• Economic and Environmental Geology
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• v.34 no.1
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• pp.39-53
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• 2001

Environmental pollution of the Tohyun mine creek area was investigated on the basis of geology, mineralogy and geochemistry. In soils and sediments of the mine area, ${Al_2}{O_3}/{Na_2O}$ and ${K_2}O/{Na_2}O$ ratios are partly negative correlation against ${SiO_2}/{Al_2}{O_3}$, respectively. Geochemical characteristics of some trace and rare earth elements such as V/Ni, Ni/Co, La/Ce, Th/Yb, Th/U, La/Th, ${La_N}/{Yb_N}$, La/Sc and Sc/Th are revealed a narrow range and homogeneous compositions may be explained by simple source lithology. These results suggest that sediments source of the host shale around the mine area could be originated by basic to intermediate igneous rocks. Mineral compositions of soil and sediment near the mine area were partly variable mineralogy, which are composed of quartz, mica, feldspar, chlorite, clay minerals and some pyrite. Soils and sediments with highly concentrated heavy minerals, gravity separated mineralogy, are composed of some pyrite, arsenopyrite, chalcopyrite, sphalerite, galena, goethite and various kinds of hydroxide minerals on the polished sections. As normalized by bed rock composition, average enrichment indices of major elements in sediments, precipitates, farmland soils and paddy soils are 1.0, 1.7, 0.9 and 0.8, respectively. Maximum concentration of environmental toxic elements in the mine creek are detected with Ag = 186 ppm, As = 17,100 ppm, Bi = ]27 ppm, Cd = 77 ppm, Cu = 12,299 ppm, Pb = 8,897 ppm, Sb = 1,350 ppm, W = 599 ppm and Zn = 12,250 ppm, which are increasing with total FeO increasing, and extremely high concentrations of surface sediments and precipitates near the waste rock dump. These toxic elements (As, Bi, Cd, Cu, Pb, Sb, W and Zn) of the samples, normalizing by host rock concentration, revealed that average enrichment index is 106.0 for sediments, 279.6 for precipitates, 3.5 for farmland soils and 1.6 for paddy soils. However, on the basis of EPA values, enrichment indices of all the samples are 40.7, 121.4, 1.3 and 0.6, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.583-583
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• 2012

최근 석유 자원의 고갈로 인한 대체자원의 관심이 커지면서 박막 태양전지에 대한 연구가 활발히 진행되고 있다. 기존의 단일 박막 태양전지는 Shockley-Queisser limit인 40.7%가 변환 효율의 최대값으로 한계가 정해져있다. 이 한계를 넘기기 위하여 현재 여러 층의 박막을 쌓은 tandem 태양전지, 양자점을 이용한 태양전지, 그리고 중간밴드계 태양전지가 제시되고 있다. 중간 밴드계 태양전지는 이론적으로 변환 효율이 63.2%에 달하며 제조 공정이 매우 용이하다는 장점을 가지고 있다. 이중에 ZnSe는 에너지밴드갭이 상온에서 2.7 eV를 가지고 있는 물질로서 파란색 빛을 내는 발광소자로 각광을 받고 있고, 산소를 주입했을 경우에 p형이 되는 성질과 자연적으로 n 형인 성질로 인해 박막 태양전지로 응용성에 대한 관심이 커지고 있다. 산소나 질소를 주입했을 경우 페르미준위 근처에서 중간밴드가 형성되었다는 연구결과들은 ZnTe(O)나 GaNAs를 통하여 확인되었으나, 현재까지 ZnSe를 이용한 중간밴드 태양전지에 대한 연구결과들은 거의 없는 상태이다. 본 연구에서는 ZnSe를 다양한 기판 온도에서 펄스레이저 증착법을 이용하여 성장하였고 성장하는 동안 산소 노출조건을 조절하여 깊은준위 에너지밴드형성에 대한 연구를 진행하였다. 성장온도와 산소 노출량에 따른 깊은준위에 대한 변화를 관찰하기 위하여 photoluminescence 스펙트럼을 분석하였으며, 박막의 품질에 대해 조사하기 위하여 X-ray diffraction을 이용하였다.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.858-862
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• 2013

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

• Proceedings of the Korean Nuclear Society Conference
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• 1999.05a
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• pp.34-34
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.100-100
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.89.4-89
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• 1998

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.645-652
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• 1991

The stability constants$(K_f)$ of the complexes of some transition and post-transition metal ions (Co(Ⅱ), Ni(Ⅱ), Cu(Ⅱ), Zn(Ⅱ), Cd(Ⅱ), Pb(Ⅱ), Hg(Ⅱ)) with $N_2O_3$-donor macrocyclic ligand, 1,15-diaza-3,4 : 12,13-dibenzo-5,8,11-trioxacyclooctadecane ($NtnOdienH_4$), have been determined by potentiometry in aqueous solution at $25^{\circ}C$. Log $K_f$ values of the complexes were : Co(Ⅱ): 3.83, Ni(Ⅱ) : 4.56, Cu(Ⅱ) : 7.74, Zn(Ⅱ) : 4.98, Cd(Ⅱ) : 3.91, Pb(Ⅱ) : 6.65, and Hg(Ⅱ) : 14.87. The order of stabilities of transition metal complexes was the same as the natural order of stability proposed by Williams-Irving. In post-transition metal complexes, the order of stabilities was Cd(Ⅱ) < Pb(Ⅱ) < Hg(Ⅱ), and the covalent character in metal ion-donor atoms bonds appeared a dominant factor in the stability. In methanol solution, each metal ion forms 1 : 1 complex, while Ni(Ⅱ) ion forms both 1 : 1 and 1 : 2 complexes. It was confirmed by $^1H-$ and $^{13}C-$NMR spectral study that the nitrogen atoms in the ligand were major contributors for the complexation of post-transition metal ions with the ligand. It was shown, by elementry analysis, electrical conductivity and magnetic susceptibility measurements, and spectral analysis, that solid Cu(Ⅱ)-and Zn(Ⅱ)-complexes have a distorted octahedral and a tetrahedral structure, respectively.

• Journal of the Korean Chemical Society
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• v.54 no.5
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• pp.541-550
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• 2010

A new $N_4O_3$ heptadentate ligand, N,N'-Bis(2-hydroxybenzyl)-1,3-bis[(2-aminoethyl)amino]-2-propanol(H-BAP 4HCl)was synthesized. The hydrochloric acid salts of Br-BAP 4HCl, Cl-BAP 4HCl, $CH_3O$-BAP 4HCl and $CH_3$-BAP 4HCl containing Br-, Cl-, H-, $CH_3O-$ and $CH_{3^-}$ groups at the para-site of the phenol group of the H-BAP were synthesized. The structures of the ligands were confirmed by C. H. N. atomic analysis and $^1H$ NMR, $^{13}C$ NMR, UV-visible and mass spectra. The elemental stepwise protonation constants(${logK_n}^H$) of the synthesized $N_4O_3$ ligands showed six steps of the proton dissociation. The orders of the overall dissociation constants($log{\beta}_p$) of the ligands were Br-BAP < Cl-BAP < H-BAP < $CH_3O$-BAP < $CH_3$-BAP. The orders agreed well with that of Hammett substituent constants($\sigma_p$). The calculated stability constants($logK_{ML}$) between the ligands and transition metal ions agreed well with the order of the overall proton dissociation constants of the ligands but they showed a reverse order in Hammestt substituent constants($\sigma_p$). The order of the stability constants between the transition metal ions with the ligands were Co(II) < Ni(II) < Cu(II) > Zn(II) > Cd(II) > Pb(II).