충돌 거동에 대한 표면 패턴의 영향에 관한 연구)

  • Jeon, Min Kyeong;Kim, Doo-In;Kang, Shinill;Jeong, Myung Yung
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.4
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    • pp.107-112
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    • 2016
  • In this paper, the hydrophobic rough surfaces were prepared by employing a conventional nano-imprint lithography technique, and the effects of surface parameter, ratio of the top surface to the flat unit cell, on the impingement behaviors of liquid droplet were investigated to improve robustness of hydrophobic functionality. The critical height defined for the transition from rebound to fragmentation is measured by droplet impingement test in order to study dynamic behavior of an impinged droplet. It showed the critical height decreased with high surface parameter while it increased with low surface parameter. However, the critical height decreased again as surface parameter decreased further. Observed results suggest that the optimized surface pattern should be designed for the increased critical height.

Fabrication and Analysis of a Free-Standing Carbon Nanotube-Metal Hybrid Nanostructure (개별 수직성장된 나노튜브와 금속의 복합 구조체 제작 및 분석)

  • Chang, Won-Seok;Hwang, Jun-Yeon;Han, Chang-Soo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.1
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    • pp.25-29
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    • 2012
  • The properties of carbon nanotube-metal hybrid nanostructures are critically dependent on the structure and chemistry of the metal-carbon nanotube interface. In this study, the interface between nickel and multi-walled carbon nanotubes (CNTs) has been investigated using physical vapor-deposited (sputter-deposited) nickel onto the surface of freestanding carbon nanotube arrays processed by nano-imprint lithography (NIL). These interfaces have been characterized by transmission electron microscopy and 3D atom probe tomography. In the nickel nanocrystals growing on the CNT surface, a metastable hexagonal $Ni_3C$-types phase appears to be stabilized. The structural stability of the nickel-CNT interface is also discussed and related to potential implications for the properties of these nanocomposites.

UV 나노임프린트 리소그래피의 Quartz 기판상의 Resin mold 제거를 위한 Hybrid 세정공정에 관한 연구

  • Jo, Yun-Sik;Kim, Min-Su;Gang, Bong-Gyun;Kim, Jae-Gwan;Lee, Byeong-Gyu;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.81.1-81.1
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    • 2012
  • 나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

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Fabrication of Hot Embossing Plastic Stamps for Microstructures (마이크로 구조물 형성을 위한 핫 엠보싱용 플라스틱 스탬프 제작)

  • Cha Nam-Goo;Park Chang-Hwa;Lim Hyun-Woo;Park Jin-Goo;Jeong Jun-Ho;Lee Eung-Sug
    • Korean Journal of Materials Research
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    • v.15 no.9
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    • pp.589-593
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    • 2005
  • Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.