• Steel and Composite Structures
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• v.27 no.4
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• pp.465-477
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• 2018

In this research, vibration and smart control analysis of a concrete foundation reinforced by $SiO_2$ nanoparticles and covered by piezoelectric layer on soil medium is investigated. The soil medium is simulated with spring constants and the Mori-Tanaka low is used for obtaining the material properties of nano-composite structure and considering agglomeration effects. With considering first order shear deformation theory, the total potential energy of system is calculated and by means of Hamilton's principle in three displacement directions and electric potential, the six coupled equilibrium equations are obtained. Also, based an analytical method, the frequency of system is calculated. The effects of applied voltage, volume percent and agglomeration of $SiO_2$ nanoparticles, soil medium and geometrical parameters of structure are shown on the frequency of system. Results show that with applying negative voltage, the frequency of structure is increased.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2023.05a
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• pp.99-100
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• 2023

In this study, an approach has been made to understand the effect of encapsulation thickness of the nanoencapsulated PCMs on the phase transition kinetics. Paraffin is encapsulated by silica via single pot polycondensation reaction. Different ratios of silica precursor are chosen to encapsulate paraffin. The obtained encapsulated PCMs are identified as nano sized, as well as with increasing silica precursor, thicker silica encapsulations have been manifested with shrinking core diameter. The synthesized PCMs are characterized using various characterization techniques. Isochronal kinetic studies are done in differential scanning calorimeter (DSC) to understand about their phase transformation behaviors. This study can appreciate the cognition of the large-scale applications of PCMs into the building constructions as well as the fundamental conception on the phase transition kinetics of PCMs can also be amended.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1353-1354
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• 2007

폴리 실리콘 층의 유무에 따른 금속-옥사이드-반도체(MOS) 구조의 소자를 제작하였다. 터널링 산화막과 블로킹 산화막으로는 $Al_{2}O_{3}$ 층을 증착하였으며, 원자층 증착법을 이용하여 제작하였다. 터널링 산화막 층의 두께에 따른 I-V와 C-V 특성을 측정하였다. 전자들이 폴리 실리콘 층에 저장됨에 따라 N-형의 I-V 특성이 관찰되었다. C-V 측정 시에는 반시계 방향의 히스테리시스 특성을 나타내었으며, 전압이 증가할수록 플랫-밴드 전압 이동 폭이 더욱 증가하였다. 이러한 전기적 특성은 전압의 이동에 따른 전자들이 터널링 산화막 층을 통하여 폴리 실리콘 내부에 저장되기 때문이다. 이를 특성들은 폴리 실리콘의 전하 저장 가능성을 보여주는 것이며, 터널링 산화막 층의 두께에 따른 전기적 특성 변화도 관찰하였다.

• Journal of information and communication convergence engineering
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• v.7 no.4
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• pp.530-534
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• 2009

C-axis-oriented ZnO thin films were successfully deposited on p-Si (100) in an RF magnetron sputtering system. Deposition conditions such as deposition power, working pressure, and oxygen gas ratio $O_2/(O_2+Ar)$ were varied. Crystalline structures of the deposited ZnO films were investigated by a scanning electron microscope (SEM) technique. Results show that the deposition parameters can have a strong impact on the preferred orientations and grain sizes of the deposited ZnO films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• Composites Research
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• v.33 no.6
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• pp.365-370
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• 2020

The icing formation at aircraft occur problems such as increasing weight of the body, fuel efficiency reduction, drag reduction, the error of sensor, and etc. The viscosity of polyurethane (PU) topcoat was measured at 60℃ in real time to set the pre-curing time. SiO2 nanoparticles were dispersed in ethanol using ultra-sonication method. The SiO2/ethanol solution was sprayed on PU topcoat that was not cured fully with different pre-curing conditions. Surface roughness of SiO2/PU nanocomposites were measured using surface roughness tester and the surface roughness data was visualized using 3D mapping. The adhesion property between SiO2 and PU topcoat was evaluated using adhesion pull-off test. The static contact angle was measured using distilled water to evaluate the hydrophobicity. Finally, the pre-curing time of PU topcoat was optimized to exhibit the hydrophobicity of SiO2/PU topcoat.

• Advances in nano research
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• v.4 no.3
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• pp.181-195
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• 2016

Addition of nano-$SiO_2$ (NS) to geopolymer composites has been studied through measurement of compressive strengths, FTIR and XRD analysis. Alumino-silicate materials are coarse aggregate included waste concrete and demolished walls with its cementing binder, cement kiln dust (CKD) used and can possess a pronouncing activation for the geopolymer reaction resulting from the high alkali contents within. Materials prepared at water/binder ratios in a range of 0.30: 0.40 under curing of $40^{\circ}C$ and 100% Relative Humidity (R.H.), while the used activator is sodium hydroxide in the ratio of 2 wt. %. First, CKD is added in the ratio from 10 up to 50 wt., %, and the demolished walls was varied depending on the used CKD content, while using constant ratio of waste concrete (40 wt., %). Second step, depending on the optimum CKD ratio resulted from the first one (40 wt. %), so the control geopolymer mix composed of cement kiln dust, demolished walls and waste concrete in the ratio (40:20:40, wt %). Nano-silica partially replaced waste concrete by 1 up to 8%. Results indicated that, compressive strengths of geopolymer mixes incorporating nano-silica were obviously higher than those control one, especially at early ages and specially with 3%NS.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.179-183
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• 2009

Toluene($C_6H_5CH_3$) gas sensors were fabricated using $PtO_x$ loaded with SWNTs by a new deposition method. The nanoparticle powders of SWNTs-$PtO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against toluene gas which is a kind of the Volatile Organic Compounds. The composition ratio that exhibited the highest response to toluene gases was SWNTs : $PtO_x\;=\;99:1$ in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times of the sensors were as short as less than 1 min., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.47-50
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• 2002

ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.