• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.344-349
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• 2005

This paper is studied on the effect of TiAlN coated ball end mill on cutting characteristic of high hardness steels in dry cutting condition without coolant. KP4 steels[HRC32] and STD11[HRC60] heat treated steels wert: used as the workpiece and WC-Co ball end mill and single and multi layer TiAlN coated ball end mill were utilized. Results showed that TiAlN coated ball end mill were increased the cutting length than WC-Co ball end mill in the cutting speed$[245\~320m/min]$ about $2\~5$ times for KP4 steels and about $2.7\~4.3$ times for STD11 heat treated steels. The multi layer TiAlN coated ball end mill is good about $1.2\~1.7$ times for KP4 steels and STD11 steels than single layer coated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.434-435
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• 2007

We have demonstrated the characteristics on the variation of hole transporting layer in blue organic light-emitting diodes (OLEDs) using new blue fluorescent emitter. We fabricated two types of hole transporting layer structures that one is 4,4',4"-Tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine (2-TNATA) of $600{\AA}$ as a hole injection layer, N,N'-diphenyl-N,N'- (2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) of $200{\AA}$ as a hole transporting layer and another device is NPB of $500{\AA}$ without the 2-TNATA. The devices without the 2-TNATA showed improved characteristic of the luminance and efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.150-150
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• 2010

비휘발성 메모리의 구조는 ONO($SiO_2$, $SiN_X$, $SiN_XN_Y$), 혹은 NNO($SiN_X$, $SiN_X$, $SiN_XN_Y$)등으로 구성된 blocking layer, charge storage layer, tunneling layer 등이 일반적이다. 본 연구에서 제작된 OSO구조는charge storage layer를 a-Si을 사용한 것으로, 기존에 사용되던 charge storage layer인 $SiN_x$ 대신에 a-Si:H 를 사용하였다. 최적의 전하 저장층 조건을 알기 위하여 가스비에 따른 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 전하 저장량 및 flatband 전압의 shift 값을 측정 및 분석하였다. 실험 결과, bandgap이 작아 band edge 저장 가능하며, SiNx 와 마찬가지로 a-Si:H 내 트랩에 저장이 가능하였다. 또한 $SiO_2$/a-Si:H와 a-Si:H/SiOxNy 계면의 결함 사이트에 전하의 저장되며, bandgap이 작아 트랩 또는 band edge에 위치한 전하들이 높은 bandgap을 가지는 blocking 또는 tunneling layer를 통하여 빠져 나오기 어려운 특성이 있었다. 본 연구에서는 최적의 전하 저장 층 조건을 알기 위하여 가스비에 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 flatband 전압의 shift 값을 측정하여 결과를 논의하였다. 또한 OSO 구조의 두께에 있어 MIS 결과와 poly-Si 상에 실제 제작된 NVM 소자의 switching 특성을 논의하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.26-27
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• 2001

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.57-62
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• 1996

To decrease the leakage current of $p^{+}n$ junction diode with hyperabrupt structure, the $3000{\AA}$ polysilicon was deposited on the top of conventional $p^{+}n$ diode and then annealed for 30 minutes at $900^{\circ}C$ in the $N_{2}$ ambient. It was estimated for both $p^{+}n$ diodes with and without polysilicon layer, and the impurity materials of n diffused layer to observe the influence of the polysilicon layer on leakage current characteristics. The leakage current was reduced to the order of 3 by using polysilicon layer. A large number of dislocation loops, which were believed to be generated by As-implanted diffused layer, were found to be removed by using polysilicon through TEM analysis.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.11 no.6
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• pp.120-129
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• 2008

Removal rate of $NO_3-N$ and TN in a free water surface wetland system with litter layer on its bottom was compared with that without one. The system was established on floodplain in the down reach of the Gwangju Stream in 2001. Its dimensions were 31 meters in length and 12 meters in width. Water of the stream was funneled into it and its effluent was discharged back into the channel. Average litter layer of 9.6 cm was formed on its bottom in 2007. The layer and above-ground parts of reeds and cattails on the system were eliminated in Spring 2008. Volumes and water quality of inflow and outflow of the system were analyzed from May to November in 2007 and 2008, respectively. Inflow into the system both in 2007 and 2008 averaged approximately $40m^3/day$ and hydraulic residence time both in 2007 and 2008 was about 1.5 days. Average influent $NO_3-N$ concentration in 2007 and 2008 was 2.16 and 2.05 mg/L, respectively and influent TN concentration in 2007 and 2008 averaged 3.98 and 3.89 mg/L, respectively. With a 0.05 significance level, effluent temperatures, influent concentrations of $NO_3-N$ and TN, and stem numbers per square meter and height of the emergent plants showed no difference between the system with litter layer and without one. $NO_3-N$ removal in the system with litter layer and without it averaged 55.59 and 46.06%, respectively and TN retention averaged 57.24 and 48.97%, respectively. Both $NO_3-N$ and TN abatement rates in the system with litter layer were significantly high (p < 0.001) when compared with those without one. The wetland system having litter layer on its bottom was more efficient for $NO_3-N$ and TN retention than that without one.

• Korean Journal of Acupuncture
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• v.33 no.2
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• pp.75-83
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• 2016

Objectives : A previous study demonstrated that the connecting points of three yang meridians attenuated changes of nNOS, and Norepinephrine(NE) in rats. The current study investigated the changes in nNOS, NO and NE upon the needle insertion at varying depths at the connecting point of three yin meridians of the hand. Methods : Needles were inserted into rats, on both left and right sides of the connecting point, including the LU7, HT5 and PC6 acupoints which are three yin meridians of the hand. After insertion, needles were retained for five minutes. Each acupuncture groups were treated acupuncture at each acupoint and at the depths of superficial, middle and deep layer. After the retention, blood was drawn via cardiac puncture, and tissues of each point near meridian vessel was extracted to examine the changes in the expression of nNOS, NO and NE. Results : Compared with the superficial layer group, nNOS production significantly decreased in the middle and deep layer at LU7 acupoint group and in the deep layer at HT5, PC6 acupoint group. The tissue NE decreased in the deep layer on PC6 acupoint and the plasma NE increased at the middle layer at LU7 acupoint group but decreased at the deep layer on at LU7 acupoint group. Conclusions : Acupuncture at connecting points of three yin meridians of the hand can regulate the activities of nNOS, and NE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1018-1021
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• 2003

We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.