• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.323-328
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• 2004

Down-conversion of Eu$^{3+}$ doped LiGdF$_4$ (LGF) for increasing the cell efficiency on dye-sensitized Ti $O_2$ solar cells has been studied. The dye sensitized solar cell (DSC) consisting of mesoporous Ti $O_2$ electrode deposited on transparent substrate, an electrolyte containing I$^{[-10]}$ /I$_3$$^{[-10]}$ redox couple, and Pt counter electrode is a promising alternative to the inorganic solar cell. The structure of DSC is basically a sandwich type, viz., FTO glass/Ru-red dye-absorbed Ti $O_2$/iodine electrolyte/sputtered Pt/FTO glass. The cell without down converter had open circuit potential of approximately 0.66 Volt, the short circuit photocurrent density of 1.632 mA/$\textrm{cm}^2$, and fill factor of about 50 ％ at the excitation wavelength of 550 nm. In addition, 5.6 mW/$\textrm{cm}^2$ incident light intensity beam was used as a light source. From this result, the calculated monochromatic efficiency at the wavelength of 550 nm of this cell was about 9.62 ％. The incident photon to current conversion efficiency (IPCE) of N3 used as a dye in this work is about 80 ％ at around 590 nm and 610 nm, which is the emission spectrum of Eu$^{3+}$ doped LGF, results in efficiency increasing of DSC.C.

• Journal of Life Science
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• v.12 no.1
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• pp.32-42
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• 2002

It was researched to react horse serum-BChE with hefanoylthiocholine chosen among choline esters. According as number of carbon of acyl group in choline esters was increased, reactivity was decreased but strength of ES complex was increased (Km=0,140mM). The pH-V/K profile for BChE-catalyzed hydrolysis of hexanoylthiocholine yields a p $K_{a}$ =4.974$\pm$0.028. This value is equal to recent literature that shows systematic shift from dependence of activity on the basic form fo a residue that huts a p $K_{a}$ =6.2~6.4 to catalysis by a residue or residues that has a p $K_{a}$ =4.7~5.0. The resulting kinetic solvent isotope effect of hexanoylthiocholine is $^{D/V}$K=1.18. The magnitude of the isotope effect suggests that proton transfer is not an element of transition-state stabilization.n.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.11
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• pp.140-149
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• 1996

Cursive characters are written on an economical principle to reduce the motion of a pen in the limit of distinction between characters. That is, the pen is not lifted up to move for writing a next stroke, the pen is not moved at all, or connected two strokes chance their shapes to a similar and simple shape which is easy to be written. For these reasons, strokes and korean alphabets are not only easy to be changed, but also difficult to be splitted. In this paper, we propose a curvature stroke modeling method for splitting and matching by using a structural primitive. A curvature stroke is defined as a substroke which does not change its curvanture. Input strokes handwritten in a cursive style are splitted into a sequence of curvature strokes by segmenting the points which change the direction of rotation, which occur a sudden change of direction, and which occur an excessive rotation Each reference of korean alphabets is handwritten in a printed style and is saved as a sequence of curvature strikes which is generated by splitting process. And merging process is used to generate various sequences of curvature strikes for matching. Here, it is also considered that imaginary strokes can be written or omitted. By using a curvature stroke as a unit of recognition, redundant splitting points in input characters are effectively reduced and exact matching is possible by generating a reference curvature stroke, which consists of the parts of adjacent two korean alphasbets, even when the connecting points between korean alphabets are not splitted. The results showed 83.6% as recognition rate of the first candidate and 0.99sec./character (CPU clock:66MHz) as processing time.

• Clean Technology
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• v.11 no.3
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• pp.123-128
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• 2005

Among various metal oxides semiconductors, $TiO_2$ is the most studied semiconductor for environmental clean-up applications due to its unique ability in photocatalyzing various organic contaminants, its chemical inertness, and nontoxicity. $TiO_2$, however, has a few drawbacks to be solved such as reactivity mainly working under ultraviolet irradiation (${\lambda}$ < 387 nm) and electron - hole recombination on $TiO_2$. In this study, to extend the absorption range of $TiO_2$ into the visible range and enhance electron - hole separation, we synthesized platinum (Pt) deposited $C-TiO_2$. The presence of Pt as an electron sink has been known to snhance the separation of photogenerated electron-hole pairs and induce the thermal decomposition. The characterization of as-synthesized $Pt-C-TiO_2$ was performed by Transmission Electron Microscopic (TEM), the Brunuer-Emmett-Teller (BET) method, X-ray Diffractometer (XRD), UV-vis spectrometer (UV-DRS), and X-ray Photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photodegradation experiment of an azo dye (Acid Red 44; $C_{10}H_7N=NC_{10}H_3(SO_3Na)_2OH$)was carried out by using an Xe arc lamp (300 W, Oriel). A 420 nm cut-off filter was used for visible light irradiation. From the results, Pt-deposited $C-TiO_2$ showed a far superior phothdegradation activity to Degussa P25, the commercial product under the irradiation of visible light and enhanced photocatalytic activity of visible-working $C-TiO_2$. This is a useful result into the application for the purification system of dye wastewater using visible energy of sun light.