• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.2
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• pp.198-209
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• 2012

The present paper reviews the widely used surface microstructural investigation technique and micro/nano nondestructive evaluation(NDE) technique which is able to evaluate the surface and subsurface. In general, the micro/nano defects and microstructural state of surface have great influence on the mechanical, physical, and chemical properties of bulk materials. The investigation technique of surface microstructure is possible to evaluate the defects and microstructural state with high reliability. The various applications and developments of each inspection technique have been introduced. Consequently, it is thought that the technique developments and applications of micro/nano NDE in nondestructive industries are extensively possible hereafter.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.16.2-16.2
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• 2006

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2002.01a
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• pp.6-6
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• 2002

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.537-543
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• 2002

This paper examines a new in-process measurement system for the measurement of micro-defects on the surfaces of brittle materials by using the AFM (Atomic Force Microscopy). A new AFM scanning stage that can also perform nano-scale bending of the sample was developed by adding a bending unit to a commercially available AFM scanner. The bending unit consists of a PZT actuator and sample holder, and can perform static and cyclic three-point bending. The true bending displacement of the bending unit is approximately 1.8mm when 80 volts are applied to the PZT actuator. The frequency response of the bending unit and the stress on the sample were also analyzed, both theoretically and experimentally. Potential surface defects of the sample were successfully detected by this measurement system. It was confirmed that the number of micro-defects on a scratched surface increases when the surface is subjected to a cyclic bending load.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.474-474
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• 2011

Graphene is considered as a potential candidate for the key material in the ideal 2D nanoelectronics. Recently, it is reported that graphene has an interesting sensitivity to molecular adsorption on it. Such properties are believed to be enhanced by the existence of disorders and ripples inside graphene as well as by the interaction with the substrate underneath. Here, we report the effect of introducing structural disorders to the graphene on its electrical properties such as conductance, transconductance, low frequency noise, which can be successfully described by a simple model of the continuum percolation. In addition, the response of the graphene device to gaseous molecular adsorption was systematically investigated and the results were discussed along with the change in Raman spectra.

• Advances in nano research
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• v.16 no.1
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• pp.91-109
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• 2024

Carbon nanotubes are drawing wide attention of research communities and several industries due to their versatile capabilities covering mechanical and other multi-physical properties. However, owing to extreme operating conditions of the synthesis process of these nanostructures, they are often imposed with certain inevitable structural deformities such as single vacancy and nanopore defects. These random irregularities limit the intended functionalities of carbon nanotubes severely. In this article, we investigate the mechanical behaviour of double-wall carbon nanotubes (DWCNT) under the influence of arbitrarily distributed single vacancy and nanopore defects in the outer wall, inner wall, and both the walls. Large-scale molecular simulations reveal that the nanopore defects have more detrimental effects on the mechanical behaviour of DWCNTs, while the defects in the inner wall of DWCNTs make the nanostructures more vulnerable to withstand high longitudinal deformation. From a different perspective, to exploit the mechanics of damage for achieving defect-induced shape modulation and region-wise deformation control, we have further explored the localized longitudinal and transverse spatial effects of DWCNT by designing the defects for their regional distribution. The comprehensive numerical results of the present study would lead to the characterization of the critical mechanical properties of DWCNTs under the presence of inevitable intrinsic defects along with the aspect of defect-induced spatial modulation of shapes for prospective applications in a range of nanoelectromechanical systems and devices.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.12-15
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• 2008

Nano-sized dots have been formed on the buffered metal substrates using the novel approach of the electro-spray deposition, to modulate the substrate surface and induce the columnar defects in REBCO films grown on it. The $BaZrO_3$ precursor solution was synthesized and electro-sprayed out onto the negatively charged substrate surface. Using the electrostatic force, nano-sized dots can be grown and uniformly distributed on the buffered metal substrate. The height of BZO nanodots was observed above the 200nm, which are beneficial to induce the columnar defects onto the BZO as a seed. The density of BZO nanodots was also investigated and ${\sim}7.8/{\mu}m^2$ was obtained. As the deposition distance of electro-spray was shortened there was ${\sim}8times$ increase of density of nanodots. The optimization of process variables in electro-spray deposition are discussed in respect to the superconducting REBCO films processed by the Metal-Organic Deposition with the effective flux pinning properties.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.371-374
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• 2007

A method for metal nano powder imprinting is proposed as a patterning process for conductive tracks that is inexpensive and scalable down to the nanoscale. Conductive tracks with line widths of $0.5{\sim}20{\mu}m$ were fabricated using this method. The processing conditions were optimized to avoid various types of defects, and to increase the degree of sintering and electric conductivity of the imprinted conductive tracks. The mean electric resistivity of the conductive tracks imprinted under optimum conditions was $8.95{\mu}{\Omega}{\cdot}cm$, which is in the range required for practical applications.