• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.17-19
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• 1991

Pastes consisting of $CdZnS_{1-y}Te_{y}$ powder, 20wt/o of $CdCl_2$as a sintering aid and appropriate amount of Propylene Glycol(P.G) have been coated on glass substrates and were sintered at the temperature of $625^{\circ}C$ to find energy band gap, transmittance and electrical properties of the sintered films. The resistivity of sintered film increases with increasing Te content. X-ray diffraction patterns show that $CdZnS_{0.9}Te_{0.1}$ sintered film is in the single film in the two phase region. The transmittance of the sintered film decreases with increasing the Te content.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.562-568
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• 2001

Devitrifiable solder glass/$ZrB_2$ sintered composites were prepared by using glass with the composition of $60ZnO-20B_2O_3-10SiO_2-10PbO$(in wt%) and $ZrB_2$, powder as starting materials under the $N_2$atmosphere. $ZrB_2$which the good conduction materials showed sensitive oxidation characteristics, because some parts of the $ZrB_2$in specimens changed into the insulated phase of $ZrO_2$. These Phenomena would be estimated that it caused a few amount of residual oxygen in the furnace and/or specimens and the coordination number change of $B_2O_3$ in the glass. The sintering temperature and the mixed ratios of each phase were control of large ranged the resistivity ranged from 10 to 10$^{3}{\Omega}/cm^2$ orders, and to make a conductible microstructure. From these results, it would be explained that the conduction path of $ZrB_2$particles built up within sintered glass matrix.

• Korean Journal of Environmental Agriculture
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• v.15 no.2
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• pp.179-187
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• 1996

This study was conducted to investigate the possibility of composting of household garbage. The composter with the double layer walls was operated for 60 days in each season. The following results were obtained at the end of the experiment, if the time was not specified. 1) The maximum temperature was $31^{\circ}C$ in spring, $36^{\circ}C$ in summer and $50^{\circ}C$ in winter. 2) The mass was reduced to an average of 58.5%. 3) pH values of the compost were 8.21 in spring, 8.29 in summer and 7.94 in winter. 4) The ash contents were 55.8% in spring, 57% in summer and 73.8% in winter. 5) The nitrogen contents were in the range of $0.2{\sim}5.8%$. Its values were the highest in winter and the lowest in summer. 6) Inorganic contents of the compost were in the range of : $P_2O_5$ ; $1.5{\sim}4.41%$, $K_2O$ ; $0.02{\sim}1.31%$, CaO $0.13{\sim}1.68%$ and MgO $0.05{\sim}1.22%$. 7) Heavy metal contents of the compost were in the range of : Zn ; $13{\sim}89mg/kg$, Cu ; $4{\sim}62mg/kg$, Cd ; $1{\sim}21mg/kg$, Pb ; $N.D.{\sim}97mg/kg$, Cr ; $N.D.{\sim}37$ and Hg ; $N.D.{\sim}1.38mg/kg$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• Resources Recycling
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• v.9 no.5
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• pp.16-21
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• 2000

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructue of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in $N_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in $NiFe_2$$O_4$ and $CoFe_2$$O_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to very their compositions or valencies at high temperatures. as the sintering proceeded, the number of large grains was increasing to from a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain is generated y the local activation of the stabilized rain boundaries, which is caused by the variation of composition or valencies during sintering. It is concluded that the essence of the abnormal gain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of he grain boundaries.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.206-206
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• 2013

산악자전거 서스펜션 포크 프레임의 소재 개발을 위해 Si, Mn, Mg, Cr, Zn 원소의 첨가량을 조정한 500MPa 인장강도를 가지는 압출성형과 용접성이 우수한 알루미늄 합금을 개발하였다. 개발한 고비강도 경량 알루미늄합금 위에 고경도, 고기능성과 같은 우수한 기계적 물성을 가진 TiN 박막을 Arc ion plating 공정으로 코팅하여 알루미늄합금의 내부식성, 내구성을 향상시켰다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.181-182
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• 2013

저온 공정을 통한 저가형의 태양전지를 만들기 위해 ALD 공정 법으로 Zinc oxide의 전도성을 조절하여 전기 증착법을 통해 성장시킨 Cuprous oxide와 p-n heterojunction을 구성하고 태양전지를 제작하였을 때 최적의 효율을 확인하였다. 전도성이 낮아질수록 전착법과의 p-n junction에서의 Jsc값이 증가하여 100도의 Zinc oxide의 경우 0.13%의 태양전지 효율을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.429.2-429.2
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• 2014

ZnO nanowire is known as synthesizable and good mechanical properties. And, stimuli-responsive polymer is widely used in the application of tunable sensing device. So, we combined these characteristics to make precise tunable sensing devise. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using nanosphere template with various conditions via hydrothermal process. Also, pH-temperature dependant tuning ability of nanostructure was studied. The brief experimental scheme is as follow. First, Zno seed layer was coated on a si wafer ($20{\times}20mm$) by spin coater. And then $1.15{\mu}m$ sized close-packed PS nanospheres were formed on a cleaned si substrate by using gas-liquid-solid interfacial self-assembly method. After that, zinc oxide nanowires were synthesized using hydrothermal method. Before the wire growth, to specify the growth site, heat treatment was performed. Finally, NIPAM(N-Isopropylacrylamide) was coated onto as-fabricated nanostructure and irradiated by UV light to form the PNIPAM network. The morphology, structures and optical properties are investigated by FE-SEM(Field Emission Scanning electron Microscopy), XRD(X-ray diffraction), OM(Optical microscopy), and WCA(water contact angle).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.2-391.2
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• 2014

Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices