• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.185-197
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• 1996

We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1451-1453
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• 2007

The electrical and the optical properties of organic light-emitting devices (OLEDs) with or without multiple heterostructures acting as a hole transport layer were investigated. The efficiency enhancement mechanism in the OLEDs with multiple heterostructures is described on the basis of the electrical and the optical results.

• Current Optics and Photonics
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• v.2 no.6
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• pp.589-594
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• 2018

We have investigated the dimensional nature of center-of-mass exciton confinement states in a CdMnTe/CdTe/CdMnTe heterostructure, where the CdTe well is too wide (144 nm) to confine both electrons and holes but able to confine whole excitons in the center-of-mass coordinate. Fine multiple photoluminescence spectra with a few meV separation were observed at 6 K. From the thickness dependence of the transition rate, they were attributed to even numbered center-of-mass exciton confinement states (N = 2, 4, 6, ${\cdots}$, 18). Dimensionality of the center-of-mass exciton confinement states was also investigated in terms of temperature dependence of radiative decay time. At low temperatures (${\leq}12K$), we found that the ground state excitons are likely localized possibly due to the barrier interface fluctuation, resulting in a constant decay time (~350 ps). With increased temperature (${\geq}12K$), localized excitons are thermally released, giving rise to a linear temperature dependence of radiative decay time as an evidence of two-dimensional nature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.111-116
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• 1998

Thirteen InGaAs/InGaAsP separate-confinement heterostructure multiple quantum well lasers were designed such that the strain in the active layer from 0.9% compressive strain to 1.4% tensile, and their threshold current density was caluculated to see the effects of strain on the threshold current density. The well width was adjusted such that the bandgap of the quantum well is 1.55 ${\mu}{\textrm}{m}$, For the calculation of the band structure and transition matrix element needed for the gain calculation, a block diagonalized 8$\times$8 second-order $\to{k}.\to{p}$ Hamiltonian was used to incorporate the conduction band nonparabolicity and the valence band mixing. The threshold current density shows discontinuity at 0.4% tensile strain where the first heavy-hole subband and the first light-hole subband cross and at 0.5% tensile strain where the second conduction subband begins to exist. The threshold current density at room temperature has a maximum around these 0.4-0.5% tensile strains, and as strain varies in either direction it decreases first and then increases a little after a local minimum. This calculated trend is consistent with the other reported experimental results. We discussed the results of this calculation in comparison with other theoretical or experimental papers on the effect of strain.