• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.20 no.4
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• pp.274-279
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• 2008

In the perspective of saving energy in buildings, high performance of insulation and air tightness for improving the heating and the cooling efficiency has brought the positive effect in an economical view. However, these building energy saving technologies cause the lack of ventilation, which is the direct cause of increasing the indoor contaminants, and it is also very harmful to residents because they spend over 90% of their time in the indoor area. Therefore, the ventilation is important to keep indoor environment clean and it can also save energy consumption. In this study, a HEPA type breathing wall is designed as a passive ventilation system to collect airborne particles and to supply fresh outdoor air. To make fine porous structures, polymer nano fibers which were made by electro spinning method are used as a precursor. The nano fibers are coated with SiO2 nano particles and finally the HEPA type breathing wall is made by sintering in the electric furnace at $300\sim500^{\circ}C$. The pressure drops of nano ceramic structure are 8.2, 25.5 and 44.9 mmAq at the face velocity of 2.0, 5.9 and 8.8 cm/s, respectively. Also the water vapor permeability is $3.6g/m^2{\cdot}h{\cdot}mmHg$. In this research, the porous nano ceramic structures are obtained and the possibility for the usage of a material for HEPA type breathing wall can be obtained.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.463-469
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• 2012

Solar thermochemical syngas and hydrogen production process bv redox system of metal oxide was performed under direct irradiation of the metal oxide on the SiC ceramic foam device using solar simulator. $CeO_2/ZrO_2$ nanotube has been synthesized by anodic oxidation method. Syngas and hydrogen production process is one of the promising chemical pathway for storage and transportation of solar heat by converting solar energy to chemical energy. The produced syngas had the $H_2/CO$ ratio of 2, which was suitable for methanol synthesis or Fischer-Tropsch synthesis process. After ten cycles of redox reaction, $CeO_2$ was analyzed using XRD pattern and SEM image in order to characterize the physical and chemical change of metal oxide at the high temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.291-291
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• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.2-278.2
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• 2014

We have investigated the highly flexible and transparent Si-doped $In_2O_3$(ISO)/Ag/ISO multilayer grown on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering system. The electrical and optical properties of ISO/Ag/ISO multilayer electrodes depended on the insertion of a nano-size Ag layer. Due to the high conductivity of a nano-size Ag layer, the optimized ISO/Ag/ISO multilayer electrodes showed the lowest resistivity of $3.679{\times}10^{-5}Ohm-cm$, even though the ISO/Ag/ISO multilayer electrodes was sputtered at room temperature. Furthermore, the ISO/Ag/ISO multilayer electrodes exhibited a high transmittance of 86.33%, because of the anti-reflection effect, comparable to Sn-doped $In_2O_3$ (ITO) electrodes. In addition, the ISO/Ag/ISO multilayer electrodes had a very smooth surface morphology without surface defects and showed good flexibility. The flexible OSCs fabricated on ISO(30nm)/Ag(8nm)/ISO(30nm) multilayer electrode showed a power conversion efficiency of 3.272%. This result indicates that the ISO/Ag/ISO multilayer is a promising transparent conducting electrode for flexible OSCs.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.91-91
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• 2009

In the past decade, Pd based thin films have been studied far hydrogen gas sensors due to their high possibility for energy industry and environmental applications. In this work, we report a navel method to fabricate highly sensitive hydrogen gas sensors based on PdO thin films. The films were deposited on Si substrates in Ar and $O_2$ ambient using reactive sputtering system. A semiconductor process has been utilized to fabricate PdO films with t=40nm. We observed the resistance changes of the PdO films with various $H_2$ concentrations. It was found that the electrical properties of the thin films depend on the composition of oxygen. The sensitivity is defined as $S\;=\;(R_0-R)/R{\times}100%$, where R and $R_0$ are the resistances in the presence of exposing the hydrogen gas and air, respectively. The sensitivity of the thin films was found to be as high as about 95%. After exposing to hydrogen gas, we discovered that the nano-sized cracks formed on the surface of the PdO thin films. The nano-cracks formed in deoxidized PdO thin films were known by playing a key role to reduce more than 4 times the response time of absorption. Our results illustrate that the deoxidized PdO thin films can be used as hydrogen sensors.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.303-310
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• 2008

We fabricated hydrogenated amorphous silicon(a-Si:H) 140 nm thick film on a $180\;nm-SiO_2/Si$ substrate with an inductively-coupled plasma chemical vapor deposition(ICP-CVD) equipment at $250^{\circ}C$. Moreover, 30 nm-Ni film was deposited with a thermal-evaporator sequently. Then the film stack was annealed to induce silicides by a rapid thermal annealer(RTA) at $200{\sim}500^{\circ}C$ in every $50^{\circ}C$ for 30 minuets. We employed a four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), and scanning probe microscope(SPM) in order to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure evolution, and surface roughness, respectively. We confirmed that nano-thick high resistive $Ni_3Si$, mid-resistive $Ni_2Si$, and low resistive NiSi phases were stable at the temperature of <300, $350{\sim}450^{\circ}C$, and >$450^{\circ}C$, respectively. Through SPM analysis, we confirmed the surface roughness of nickel silicide was below 12 nm, which implied that it was superior over employing the glass and polymer substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.246-249
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• 2013

Nano-sized ${\beta}$-SiC nanoparticles were synthesized combined with a sol-gel process and a carbothermal process. TEOS and carbon black were used as starting materials for the silicon source and carbon source, respectively. $SiO_2$ nanoparticles were synthesized using a sol-gel technique (Stober process) combined with hydrolysis and condensation. The size of the particles could be controlled by manipulating the relative rates of the hydrolysis and condensation reactions of tetraethyl orthosilicate (TEOS) within the micro-emulsion. The average particle size and morphology of synthesized silicon dioxide was about 100nm and spherical, respectively. The average particles size and morphology of the used carbon black powders was about 20nm and spherical, respectively. The molar ratio of silicon dioxide and carbon black was fixed to 1:3 in the preparation of each combination. $SiO_2$ and carbon black powders were mixed in ethanol and ball-milled for 12 h. After mixing, the slurries were dried at $80^{\circ}C$ in an oven. The dried powder mixtures were placed in alumina crucibles and synthesized in a tube furnace at $1400{\sim}1500^{\circ}C$ for 4 h with a heating rate of $10^{\circ}C$/min under flowing Ar gas (160 cc/min) and furnace cooling down to room temperature. SiC nanoparticles were characterized by XRD, TEM, and SAED. The XRD results showed that high purity beta silicon carbide with excellent crystallinity was synthesized. TEM revealed that the powders are spherical shape nanoparticles with diameters ranging from 15 to 30 nm with a narrow distribution.