• Title/Summary/Keyword: n-well thickness

Search Result 270, Processing Time 0.031 seconds

The Effects of Leg Muscles and Tendon Thickness on 7Hz Vibration Exercise Application in the Normal Adult (7Hz 진동자극 운동이 정상 성인의 다리 근육과 힘줄의 두께에 미치는 영향)

  • Park, Jae-Cheol;Yoo, Jin-Ho;Hwang, Tae-Yeon
    • PNF and Movement
    • /
    • v.18 no.3
    • /
    • pp.425-433
    • /
    • 2020
  • Purpose: The purpose of this study was to investigate the effect of 7Hz vibration on the thickness of the rectus femoris, medial femur, rectus femoris tendon, and Achilles tendon. Methods: The statistical methods before and after working around the average value of each of the legs included repeated measures ANOVA. The subjects were 26 males residing in the N area, and we measured the change in muscle thickness and tendon thickness before, four weeks, and eight weeks after the experiment in two groups of 13 subjects each. The analysis method was a two-way repeated measurement variance analysis (ANOVA) with a significance level of 0.05 Results: The rectus femoris, medial broad muscle, rectus femur, and Achilles tendon showed significant increases in the interaction between the periods as well as between the periods and groups (p < 0.05). Conclusion: As a result of this study, the 7Hz vibration had a positive effect on the thickness of the rectus femoris and the vastus medialis muscle as well as the thickness of the rectus femoris tendon and Achilles tendon. It is expected to be used as basic data for vibrational exercises in the future studies and is expected to be used as an exercise to strengthen the leg muscles and tendons.

On the AR Coating Method of Al-MIS(p-Si) Solar Cel (Al-MIS(p-Si) 태양전지의 AR Coating 방법)

  • 엄경숙;백수현
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.21 no.6
    • /
    • pp.64-69
    • /
    • 1984
  • We found that the maximum efficiency of Al-MIS (p-Si) solar ceil was shown at 80$\AA$ thickness of Al-film which was deposited with slower velocity than 0.6$\AA$/sec. It was coated with ZnS and SiO for Anti-Reflecting. In single coating, ZnS and SiO film had maximum Isc at 570 and 690 A thickness, respectively. We confirmed that these results agreed well with the quarter coating condition; n1d1=λ/4. In double coating, we held the one layer with its optimum thickness in single coating and controlled the other layer. The maximum value of Isc in this case was almost the same with it in single coating but was maintained its value in so wide range of thickness. Keeping the relation; n1d1=n2d2 as another way, we made the total thickness of film thinner to 70-90% of the sum of each optimum thickness in single coating. In this case Isc was higher value than 20% of it in any other previous case and was retained so wide range of thickness.

  • PDF

The Chemical Vapor Deposition of TiN on Cemented Tungsten Carbide Cutting Tools (초연합금절단공구상에 TiN의 화학증착피막에 관한 연구)

  • 이상래
    • Journal of the Korean institute of surface engineering
    • /
    • v.15 no.3
    • /
    • pp.138-145
    • /
    • 1982
  • The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

  • PDF

Characteristic analysis of GaN-based Light Emitting Diode(LED) (GaN 기반 발광 다이오드(LED)의 특성 분석)

  • Lee, Jae-Hyun;Yeom, Kee-Soo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2012.05a
    • /
    • pp.686-689
    • /
    • 2012
  • In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

  • PDF

Relative Parameter Contributions for Encapsulating Silica-Gold Nanoshells by Poly(N-isopropylacrylamide-co-acrylic acid) Hydrogels

  • Park, Min-Yim;Lim, Se-Ra;Lee, Sang-Wha;Park, Sang-Eun
    • Macromolecular Research
    • /
    • v.17 no.5
    • /
    • pp.307-312
    • /
    • 2009
  • Core-shell hydrogel nanocomposite was fabricated by encapsulating a silica-gold nanoshell (SGNS) with poly(N-isopropylacrylamide-co-acrylic acid) (PNIPAM-co-AAc) copolymer. The oleylamine-functionalized SONS was used as a nanotemplate for the shell-layer growth of hydrogel copolymer. APS (ammonium persulfate) was used as a polymerization initiator to produce a hydrogel-encapsulated SGNS (H-SGNS). The amounts of NIPAM (N-isopropylacrylamide) monomers were optimized to reproduce the hydrogel-encapsulated SGNS. The shell-layer thickness was increased with the increase of polymerization time and no further increase in the shell-layer thickness was clearly observed over 16 h. H-SGNS exhibited the systematic changes of particle size corresponding to the variation of pH and temperature, which was originated from hydrogen-bonding interaction between PNIPAM amide groups and water, as well as electrostatic forces attributed by the ionization of carboxylic groups in acrylic acid.

Determination of temperature and flux variations during ultra-thin InGaN quantum well growth on a 2" wafer for GaN Green LED

  • Kim, Hyo-Jeong;Kim, Min-Ho;Jeong, Hun-Yeong;Lee, Hyeon-Hwi
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.149-149
    • /
    • 2010
  • The origin of the inhomogeneous distribution of photoluminescence (PL) peak wavelength on a commercial 2" GaN wafer for green light emitting diode has been investigated by wide momentum transfer (Q) range x-ray diffraction (XRD) profile of InGaN/GaN multiple quantum wells. Near the GaN (0004) Bragg peak, wide-Q range XRD (${\Delta}Q$ > $1.4{\AA}-1$) was measured along the growth direction. Wide-Q XRD gives precise and direct information of ultra-thin InGaN quantum well structure. Based on the QW structural information, the variation of PL spectra can be explained by the combined effect of temperature gradient and slightly uneven flow of atomic sources during the QW growth. In narrow variations of indium composition and thickness of QW, an effective indium composition can be a good character to match structural data to PL spectra.

  • PDF

Trench-gate SOI LIGBT with improved latch-up capability (향상된 Latch-up 특성을 갖는 트렌치 게이트 SOI LIGBT)

  • 이병훈;김두영;유종만;한민구;최연익
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.32A no.1
    • /
    • pp.103-110
    • /
    • 1995
  • Trench-Gate SOI LIGBT with improved latch-up capability has been proposed and verified by MEDICI simulation. The new SOI LIGBT exhibits 6 time larger latch-up capability of the new device is almost preserved independent of lifetime. the large latch-up capability of the new SOI LIGBT may be realized due to the fact that the hole current in the new device would bypass through the shorted cathode contact without passing the p-well region under the n+ cathode. Forward voltage drop is increased by 25% when a epi thickness is 6$\mu$m. However, the increase of the forward voltage is negligible when the epi thickness is increased to 10$\mu$m. It is found that the swithcing time of the new device is almost equal to the conventional devices. Evaluated breakdown voltage of proposed SOILIGBT is 250 V and that of the conventional SOI LIGBT is 240 V, where the thickness of the vuried oxide and n- epi is 3$\mu$m and 6$\mu$m, respectively.

  • PDF

The Effect of Trunk Strengthening Exercise using Oscillation on Trunk Muscle Thickness and Balance (진동을 이용한 몸통 근력 운동이 몸통근 두께와 균형에 미치는 영향)

  • Cho, Woon-Su;Park, Chi-Bok;Lim, Jae-Heon
    • Journal of the Korean Society of Physical Medicine
    • /
    • v.12 no.2
    • /
    • pp.91-101
    • /
    • 2017
  • PURPOSE: The aim of this study was to verify the effect of trunk strengthening exercise using oscillation by comparing trunk muscle thickness, as well as balance of healthy adults during exercises performed with an oscillatory device and non-oscillatory device. METHODS: Twenty-two participants were randomly assigned to one of two groups: the trunk strengthening exercise using oscillation (TSEO) group (n=11) or the trunk strengthening exercise using non-oscillation (TSEN) group (n=11). Subjects in all groups performed the exercises three days per week for 6 weeks. All subjects performed four types of exercises: pull over, seated twist, power push, and diagonal power plank. Trunk muscle thickness of the rectus abdominis (RA), internal oblique (IO), external oblique (EO), transverse abdominis (TrA), and multifidus (MT) were measured with an ultrasonography. The balance ability were evaluated using the Romberg test with eyes open, eyes closed, one-leg standing test (OLST), and limits of stability (LOS). All tests were performed before the intervention, as well as after 6 weeks and 8 weeks of exercises. RESULTS: There was a significant difference of RA, IO, TrA, and MT according to the main effect of the time (p<.05). There was a significant difference of IO and LOS according to interaction effect between the time and group (p<.05). CONCLUSION: As intended, the cyclic forces induced by the oscillating device did increase trunk muscle thickness. However, the effect was limited and significant only for the IO muscle. Combining trunk strengthening exercise with oscillation appears to be more effective in improving dynamic balance.

The effect of different cooling rates and coping thicknesses on the failure load of zirconia-ceramic crowns after fatigue loading

  • Tang, Yu Lung;Kim, Jee-Hwan;Shim, June-Sung;Kim, Sunjai
    • The Journal of Advanced Prosthodontics
    • /
    • v.9 no.3
    • /
    • pp.152-158
    • /
    • 2017
  • PURPOSE. The purpose of this study was to evaluate the influence of different coping thicknesses and veneer ceramic cooling rates on the failure load of zirconia-ceramic crowns. MATERIALS AND METHODS. Zirconia copings of two different thicknesses (0.5 mm or 1.5 mm; n=20 each) were fabricated from scanning 40 identical abutment models using a dental computer-aided design and computer-aided manufacturing system. Zirconia-ceramic crowns were completed by veneering feldspathic ceramics under different cooling rates (conventional or slow, n=20 each), resulting in 4 different groups (CONV05, SLOW05, CONV15, SLOW15; n=10 per group). Each crown was cemented on the abutment. 300,000 cycles of a 50-N load and thermocycling were applied on the crown, and then, a monotonic load was applied on each crown until failure. The mean failure loads were evaluated with two-way analysis of variance (P=.05). RESULTS. No cohesive or adhesive failure was observed after fatigue loading with thermocycling. Among the 4 groups, SLOW15 group (slow cooling and 1.5 mm chipping thickness) resulted in a significantly greater mean failure load than the other groups (P<.001). Coping fractures were only observed in SLOW15 group. CONCLUSION. The failure load of zirconia-ceramic crowns was significantly influenced by cooling rate as well as coping thickness. Under conventional cooling conditions, the mean failure load was not influenced by the coping thickness; however, under slow cooling conditions, the mean failure load was significantly influenced by the coping thickness.

Analysis of Electrical/optical Characteristics Using Asymmetric MQW Structures for Deep-UV LEDs (비대칭 MQW 구조를 이용한 Deep-UV LED의 전기적/광학적 특성)

  • Son, Sung-Hun;Kim, Su-Jin;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.49 no.5
    • /
    • pp.10-15
    • /
    • 2012
  • In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.